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Journal of Semiconductors 2013年第11期34卷 25-30页

作者： P.Vimala n.b.balamurugan Department of Electronics and Communication Engineering Thiagarajar College of Engineering

An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.

关键词： surrounding gate MOSFETs energy quantization centroid inversion charge density

Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

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Journal of Semiconductors 2012年第3期33卷 15-19页

作者： P.Vimala n.b.balamurugan Department of Electronics and Communication Engineering Thiagarajar College of EngineeringMadurai-625015TamilnaduIndia

A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is ***＇s and Poisson＇s equations are solved simultaneously using a variational *** the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG *** inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed *** systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate *** effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively *** analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.

关键词： quantum mechanical effects DG MOSFETs centroid electric potential inversion-layer charge

Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects

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Journal of Semiconductors 2014年第3期35卷 20-24页

作者： P.Vimala n.b.balamurugan Department of Electronics and Communication Engineering Thiagarajar College of Engineering

Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.

关键词： device modeling energy quantization inversion charge density Poisson–Schrdinger equation trigate MOSFET

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

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Journal of Semiconductors 2014年第4期35卷 48-51页

作者： S.Theodore Chandra n.b.balamurugan national Instruments Electronics Laboratory Department of ECE Thiagarajar College of Engineering

We have analyzed the effective oxide thickness （EOT） of the dielectric material for which we have optimum performance and the output characteristics of the silicon nanowire transistors by replacing the traditional Si02 gate insulator with a material that has a much higher dielectric constant （high-k） gate, materials like Si3n4, Al2O3, Y2O3 and HfO2. We have also analyzed the channel conductance, the effect of a change in thickness, the average velocity of the charge carrier and the conductance efficiency in order to study the performance of silicon nanowire transistors in the nanometer region. The analysis was performed using the Fettoy, a numerical simulator for ballistic nanowire transistors using a simple top of the barrier （natori） approach, which is composed of several matlab scripts. Our results show that hafnium oxide （HfO2） gate insulator material provides good thermal stability, a high recrystallization temperature and better interface qualities when compared with other gate insulator materials; also the effective oxide thickness of lifO2 is found to be 0.4 nm.

关键词： high-k dielectric hafnium oxide silicon nanowire transistor effective oxide thickness

Analytical modeling and simulation of germanium single gate silicon on insulator TFET

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Journal of Semiconductors 2014年第3期35卷 25-28页

作者： T.S.Arun Samuel n.b.balamurugan Department of Electronics and Communication Engineering Thiagarajar College of Engineering

This paper proposes a new two dimensional（2D） analytical model for a germanium（Ge） single gate silicon-on-insulator tunnel field effect transistor（SG SOI TFET）. The parabolic approximation technique is used to solve the 2D Poisson equation with suitable boundary conditions and analytical expressions are derived for the surfacepotential,*** is derived further by using the electric fields. The results show that Ge based TFETs have significant improvements ***heanalytical model results with the technology computer aided design（TCAD） simulation results and also comparing them with results from a silicon based TFET.

关键词： tunnel field effect transistor(TFET) analytical modelling Poisson equation surface potential electric field

Subthreshold behavior of AlInSb/InSb high electron mobility transistors

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Chinese Physics b 2015年第7期24卷 360-364页

作者： S.Theodore Chandra n.b.balamurugan G.Lakshmi Priya S.Manikandan Department of Electronics and Communication Engineering Thiagarajar College of Engineering

We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.

关键词： scaling theory subthreshold behavior effective conducting path effect short channel effect

Analysis of charge density and Fermi level of Al In Sb/In Sb single-gate high electron mobility transistor

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Journal of Semiconductors 2015年第6期36卷 47-52页

作者： S.Theodore Chandra n.b.balamurugan M.bhuvaneswari n.Anbuselvan n.Mohankumar national Instruments Electronics Laboratory Department of ECE Thiagarajar College of Engineering Department of ECE SKP Engineering College

A compact model is proposed to derive the charge density of the AlInSb/InSb HEMT devices by con- sidering the variation of Fermi level, the first subband, the second subband and sheet carrier charge density with applied gate voltage. The proposed model considers the Fermi level dependence of charge density and vice versa. The analytical results generated by the proposed model are compared and they agree well with the experimental results. The developed model can be used to implement a physics based compact model for an InSb HEMT device in SPICE applications.

关键词： charge density Fermi level high electron mobility transistor 2D analytical model

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

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Journal of Semiconductors 2014年第11期35卷 46-50页

作者： S.Theodore Chandra n.b.balamurugan G.Subalakshmi T.Shalini G.Lakshmi Priya national Instruments Electronics Laboratory Department of ECEThiagarajar College of Engineering

We have developed a 2D analytical model for the single gate AllnSb/lnSb HEMT device by solving the Poisson equation using the parabolic approximation method. The developed model analyses the device perfomance by calculating the parameters such as surface potential, electric field distribution and drain current. The high mobility of the AlInSb/InSb quantum makes this HEMT ideal for high frequency, high power applications. The working of the single gate AllnSb/InSb HEMT device is studied by considering the variation of gate source voltage, drain source voltage, and channel length under the gate region and temperature. The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions. The results from the analytical model are compared with that of numerical simulations （TCAD） and a good agreement between them is achieved.

关键词： high electron mobility transistor AlInSb/InSb quantum well 2D analytical model Poisson's equation surface potential electric field

numerical Simulation of Thermocapillary Convection with Evaporation Induced by boundary Heating

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Fluid Dynamics & Materials Processing 2024年第7期20卷 1667-1686页

作者： O.n.Goncharova V.b.bekezhanova Altai State University Institute of Mathematics and Information TechnologiesBarnaul656049Russia Institute of Computational Modelling Sb RAS Department of Differential Equations of MechanicsKrasnoyarsk660036Russia

The dynamics of a bilayer system filling a rectangular cuvette subjected to external heating is *** influence of two types of thermal exposure on the flow pattern and on the dynamic contact angle is *** particular,the cases of local heating from below and distributed thermal load from the lateral walls are *** simulation is carried out within the frame of a two-sided evaporative convection model based on the boussinesq approximation.A benzine–air system is considered as reference *** variation in time of the contact angle is described for both heating *** lateral heating,near-wall boundary layers emerge together with strong convection,whereas the local thermal load from the lower wall results in the formation of multicellular motion in the entire volume of the fluids and the appearance of transition regimes followed by a steady-state *** results of the present study can aid the design of equipment for thermal coating or drying and the development of methods for the formation of patterns with required structure and morphology.

关键词： Thermocapillary convection two-phase system numerical modeling contact angle

RbC aggregation,deformation and adhesion to endothelium:Role of nitric oxide derived from L-Arginine and sodium nitroprusside

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Journal of Innovative Optical Health Sciences 2024年第5期17卷 53-65页

作者： M.K.Maksimov P.b.Ermolinskiy O.n.Scheglovitova n.n.Sklyankina A.V.Muravyov A.E.Lugovtsov A.V.Priezzhev Faculty of Physics M.V.Lomonosov Moscow State University bld.1subbuilding.2Leninskie goryMoscow 11991Russia n.F.Gamaleya national Research Center for Epidemiology and Microbiology 18 Gamaleya StreetMoscow 123098Russia K.D.Ushinsky Yaroslavl State Pedagogical University 108/1 Respublikanskaya StreetYaroslavl 150000Russia

Red blood cells(RbCs)are the most abundant human blood *** aggregation and deformation strongly determine blood viscosity which impacts hemorheology and *** turn,RbC properties depend on di®erent endogenous and exogenous *** such factor is nitric oxide(nO),which is mainly produced by endothelial cells(EC)from L-arginine amino acid in the circulatory *** the mechanisms of the RbC-endothelium interplay are not clear up to date and considering its possible clinical importance,the aims of this study are to investigate in vitro:(1)The e®ect of L-arginine induced nO on RbC aggregation and adhesion to endothelium;(2)the nO e®ect on RbC aggregation and deformation induced by L-arginine and sodium nitroprusside without the presence of endothelium in the *** RbC aggregation and adhesion to a monolayer of EC were studied using optical tweezers(OT).The RbC deformability and aggregation without endothelium in the samples were studied using the°ow chamber method and Myrenne *** con¯rmed that nO increases deformability and decreases aggregation of *** showed that the soluble guanylate cyclase pathway appears to be the only nO signaling pathway *** the samples with the endothelium,the\bell-shaped"dependence of RbC aggregation force on L-arginine concentration was observed,which improves our knowledge about the process of nO production by ***,data related to L-arginine accumulation by endothelium were obtained:necessity of the presence of extracellular L-arginine stated by other authors was put under *** our study,nO decreased the RbC-endothelium adhesion,however,the tendency appeared to be weak and was not con¯rmed in another set of *** our knowledge,this is the¯rst attempt to measure the forces of RbC adhesion to endothelium monolayer with OT.

关键词： Red blood cells aggregation L-arginine endothelium optical tweezers Myrenne flow chamber