Ultrafast growth of high-quality large-sized GaSe crystals by liquid metal promoter

作     者：Zuxin Chen Quan Chen Zebing Chai Bin Wei Jun Wang Yanping Liu Yumeng Shi Zhongchang Wang Jingbo Li Zuxin Chen;Quan Chen;Zebing Chai;Bin Wei;Jun Wang;Yanping Liu;Yumeng Shi;Zhongchang Wang;Jingbo Li

作者机构：Institute of semiconductorsSouth China Normal UniversityGuangzhou 510631China School of MaterialsSun Yat-Sen UniversityGuangzhou 510275China School of Electrical Engineering and AutomationWuhan UniversityWuhan 430000China School of Physics and ElectronicsHunan Key Laboratory for Super-microstructure and Ultrafast ProcessCentral South University932 South Lushan RoadChangsha 410083China Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong ProvinceInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsShenzhen UniversityShenzhen 518060China International Iberian Nanotechnology Laboratory(INL)4715–330 BragaPortugal 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第5期

页      面：4677-4681页

核心收录：

学科分类：081705[工学-工业催化] 08[工学] 0817[工学-化学工程与技术] 

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.62104073,51402219,11904412,and 6210031084) the Postdoctoral Science Foundation(No.2021M691088) Y.S.acknowledges the support from the National Natural Science Foundation of China(Nos.51602200 and 61874074) the(Key)Project of Department of Education of Guangdong Province(No.2016KZDXM008) This project was supported by Shenzhen Peacock Plan(No.KQTD2016053112042971) 

主　　题：GaSe ultrafast growth photodetector liquid metal 

摘      要：Growth of high-quality large-sized crystals using the traditional chemical vapor transport(CVT)or vertical Bridgman(VB)technique is costly and time-consuming,limiting its practical industrial ***,we propose an ultrafast crystal growth process with low energy consumption and capability of producing crystals of excellent quality,and demonstrate that large-sized GaSe crystals with a lateral size of 0.5 to 1 cm can be obtained within a short period of 5 min.X-ray diffraction(XRD)and scanning transmission electron microscopy(STEM)studies clearly indicate that the as-grown crystals have a good *** further show the potential application of the resulting GaSe crystals,we fabricate the few-layer GaSe-based photodetector,which exhibits low dark current of 21 pA and fast response of 34 ms under 405 nm *** proposed technique for rapid crystal growth could be further extended to other metallenes with low-melting point,such as Bi-,Sn-,In-,Pb-based crystals,opening up a new avenue in fulfilling diverse potential optoelectronics applications of two-dimensional(2D)crystals.