Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

作     者：P.Vimala N.B.Balamurugan 

作者机构：Department of Electronics and Communication Engineering Thiagarajar College of Engineering 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第11期

页      面：25-30页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：the financial support by WOS-A Scheme Department of Science and Technology New Delhi  Government of India through the grant SR/WOS-A/ET41/2011 

主　　题：surrounding gate MOSFETs energy quantization centroid inversion charge density 

摘      要：An analytical model for surrounding gate metal-oxide-semiconductor field effect transistors （MOS- FETs） considering quantum effects is presented. To achieve this goal, we have used a variational approach for solving the Poisson and Schrodinger equations. This model is developed to provide an analytical expression for the inversion charge distribution function for all regions of the device operation. This expression is used to calculate the other important parameters like the inversion charge centroid, threshold voltage and inversion charge density. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different device dimensions and bias voltages. The calculated results are compared with the simulation results and they show good agreement.