Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors

作     者：Siqi Hu Ruijuan Tian Xiaoguang Luo Rui Yin Yingchun Cheng Jianlin Zhao Xiaomu Wang Xuetao Gan 胡思奇;田睿娟;罗小光;殷瑞;程迎春;赵建林;王肖沐;甘雪涛

作者机构：MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions and Shaanxi Key Laboratory of Optical Information TechnologySchool of ScienceNorthwestern Polytechnical Univeristy Shannxi Institute of Flexible Electronics Northwestern Polytechnical University School of Electronic Science and Engineering Nanjing University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2018年第27卷第12期

页      面：71-76页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFA0307200 and 2017YFA0303800) the National Natural Science Foundations of China(Grant Nos.61522507 and 61775183) the Key Research and Development Program in Shaanxi Province of China(Grant No.2017KJXX-12) the Fundamental Research Funds for the Central Universities(Grant Nos.3102017jc01001 and 3102018jcc034) 

主　　题：black phosphorus reconfigurable heterostructure photovoltaic effect photocurrent 

摘      要：We demonstrate a reconfigurable black phosphorus electrical field transistor,which is van der Waals heterostructured with few-layer graphene and hexagonal boron nitride *** homojunctions could be realized by controlling both source–drain and top-gate *** the spatially resolved scanning photocurrent microscopy technique,photovoltaic photocurrents originated from the band-bending regions are observed,confirming nine different configurations for each set of fixed *** addition,as a phototransistor,high responsivity(～800 mA/W)and fast response speed(～230μs)are obtained from the *** reconfigurable van der Waals heterostructured transistors may offer a promising structure towards electrically tunable black phosphorus-based optoelectronic devices.