Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity
作者机构：Key Laboratory of Light Field Manipulation and Information AcquisitionMinistry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical University710129 Xi’anChina Photonics Research Group and Center for Nano and BiophotonicsGhent UniversityB-9000 GentBelgium Materials Science FactoryInstituto de Ciencia de Materiales de Madrid(ICMM-CSIC)E-28049 MadridSpain Department of Electronics and Nanoengineering and QTF Centre of ExcellenceAalto UniversityFI-02150 EspooFinland
出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)
年 卷 期：2022年第11卷第5期
页 面：901-910页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：supported by the National Key R&D Program of China(Grant Nos.2018YFA0307200 and 2017YFA0303800) the National Natural Science Foundation of China(Grant Nos.61905198,61775183,11634010,and 61675171) Key Research and Development Program in Shaanxi Province of China(Grant Nos.2017KJXX-12,2018JM1058,and 2018KW-009) the Fundamental Research Funds for the Central Universities(Grant Nos.3102017jc01001,3102018jcc034,and 3102017HQZZ022)
主 题：heterojunction responsivity waveguide
摘 要：Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free ***,the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metalsemiconductor-metal,suffering from high dark currents and low responsivities at high operation ***,we report a van der Waals PN heterojunction photodetector,composed of p-type black phosphorous and n-type molybdenum telluride,integrated on a silicon nitride *** built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the *** a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous,the dark current is lower than 7 nA,which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus *** intrinsic responsivity up to 577 mA W^(−1) is ***,the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection,enabling an increased responsivity of 709 mA W^(−1).Besides,the heterojunction photodetector exhibits a response bandwidth of~1.0 GHz and a uniform photodetection over a wide spectral range,as experimentally measured from 1500 to 1630 *** demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current,high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon,lithium niobate,polymer,etc.
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