The parameters in the band-anticrossing model for In_xGa_(1-x)N_yP_(1-y) before and after annealing

作     者：ZHAO ChuanZhen ZHANG Rong LIU Bin YU LiYuan TANG ChunXiao XIE ZiLi XIU XiangQian ZHENG YouDou 

作者机构：School of Information and Communication Engineering Tianjin Polytechnics University Tianjin 300160 China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Department of Physics Nanjing University Nanjing 210093 China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2011年第54卷第12期

页      面：2160-2163页

核心收录：

学科分类：080503[工学-材料加工工程] 081902[工学-矿物加工工程] 0819[工学-矿业工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 0704[理学-天文学] 080201[工学-机械制造及其自动化] 

基　　金：supported by the Special Funds for Major State Basic Research Project (Grant No.2011CB301901) the National Natural Science Foundation of China (Grant Nos.60820106003, 60990311 and 60906025) the Natural Science Foundation of Jiangsu Province (Grant Nos.BK2008-019 and BK2009255) the Research Funds from NJU-Yangzhou Institute of Opto-electronics 

主　　题：InGaNP band gap bowing annealing 

摘      要：We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters.