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Second harmonic generation in a hollow-core fiber filled with GaSe nanosheets

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Science China(Information Sciences) 2022年第6期65卷 234-240页

作者： Zhen HAO Yuxin MA Biqiang JIANG Yueguo HOU Ailun LI Ruixuan YI xuetao gan Jianlin ZHAO MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University

Frequency conversions using various all-fiber nonlinear devices can benefit many applications, including communications, sensing, microscope, and imaging. In this study, we report in-fiber second harmonic generation(SHG) in an optical hollow-core fiber(HCF) that can be used for frequency conversion. The HCF filled with a dispersion of gallium selenide(GaS e) nanosheets in the ultraviolet-cured optical adhesive supports a well-propagating mode in the fiber core, which enables effective light interaction with dispersed GaS e nanosheets and a strong SHG process. Based on theoretical analysis, the optimal HCF length for maximizing SHG is approximately 0.41 mm. The broadband SHG of the GaS e-filled HCF device is demonstrated by tuning the pump wavelength from 1460 to 1600 nm. Moreover, a time-varied SHG in the device is revealed due to additional second-order susceptibility induced by the polarization of silica. The proposed device with a compact and robust structure has the potential to be connected to existing all-fiber telecom and sensing systems for numerous nonlinear engineering applications.

关键词： second-harmonic generation gallium selenide hollow-core fiber broadband operation wavelength time-varied second harmonic generation

High-efficiency second-order nonlinear processes in an optical microfibre assisted by few-layer GaSe

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Light(Science & Applications) 2020年第1期9卷 1410-1417页

作者： Biqiang Jiang Zhen Hao Yafei Ji Yueguo Hou Ruixuan Yi Dong Mao xuetao gan Jianlin Zhao MOE Key Laboratory of Material Physics and Chemistry Under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

The centrosymmetric nature of silica fibre precludes the realisation of second-order nonlinear processes in optical fibre ***,the integration of 2D materials with optical fibres has opened up a great opportunity to develop allfibre active ***,we demonstrate high-efficiency second-order nonlinear frequency conversions in an optical microfibre assisted with few-layer gallium selenide(GaSe)*** to the strong evanescent field of the microfibre and ultrahigh second-order nonlinearity of the GaSe nanoflakes,second harmonic generation(SHG)and sum-frequency generation(SFG)are effectively achieved with only sub-milliwatt continuous-wave(CW)lasers in the wavelength range of 1500–1620 nm,covering the C and L telecom *** SHG intensity from the microfibre is enhanced by more than four orders of magnitude with the assistance of the GaSe nanoflakes on fibre nonlinear ***,in the SFG process,the intensity transfer between different frequencies can be effectively manipulated by changing the wavelengths and powers of two pump *** realised strong second-order nonlinearity in the GaSe-integrated microfibre might expand the applications of all-fibre devices in all-optical signal processing and new light source generation at awkward wavelengths.

关键词： fibre pump nonlinear

High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces

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Opto-Electronic Advances 2021年第6期4卷 1-10页

作者： Cizhe Fang Qiyu Yang Qingchen Yuan xuetao gan Jianlin Zhao Yao Shao Yan Liu Genquan Han Yue Hao State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian UniversityXi’an 710071China MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Shanghai Energy Internet Research Institute of State Grid 251 Libing RoadPudong New AreaShanghai 201210China

The realization of high-Q resonances in a silicon metasurface with various broken-symmetry blocks is reported. Theoretical analysis reveals that the sharp resonances in the metasurfaces originate from symmetry-protected bound in the continuum(BIC) and the magnetic dipole dominates these peculiar states. A smaller size of the defect in the broken-symmetry block gives rise to the resonance with a larger Q factor. Importantly, this relationship can be tuned by changing the structural parameter, resulting from the modulation of the topological configuration of BICs. Consequently, a Q factor of more than 3,000 can be easily achieved by optimizing dimensions of the nanostructure. At this sharp resonance, the intensity of the third harmonic generation signal in the patterned structure can be 368 times larger than that of the flat silicon film. The proposed strategy and underlying theory can open up new avenues to realize ultrasharp resonances, which may promote the development of the potential meta-devices for nonlinearity, lasing action, and sensing.

关键词： all-dielectric metasurface bound states in the continuum optical nonlinearity topological configuration

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

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Light(Science & Applications) 2022年第5期11卷 901-910页

作者： Ruijuan Tian xuetao gan Chen Li Xiaoqing Chen Siqi Hu Linpeng Gu Dries Van Thourhout Andres Castellanos-Gomez Zhipei Sun Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University710129 Xi’anChina Photonics Research Group and Center for Nano and Biophotonics Ghent UniversityB-9000 GentBelgium Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)E-28049 MadridSpain Department of Electronics and Nanoengineering and QTF Centre of Excellence Aalto UniversityFI-02150 EspooFinland

Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free ***,the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metalsemiconductor-metal,suffering from high dark currents and low responsivities at high operation ***,we report a van der Waals PN heterojunction photodetector,composed of p-type black phosphorous and n-type molybdenum telluride,integrated on a silicon nitride *** built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the *** a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous,the dark current is lower than 7 nA,which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus *** intrinsic responsivity up to 577 mA W^(−1) is ***,the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection,enabling an increased responsivity of 709 mA W^(−1).Besides,the heterojunction photodetector exhibits a response bandwidth of~1.0 GHz and a uniform photodetection over a wide spectral range,as experimentally measured from 1500 to 1630 *** demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current,high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon,lithium niobate,polymer,etc.

关键词： heterojunction responsivity waveguide

Solvent-free fabrication of broadband WS2 photodetectors on paper

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Opto-Electronic Advances 2023年第3期6卷 1-11页

作者： Wenliang Zhang Onur Çakıroğlu Abdullah Al-Enizi Ayman Nafady xuetao gan Xiaohua Ma Sruthi Kuriakose Yong Xie Andres Castellanos-Gomez Materials Science Factory Instituto de Ciencia de Materiales de Madrid(ICMM-CSIC)Madrid E-28049Spain Department of Chemistry College of ScienceKing Saud UniversityRiyadh 11451Saudi Arabia Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710071China

Paper-based devices have attracted extensive attention due to the growing demand for disposable flexible ***,we integrate semiconducting devices on cellulose paper substrate through a simple abrasion technique that yields high-performance photodetectors.A solvent-free WS_(2) film deposited on paper favors an effective electron-hole separation and hampers *** as-prepared paper-based WS2 photodetectors exhibit a sensitive photoresponse over a wide spectral range spanning from ultraviolet(365 nm)to near-infrared(940 nm).Their responsivity value reaches up to~270 mA W^(−1) at 35 V under a power density of 35 mW cm^(−2).A high performance photodetector was achieved by controlling the environmental exposure as the ambient oxygen molecules were found to decrease the photoresponse and stability of the WS_(2) ***,we have built a spectrometer using such a paperbased WS_(2) device as the photodetecting component to illustrate its potential *** present work could promote the development of cost-effective disposable photodetection devices.

关键词： paper electronics photodetector van der Waals materials solvent-free deposition tungsten disulfide

In-fiber photoelectric device based on graphene-coated tilted fiber grating

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Opto-Electronic Science 2023年第6期2卷 22-31页

作者： Biqiang Jiang Yueguo Hou Jiexing Wu Yuxin Ma xuetao gan Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Basic Discipline(Liquid Physics)Research CenterSchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

Graphene and related two-dimensional materials have attracted great research interests due to prominently optical and electrical properties and flexibility in integration with versatile photonic ***,we report an in-fiber photoelec-tric device by wrapping a few-layer graphene and bonding a pair of electrodes onto a tilted fiber Bragg grating(TFBG)for photoelectric and electric-induced thermo-optic *** transmitted spectrum from this device consists of a dense comb of narrowband resonances that provides an observable window to sense the photocurrent and the electrical injection in the graphene *** device has a wavelength-sensitive photoresponse with responsivity up to 11.4 A/W,allowing the spectrum analysis by real-time monitoring of photocurrent *** on the thermal-optic effect of electrical injection,the graphene layer is energized to produce a global red-shift of the transmission spectrum of the TF-BG,with a high sensitivity approaching 2.167×10^(4)nm/A^(2).The in-fiber photoelectric device,therefore as a powerful tool,could be widely available as off-the-shelf product for photodetection,spectrometer and current sensor.

关键词： tilted fiber grating photoelectric device graphene photoelectric conversion thermo-optic switching

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

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Science China(Information Sciences) 2024年第6期67卷 198-206页

作者： Qiyu YANG Zheng-Dong LUO Fei XIAO Junpeng ZHANG Dawei ZHANG Dongxin TAN xuetao gan Yan LIU Zhufei CHU Yinshui XIA Genquan HAN Hangzhou Institute of Technology Xidian University State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University School of Artificial Intelligence Xidian University School of Materials Science and Engineering University of New South Wales (UNSW) Sydney ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET) University of New South Wales (UNSW) Sydney Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University Faculty of Electrical Engineering and Computer Science Ningbo University

Driven by the explosive development of data-centric computation applications, it is becoming urgent to develop in-memory computing devices that are beyond the von Neumann architecture with an arrangement of separated logic and memory components. The transistor-type solid-state non-volatile memories,such as ferroelectric field-effect transistors(Fe FETs), have long been regarded as a competitive candidate for future in-memory computing architectures. However, the density scaling towards high-density arrays would require advanced Fe FETs with reduced footprints, which remains a great challenge so far. Here, a vertical-transport(VT) Fe FET that flips the charge transport channel perpendicular to the substrate plane is proposed, in which a ferroelectric gate and a van der Waals(vd W) heterojunction channel are vertically integrated, effectively reducing the device footprints. The proposed VT-Fe FET shows not only the robust binary non-volatile memory states but also several key synaptic functionalities at the device level. An artificial neural network with supervised learning was simulated based on the device conductance switching properties,showing excellent classification accuracy for the MNIST handwritten digits. These findings suggest that the proposed VT-Fe FET could offer a new solution for future non-volatile memories as well as more advanced neuromorphic systems.

关键词： vdW heterostructure non-volatile memory vertical-transport transistor ferroelectric field-effect transistor memristive devices

Graphene-supported manipulation of surface plasmon polaritons in metallic nanowaveguides

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Photonics Research 2017年第3期5卷 162-167页

作者： HUA LU xuetao gan DONG MAO JIANLIN ZHAO MOE Key Laboratory of Space Applied Physics and Chemistry and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical University

We investigate the electrically controlled light propagation in the metal–dielectric–metal plasmonic waveguide with a sandwiched graphene monolayer. The theoretical and simulation results show that the propagation loss exhibits an obvious peak when the permittivity of graphene approaches an epsilon-near-zero point when adjusting the gate voltage on graphene. The analog of electromagnetically induced transparency(EIT) can be generated by introducing side-coupled stubs into the waveguide. Based on the EIT-like effect, the hybrid plasmonic waveguide with a length of only 1.5 μm can work as a modulator with an extinction ratio of ～15.8 d B, which is 2.3times larger than the case without the stubs. The active modulation of surface plasmon polariton propagation can be further improved by tuning the carrier mobility of graphene. The graphene-supported plasmonic waveguide system could find applications for the nanoscale manipulation of light and chip-integrated modulation.

关键词： of on in Graphene-supported manipulation of surface plasmon polaritons in metallic nanowaveguides EIT for

Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

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Chinese Physics B 2018年第12期27卷 71-76页

作者： Siqi Hu Ruijuan Tian Xiaoguang Luo Rui Yin Yingchun Cheng Jianlin Zhao Xiaomu Wang xuetao gan MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical Univeristy Shannxi Institute of Flexible Electronics Northwestern Polytechnical University School of Electronic Science and Engineering Nanjing University

We demonstrate a reconfigurable black phosphorus electrical field transistor,which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride *** homojunctions could be realized by controlling both source–drain and top-gate *** the spatially resolved scanning photocurrent microscopy technique,photovoltaic photocurrents originated from the band-bending regions are observed,confirming nine different configurations for each set of fixed *** addition,as a phototransistor,high responsivity(～800 mA/W)and fast response speed(～230μs)are obtained from the *** reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.

关键词： black phosphorus reconfigurable heterostructure photovoltaic effect photocurrent