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The inhibition mechanisms of pancreatic lipase by apigenin and its anti-obesity mechanisms revealed by using network pharmacology

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Food Bioscience 2022年第1期45卷 293-300页

作者： Fuqiang Liang yumeng shi Weiwei Cao Jiayi shi College of Food Science and Engineering Collaborative Innovation Center for Modern Grain Circulation and SafetyNanjing University of Finance and EconomicsNanjing210023China College of Food Science and Bioengineering Henan University of Science and TechnologyLuoyang471023China

This study aimed to elucidate the inhibition mechanism of apigenin against porcine pancreatic lipase(PPL),and,moreover,to comprehensively reveal the molecular basis of its anti-obesity via network pharmacology *** results showed that apigenin inhibited PPL with an IC50 value of 0.377±0.041 *** techniques combined molecular docking suggested that apigenin could bind into the PPL active pocket,affecting its normal spatial ***,molecular dynamic(MD)simulations revealed that the open conformation of PPL tended to transit to the closed in the presence of apigenin,which might one important reason for the inhibition of PPL catalytic *** pharmacology analysis revealed that a total of 49 proteins could be identified as potential targets for the anti-obesity effects of *** to the protein-protein interaction(PPI)network analysis,six hub targets were extracted including IGF1,ESR1,MMP9,PPARA,MAPK14 and *** Encyclopedia of Genes and Genomes(KEGG)pathway enrichment indicated that the 49 potential targets could be mapped to 30 pathways(p<0.05).Among them,PI3K-Akt signaling pathway and insulin resistance can be considered as two major pathways regulated by *** docking studies indicated that apigenin can bind into the binding pocket of the six hub target proteins identified according to the PPI *** results indicated that in addition to inhibiting PPL,apigenin could exhibit anti-obesity benefit through the molecular mechanisms uncovered by network *** study proposes a new strategy to reveal the mechanisms of dietary polyphenols at the level of network pharmacology.

关键词： Anti-Obesity Apigenin Pancreatic lipase Inhibition mechanism Molecular modeling Network pharmacology

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Photothermal properties of Cu@polycarbonate composites with strong localized surface plasmon resonances

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Nano Research 2024年第9期17卷 8513-8520页

作者： Fengyi Wang Jiangling He Junshan Hu Zhihui Chen yumeng shi Qing-Hua Xu SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China Department of Chemistry National University of Singapore3 Science Drive 3Singapore 117543Singapore College of Materials Science and Engineering Sichuan UniversityChengdu 610065China

Copper is relatively low cost and highly abundant compared with the well-studied noble metals such as gold and ***,the poor plasmonic and high susceptibility towards oxidation limit the study of its optical properties and applications as ***,copper nanoparticles@polycarbonate(Cu@PC)composites were prepared by using a facile one-step solvothermal *** Cu@PC composites have strong localized surface plasmon resonances(LSPR)due to that the PC shell can induce the particles to form many-particles system with different particle numbers,which not only lead to overlap and hybridize of the LSPR modes,but also shift the LSPR away from the interband transitions,and the PC layer also prevents the oxidation of Cu *** photothermal conversion efficiency of Cu@PC composites reaches 41.1%under 808 nm continuous wave(CW)laser irradiation which is higher than previously reported Cu nanomaterials that have been ***,the composites also have high photothermal ***,interfacial evaporator is prepared by assembling the Cu@PC composites on scouring sponge as light absorption layer which has>92.8%absorption in entire solar spectrum *** seawater evaporation rate is 3.177 kg·m^(-2)·h^(-1)with a E_(evaporator)/E_(water)of *** high evaporation rate interfacial evaporator with low cost,simple,and scalable approach shows great application value in the field of photothermal evaporation.

关键词： Cu nanoparticles localized surface plasmon resonances(LSPR) photothermal interfacial evaporation

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Efficiently band-tailored type-Ⅲ van der Waals heterostructure for tunnel diodes and optoelectronic devices

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Nano Research 2022年第9期15卷 8442-8450页

作者： Xiangna Cong Yue Zheng Fu Huang Qi You Jian Tang Feier Fang Ke Jiang Cheng Han yumeng shi International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics&Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China

Broken-gap(type-Ⅲ)two-dimensional(2D)van der Waals heterostructures(vdWHs)offer an ideal platform for interband tunneling devices due to their broken-gap band offset and sharp band ***,we demonstrate an efficient control of energy band alignment in a typical type-ⅢvdWH,which is composed of vertically-stacked molybdenum telluride(MoTe2)and tin diselenide(SnSe2),via both electrostatic and optical *** a single electrostatic gating with hexagonal boron nitride(hBN)as the dielectric,a variety of electrical transport characteristics including forward rectifying,Zener tunneling,and backward rectifying are realized on the same heterojunction at low gate voltages of±1 *** particular,the heterostructure can function as an Esaki tunnel diode with a room-temperature negative differential *** great tunability originates from the atomicallyflat and inert surface of h-BN that significantly suppresses the interfacial trap scattering and strain *** the illumination of an 885 nm laser,the band alignment of heterojunction can be further tuned to facilitate the direct tunneling of photogenerated charge carriers,which leads to a high photocurrent on/off ratio of>105 and a competitive photodetectivity of 1.03×1012 Jones at zero ***,the open-circuit voltage of irradiated heterojunction can be switched from positive to negative at opposite gate voltages,revealing a transition from accumulation mode to depletion *** findings not only promise a simple strategy to tailor the bands of type-ⅢvdWHs but also provide an in-depth understanding of interlayer tunneling for future low-power electronic and optoelectronic applications.

关键词： broken-gap(type-Ⅲ)heterostructure band tailoring single electrostatic gating infrared photodetector photovoltaic effects

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Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

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Nano Research 2024年第4期17卷 3014-3020页

作者： Yue Zheng Qi You Zhentian Yin Jian Tang Ke Jiang Zihao Xie Henan Li Cheng Han yumeng shi International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China College of Electronics and Information Engineering Shenzhen UniversityShenzhen 518060China

The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical *** them,orthorhombic tin-selenide(SnSe)has garnered increasing attention due to its potential applications in a variety of electronic,optoelectronic,and thermoelectric ***,the realization of high-performance SnSe FETs with low contact resistance(Rc)remains a ***,we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different *** is found that chromium(Cr)-contacted devices possess the best FET performance,such as electron mobility up to 606 cm^(2)/(V·s)at 78 K,current on/off ratio exceeding 1010,and saturation current of~550μA/μm,where a negligible Schottky barrier(SB)of~30 meV and a low contact resistance of~425Ωμm are achieved.X-ray photoelectron spectroscopy(XPS)and cross-sectional electron dispersive X-ray spectroscopy(EDX)results further reveal that the improved contact arises from the Cr-induced reduction of native oxide(SnOx)to Sn,which thins the tunneling barrier for efficient electron *** findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.

关键词： few-layer SnSe field-effect transistors(FETs) Cr contact native oxide contact resistance(Rc) Schottky barrier(SB)

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Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter

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Nano Research 2022年第5期15卷 4677-4681页

作者： Zuxin Chen Quan Chen Zebing Chai Bin Wei Jun Wang Yanping Liu yumeng shi Zhongchang Wang Jingbo Li Institute of semiconductors South China Normal UniversityGuangzhou 510631China School of Materials Sun Yat-Sen UniversityGuangzhou 510275China School of Electrical Engineering and Automation Wuhan UniversityWuhan 430000China School of Physics and Electronics Hunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangsha 410083China Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China International Iberian Nanotechnology Laboratory(INL) 4715–330 BragaPortugal

Growth of high-quality large-sized crystals using the traditional chemical vapor transport(CVT)or vertical Bridgman(VB)technique is costly and time-consuming,limiting its practical industrial ***,we propose an ultrafast crystal growth process with low energy consumption and capability of producing crystals of excellent quality,and demonstrate that large-sized GaSe crystals with a lateral size of 0.5 to 1 cm can be obtained within a short period of 5 min.X-ray diffraction(XRD)and scanning transmission electron microscopy(STEM)studies clearly indicate that the as-grown crystals have a good *** further show the potential application of the resulting GaSe crystals,we fabricate the few-layer GaSe-based photodetector,which exhibits low dark current of 21 pA and fast response of 34 ms under 405 nm *** proposed technique for rapid crystal growth could be further extended to other metallenes with low-melting point,such as Bi-,Sn-,In-,Pb-based crystals,opening up a new avenue in fulfilling diverse potential optoelectronics applications of two-dimensional(2D)crystals.

关键词： GaSe ultrafast growth photodetector liquid metal

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Rechargeable Aqueous Zinc-Ion Batteries in MgSO4/ZnSO4 Hybrid Electrolytes

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Nano-Micro Letters 2020年第5期12卷 33-48页

作者： Yingmeng Zhang Henan Li Shaozhuan Huang Shuang Fan Lingna Sun Bingbing Tian Fuming Chen Ye Wang yumeng shi Hui Ying Yang College of Chemistry and Environmental Engineering Shenzhen UniversityShenzhen 518060GuangdongPeople’s Republic of China International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060People’s Republic of China Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province ShenzhenPeople’s Republic of China Institute of Microscale Optoelectronics Shenzhen UniversityShenzhen 518060People’s Republic of China Pillar of Engineering Product Development Singapore University of Technology and Design8 Somapah RoadSingapore 487372Singapore School of Physics and Telecommunication Engineering South China Normal UniversityGuangzhou 510006People’s Republic of China Key Laboratory of Material Physics of Ministry of Education School of Physics and EngineeringZhengzhou UniversityZhengzhou 450052People’s Republic of China

MgSO4 is chosen as an additive to address the capacity fading issue in the rechargeable zinc-ion battery system of MgxV2O5·nH2O//ZnSO4//*** with different concentration ratios of ZnSO4 and MgSO4 are *** batteries measured in the 1 M ZnSO4^-1 M MgSO4 electrolyte outplay other competitors,which deliver a high specific capacity of 374 mAh g^-1 at a current density of 100 mA g^-1 and exhibit a competitive rate performance with the reversible capacity of 175 mAh g^-1 at 5 A g^-*** study provides a promising route to improve the performance of vanadium-based cathodes for aqueous zinc-ion batteries with electrolyte optimization in cost-effective electrolytes.

关键词： Aqueous zinc-ion batteries Hybrid electrolytes Electrolyte additives Magnesium ions Vanadates

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Interlayer exciton dynamics of transition metal dichalcogenide heterostructures under electric fields

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Nano Research 2024年第5期17卷 4555-4572页

作者： Jian Tang Yue Zheng Ke Jiang Qi You Zhentian Yin Zihao Xie Henan Li Cheng Han Xiaoxian Zhang yumeng shi International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China College of Electronics and Information Engineering Shenzhen UniversityShenzhen 518060China Key Laboratory of Luminescence and Optical Information Ministry of EducationInstitute of Optoelectronic TechnologyBeijing Jiaotong UniversityBeijing 100044China

Stacking single layers of atoms on top of each other provides a fundamental way to achieve novel material systems and engineer their physical properties,which offers opportunities for exploring fundamental physics and realizing next-generation optoelectronic *** the two-dimensional(2D)-stacked systems,transition metal dichalcogenide(TMDC)heterostructures are particularly attractive because they host tightly-bonded interlayer excitons which possess various novel and appealing *** interlayer excitons have drawn significant research attention and hold high potential for the application in unique optoelectronic devices,such as polarization-and wavelength-tunable single photon emitters,valley Hall transistors,and possible high-temperature *** development of these devices requires a comprehensive understanding of the fundamental properties of these interlayer excitons and the impact of electric fields on their *** this review,we summarize the recent advances on the understanding of interlayer exciton dynamics under electric fields in TMDC *** put emphasis on the electrical modulation of interlayer excitons’emission,the valley Hall transport of charge carriers after the separation of interlayer excitons by an electric field,and the correlation physics of interlayer excitons and charges under electrical doping and *** and perspectives are finally discussed for the application of TMDC heterostructures in future optoelectronics.

关键词： interlayer exciton transition metal dichalcogenide(TMDC)heterostructures circular polarization valley Hall effect strong coupling

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Emission mechanism in the terbium complex doped PVK system

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Frontiers of Optoelectronics 2008年第Z1期1卷 130-133页

作者： Xiufang LI Zhenbo DENG Yuanyuan ZHANG yumeng shi Ruifen WANG Institute of Optoelectronic Technology Key Laboratory of Luminescence and Optical Information Technology Ministry of Education Beijing Jiaotong University Chemistry College Hebei Normal University

A new kind of rare earth（RE） complex Tb（oMBA）3phen was synthesized and used as an emitting material in *** material was doped into poly（N-vinylcarbazole）(PVK) as the emitting layer,which was made by spin *** kinds of devices were fabricated with the structures:（A） ITO/PVK:Tb（oMBA）3phen/LiF/Al;（B） ITO/PVK:Tb（o-MBA）3phen/BCP/AlQ3/LiF/Al;（C） ITO/BCP/PVK:Tb（oMBA）3phen/AlQ3/LiF/*** green emission could be obtained from device（A） and（C）.The photoluminescence（PL） and electroluminescence（EL） mechanisms of this material had been *** there was an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex,there should be a Forster energy transfer process between *** excitation spectrum of PVK doped Tb（o-MBA）3phen system is similar with the excitation spectrum of PVK,yet it is different from that of Tb（o-MBA）***,the emission of Tb（o-MBA）3phen should partly come from the excitation of PVK while in the organic light-emitting diode（OLED）,based on Tb（o-MBA）3phen,the emission mainly comes from the direct recombination of electron and *** green emission can be obtained from the optimized multi-layer device（C） and the highest EL brightness reached 180 cd/m2at the voltage of 17 V.

关键词： terbium complex organic light-emitting diode (OLED) exciton

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Association between estimated glomerular filtration rate and bleeding in elderly hypertensive patients complicated with non-valvular atrial fibrillation under dabigatran treatment

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China Medical Abstracts(Internal Medicine) 2021年第1期38卷 31-32页

作者： shi yumeng Dept Cardiol Dis Prev Center 2nd Affil HospNanchang UnivNanchang 330006

Objective To investigate the relationship between estimated glomerular filtration rate (eGFR) and hemorrhage in elderly hypertensive patients complicated with non-valvular atrial fibrillation under dabigatran *** This... 详细信息

关键词： hypertensive patients fibrillation

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Visible-light stimulated synaptic plasticity in amorphous indium−gallium−zinc oxide enabled by monocrystalline double perovskite for high-performance neuromorphic applications

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Nano Research 2023年第1期16卷 1304-1312页

作者： Fu Huang Feier Fang Yue Zheng Qi You Henan Li Shaofan Fang Xiangna Cong Ke Jiang Ye Wang Cheng Han Wei Chen yumeng shi International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China College of Electronics and Information Engineering Shenzhen UniversityShenzhen 518060China Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Department of Physics National University of SingaporeSingapore 117542Singapore Department of Chemistry National University of SingaporeSingapore 117543Singapore Joint School of National University of Singapore and Tianjin University International Campus of Tianjin UniversityBinhai New CityFuzhou 350207China

Photoelectric synaptic devices have been considered as one of the key components in artificial neuromorphic systems due to their excellent capability to emulate the functions of visual neurons,such as light perception and image ***,we demonstrate an optically-stimulated artificial synapse with a clear photoresponse from ultraviolet to visible light,which is established on a novel heterostructure consisting of monocrystalline Cs2AgBiBr6 perovskite and indium–gallium–zinc oxide(IGZO)thin *** compared with pure IGZO,the heterostructure significantly enhances the photoresponse and corresponding synaptic plasticity of the devices,which originate from the superior visible absorption of single-crystal Cs2AgBiBr6 and effective interfacial charge transfer from Cs2AgBiBr6 to IGZO.A variety of synaptic behaviors are realized on the fabricated thin-film transistors,including excitatory postsynaptic current,paired pulse facilitation,short-term,and long-term ***,an artificial neural network is simulated based on the photonic potentiation and electrical depression effects of synaptic devices,and an accuracy rate up to 83.8%±1.2%for pattern recognition is *** finding promises a simple and efficient way to construct photoelectric synaptic devices with tunable spectrum for future neuromorphic applications.

关键词： artificial optoelectronic synapse monocrystalline Cs2AgBiBr6 thin-film transistors ultraviolet-to-visible neuromorphic computing

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