咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Improved Interface of Encapsul... 收藏

Improved Interface of Encapsulating Sm-Doped TiO<sub>2</sub> Thin Films/RuO<sub>2</sub> Schottky Diodes for a Junction Spectropy Measurement

Improved Interface of Encapsulating Sm-Doped TiO<sub>2</sub> Thin Films/RuO<sub>2</sub> Schottky Diodes for a Junction Spectropy Measurement

作     者:Mariko Murayama Yuri Tamamoto Yingda Qian Asuka Ishizawa Simon Hammersley Iain F. Crowe Shuji Komuro Shuji Komuro Xinwei Zhao Mariko Murayama;Yuri Tamamoto;Yingda Qian;Asuka Ishizawa;Simon Hammersley;Iain F. Crowe;Shuji Komuro;Shuji Komuro;Xinwei Zhao

作者机构:Department of Physics Tokyo University of Science Tokyo Japan Research Institute of Industrial Technology Toyo University Saitama Japan Photon Science Institute and School of Electrical and Electronic Engineering University of Manchester Manchester UK 

出 版 物:《Optics and Photonics Journal》 (光学与光子学期刊(英文))

年 卷 期:2022年第12卷第10期

页      面:215-224页

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

主  题:Rare Earth TiO2 Photoluminescence Junction Spectroscopy 

摘      要:The excitation process of rare-earth ions in oxide semiconductors for optical emission is thought to be related to defect levels within the band-gap of the host material. In order to improve understanding of the role defect levels play in the energy transfer process, junction spectroscopy techniques can be used to investigate the electrically active emission centres. It has been reported that TiO2 is sensitive to humidity at low temperatures, such as those employed when conducting junction spectroscopy measurements. However, there are not many discussions how to prevent this effect and to improve the quality of measurements. After optimization of samples such as fabrication of flat surface and encupsulant for preventing external effect, temperature dependent-capacitance measurements (C-T) were carried out to characterise shallow traps formed within TiO2 band-gap. TiO2 and Sm-doped TiO2 thin films were deposited on SrTiO3 (100) templates by laser ablaton and rectifying Ruthenium Oxide Schottky diodes deposited on the TiO2 surface by laser ablation. A Sm or Sm-related shallow trap was observed in the Arrhenius plot of TiO2:Sm. In this paper, we show the optimized sample fabrication/preparation process that stabilizes the junction spectroscopy measurements, even in the presence of humidity and we present initial results obtained on samples using these optimized processing techniques.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分