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Chip 2024年第1期3卷 35-42页

作者： Ru Xu Peng Chen Xiancheng Liu Jianguo Zhao Tinggang Zhu Dunjun Chen zili xie Jiandong Ye Xiangqian Xiu Fayu Wan Jianhua Chang Rong Zhang Youdou Zheng The Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210023China School of Electronic and Information Engineering Nanjing University of Information Science and TechnologyNanjing 210044China Corenergy Semiconductor Incorporation Suzhou 215600China

GaN power electronic devices,such as the lateral AlGaN/GaN Schottky barrier diode(SBD),have received significant attention in recent *** studies have focused on optimizing the breakdown voltage(BV)of the device,with a particular emphasis on achieving ultra-high-voltage(UHV,>10 kV)***,another important question arises:can the device maintain a BV of 10 kV while having a low turn-on voltage(V_(on))?In this study,the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 ***,by utilizing a doublebarrier anode(DBA)structure consisting of platinum(Pt)and tantalum(Ta),a remarkably low Von of 0.36 V was *** achievement highlights the great potential of these devices for UHV applications.

关键词： AlGaN/GaN Schottky barrier diode Double-barrier anode Turn-on voltage Ultra-high-voltage

极性、半极性和非极性InN薄膜的MOCVD外延生长与表征

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发光学报 2024年第2期45卷 204-210页

作者：赵见国殷瑞徐儒倪海彬陶涛庄喆严羽谢自力刘斌常建华南京信息工程大学电子与信息工程学院江苏南京210044 南京大学电子科学与工程学院江苏南京210093

利用金属有机化合物化学气相沉积(MOCVD)技术,在不同晶面的蓝宝石(Al2O3)衬底上实现了极性(0002)面、半极性(11-22)面和非极性(11-20)面InN薄膜的外延生长,并通过多种表征手段对三个不同极性面InN薄膜的结构和光学特性进行了系统研究。... 详细信息

利用金属有机化合物化学气相沉积(MOCVD)技术,在不同晶面的蓝宝石(Al2O3)衬底上实现了极性(0002)面、半极性(11-22)面和非极性(11-20)面InN薄膜的外延生长,并通过多种表征手段对三个不同极性面InN薄膜的结构和光学特性进行了系统研究。X射线衍射(XRD)曲线展示了(0002)、(11-22)和(11-20)面InN较强的衍射峰,表明InN薄膜具有较高的成膜质量。通过扫描电子显微镜(SEM)表面图发现,极性(0002)面InN的表面形貌较光滑,而半极性和非极性InN表面均存在未完全合并的孔洞。光致发光(PL)光谱展示,不同极性面InN的峰值能量在0.63 eV附近,并从极性、半极性到非极性逐渐红移。此外,可见-红外分光光度计测得的透射谱显示,极性(0002)面InN的吸收边约为0.85 eV,而半极性(11-22)面和非极性(11-20)面InN的吸收边约为0.78 eV,表明极性InN具有更大的斯托克斯位移。

关键词：半极性面非极性面 InN薄膜外延生长

Photoluminescence investigation on highly p^+ -doped GaAs_(1-y)Sb_y(y<0.3)

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Science China(Technological Sciences) 2012年第11期55卷 3200-3203页

作者： GAO HanChao YIN ZhiJun CHENG Wei LI ZhongHui xie zili School of Electronic Science and Engineering Key Laboratory of Advanced Photonic and Electronic MaterialsNanjing UniversityNanjing 210093China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Photoluminescence properties of highly p＋-doped GaASl_ySby are investigated. Band gap narrowing （BGN） effect is considered for heavily doped GaAs1_ySby epilayers. Band-gap Eg（GaAsl_ySby）=l.25y2-1.95y＋1.519 is obtained through fitting band-gap energy obtained by PL spectra from 35 to 300 K. Fermi level （El） and full width at half maximum （FWHM） of photolumines- cence increase with antimony mole fraction. The increase of Fermi level is attributed to hole mass of GaAsl_ySby decrease which is resulted from antimony composition increase. The increase of Fermi level means that more electrons participate in in- direct transition to result in FWHM increases.

关键词： molecular beam epitaxy photoluminescence semiconducting III-V materials

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

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Chinese Physics B 2024年第1期33卷 631-636页

作者：陈凯赵见国丁宇胡文晓刘斌陶涛庄喆严羽谢自力常建华张荣郑有炓 Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210023China School of Electronics and Information Engineering Nanjing University of Information Science and TechnologyNanjing 210044China Xiamen University Xiamen 361005China

Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.

关键词： nonpolar a-plane GaN film Mg-doping temperature strains activation efficiency

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大口径管道烟气流量测量方法综述

热力发电 2024年第4期53卷 112-124页

作者：谢子立卢志民姚顺春刘泽明黄泳如莫爵徽叶建威林玥华南理工大学电力学院广东广州510641 佛山华谱测智能科技有限公司广东佛山528313

2021年全国碳市场开启,为了提高碳交易的准确性,需要做到碳排放数据的可测量、可报告、可核查。在这种背景下,烟气在线监测系统作为一种碳排放量化方法得到了重视。其有效工作的基础是烟气流量的准确测量。但电厂烟囱尺寸大,内部烟气流... 详细信息

2021年全国碳市场开启,为了提高碳交易的准确性,需要做到碳排放数据的可测量、可报告、可核查。在这种背景下,烟气在线监测系统作为一种碳排放量化方法得到了重视。其有效工作的基础是烟气流量的准确测量。但电厂烟囱尺寸大,内部烟气流动特性复杂,烟气流量难以准确测量。重点分析了皮托管流量计和气体超声波流量计在大口径管道流量测量中的研究现状,详细介绍了大口径管道气体流量测量技术。此外,还介绍了一种独立的流量测量方法—示踪气体稀释法,探讨其发展现状及作为一种流量标定方法的潜力。

关键词：大口径管道流量测量烟气流场示踪气体稀释法

Ferromagnetism of Ni-Doped ZnO Powders Prepared by Sol-Gel Method above Room Temperature

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Journal of Rare Earths 2006年第z1期24卷 186-188页

作者： Li Binbin Zhang Rong Xiu Xiangqian Tao Zhikuo Chen Lin xie zili Zheng Youdou Yu Huiqiang Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China Modern Analysis Center Nanjing University Nanjing 210093 China

The magnetic and structural properties of 2% Ni-doped ZnO powers prepared by sol-gel method were studied. X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) of the sample do not show existence of any signal of second phase. The X-photoelectron spectroscopy (XPS) of the sample shows the chemical valence of Ni is +2 and the real Ni concentration is 2.19% determined by X-ray fluorescence spectra (XRFS). The magnetic property performed with superconducting quantum interference device (SQUID) shows that the sample exhibits ferromagnetism above room temperature and the Curie temperature (TC) is about 600 K.

关键词： sol-gel Ni-doped ZnO powder ferromagnetism

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

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Light(Science & Applications) 2021年第6期10卷 976-1006页

作者： Qing Cai Haifan You Hui Guo Jin Wang Bin Liu zili xie Dunjun Chen Hai Lu Youdou Zheng Rong Zhang Key Laboratory of Advaneed Photonic and Electronic Materials School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China Collaborative In novation Center for Optoelectronic Semiconductors and Efficient Devices Department of PhysicsXiamen UniversityXiamen 361005China lnstitute of Future Display Tech no logy Tan Kah Kee Inno vati on LaboratoryXiamen 361102China

Solar-blind ultraviolet(UV)photodetectors(PDs)have attracted tremendous attention in the environmental,industrial,military,and biological *** a representative Ill-nitride material,AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties,such as tunable wide bandgaps for intrinsic UV *** recent decades,a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV *** integrated optoelectronic technology advances,AlGaN-based focal plane arrays(FPAs)are manufactured and exhibit outsta nding solar-blind imaging *** sidering the rapid development of AlGaN detection techniques,this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and ***,the basic physical properties of AlGaN are *** epitaxy and p-type doping problems of AlGaN alloys are then *** PDs,including photoconductors and Schottky,metal-semiconductor-metal(MSM),p-i-n,and avalanche photodiodes(APDs),are dem on strated,and the physical mechanisms are analyzed to improve device ***,this paper summarizes imaging technologies used with AlGaN FPAs in recent ***!ng from the development of AlGaN materials and optoelectronic devices,solar-blind UV detection technology is greeted with significant revolutions.

关键词： optoelectronic arrays ultraviolet

The parameters in the band-anticrossing model for In_xGa_(1-x)N_yP_(1-y) before and after annealing

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Science China(Physics,Mechanics & Astronomy) 2011年第12期54卷 2160-2163页

作者： ZHAO ChuanZhen ZHANG Rong LIU Bin YU LiYuan TANG ChunXiao xie zili XIU XiangQian ZHENG YouDou School of Information and Communication Engineering Tianjin Polytechnics University Tianjin 300160 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China

We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters.

关键词： InGaNP band gap bowing annealing

A model for thermal annealing on forming In—N clusters in InGaNP

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Science China(Physics,Mechanics & Astronomy) 2012年第5期55卷 798-801页

作者： ZHAO ChuanZhen CHEN Lei LI NaNa ZHANG HuanHuan CHEN YaFei WEI Tong TANG ChunXiao xie zili School of Electronics and Information Engineering Tianjin Polytechnics UniversityTianjin 300160China School of Textiles Tianjin Polytechnic UniversityTianfin 300160China Key Laboratory of Advanced Textile Composites Ministry of Education of ChinaTianjin 300160China College of Science Civil Aviation University of ChinaTianjin 300300China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Electronic Science and EngineeringNanjing UniversityNanjing 210093China

We develop a model for the effect of thermal annealing on forming In--N dusters in GalnNP according to thermodynamics. The average energy variation for forming an In--N bond in the model is estimated according to the theoretical calculation. Using the model, the added number of In--N bonds per mol of InGaNP, the added number of nearest-neighbor In atoms per N atom and the average number of nearest-neighbor In atoms per N atom after annealing are calculated. The different function of In--N clusters in InGaNP and InGaN is also discussed, which is due to the different environments around the In--N clusters.

关键词： InGaNP annealing In--N clusters thermodynamics

A modified simplified coherent potential approximation model of band gap energy of III-V ternary alloys

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Science China(Physics,Mechanics & Astronomy) 2012年第3期55卷 400-403页

作者： Zhao ChuanZhen Zhang Rong Liu Bin Fu DeYi Li Ming Xiu XiangQian xie zili Zheng YouDou Nanjing Univ Sch Elect Sci & Engn Jiangsu Prov Key Lab Adv Photon & Elect Mat Nanjing 210093 Jiangsu Peoples R China Tianjin Polytech Univ Sch Elect & Informat Engn Tianjin 300160 Peoples R China

Based on the modification of the simplified coherent potential approximation （SCPA）, a model is developed to calculate the composition dependence of the band gap energy of Ⅲ-V ternary alloys with the same anion. The derived equation is used to fit the experimental band gap energy of InxAl1-xN, InxGa1-xN and A1xGal xN with x from 0 to 1. It is found that the fitting results are better than those done by using SCPA. The fitting results are also better than those obtained by using the formula with a small bowing coefficient, especially for InxAl1-xN. In addition, our model can also be used to describe the composition de- pendence of band gap energy of other Ⅲ-V ternary alloys.

关键词： band gap energy coherent potential approximation ternary alloys