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Characterisation of the optical properties of InGan MQW structures using a combined SEM and CL spectral mapping system

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Journal of Semiconductors 2011年第1期32卷 1-2页

作者： mark n.lockrey Matthew R.Phillips Physics and Advanced Materials University Technology

We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence （CL） spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGan/Gan multi quantum wells have also been characterized.

关键词： InGan/Gan quantum wells cathodoluminescence spectral mapping electron beam irradiation

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Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy

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nano Research 2017年第2期10卷 672-682页

作者： Alexander Berg Philippe Caroff naeem Shahid mark n. lockrey Xiaoming Yuan Magnus T. Borgstrom Hark Hoe Tan Chennupati Jagadish Solid State Physics and nanoLund Lund University Box 118 SE-221 00 Lund Sweden Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia Australian national Fabrication Facility Research School of Physics and Engineering The Australian National University Canberra ACT 2601 Australia

Ternary III-V nanowires （nWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP nW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform nW growth over a large array. The optical properties of the nWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the nW growth axis.

关键词： nanowire InGaP selective-area epitaxy cathodoluminescence energy-dispersive X-ray spectroscopy

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Highly regular rosette-shaped cathodoluminescence in Gan selfassembled nanodisks and nanorods

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nano Research 2020年第9期13卷 2500-2505页

作者： Bijun Zhao mark nicolas lockrey naiyin Wang Philippe Caroffu Xiaoming Yuan Li Li JenniferWong-Leung Hark Hoe Tan Chennupati Jagadish Departm ent of Electronic Materials Engineering Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Australian national Fabrication Facility Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia Hunan Key Laboratory for Supermicrostructure and Ultrafast Process School of Physics and ElectronicsCentral South University932 South Lushan RoadChangsha 410083China ARC Centre of Excellence for Transformative Meta-O ptical Systems Research School of PhysicsThe Australian National UniversityCanberra 0200ACTAustralia

Self-assembled Gan nanorods were grown by metal-organic chemical vapor deposition.A highly regular rosette-shaped cathodoluminescence pattern in the Gan nanorods is observed,where its origin is helpful to deepen the understanding of Gan nanorod *** pattern forms at the very early stages of nanorod growth,which consists of yellow luminescence at the edges and the non-luminous region at six vertices of the *** clarify its origin,we carried out detailed cathodoluminescence studies,electron microscopy studies and nanoscale secondary ion mass spectrometry at both the nanorod surface and *** found the pattern is not related to optical resonance modes or polarity inversion,which are commonly reported in Gan *** chemical composition and strain analysis,we found higher carbon and nitrogen cluster concentration and large compressive strain at the pattern *** pattern formation may relate to facet preferential distribution of non-radiative recombination centers related to excess carbon/*** work provides an insight into strain distribution and defect-related emission in Gan nanorod,which is critical for future optoelectronic applications.

关键词： metalorganic chemical vapor deposition(MOCVD) Gan nanorod cathodoluminescence yellow luminescence non-radiative recombination

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High-speed multiwavelength InGaAs/InP quantum well nanowire array micro-LEDs for next generation optical communications

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Opto-Electronic Science 2023年第5期2卷 1-11页

作者： Fanlu Zhang Zhicheng Su Zhe Li Yi Zhu nikita Gagrani Ziyuan Li mark lockrey Li Li Igor Aharonovich Yuerui Lu Hark Hoe Tan Chennupati Jagadish Lan Fu Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems Department of Electronic Materials EngineeringResearch School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia School of Electronic Science and Engineering Southeast UniversityNanjing 210096China Microstructural Analysis Unit University of Technology SydneySydney NSW 2007Australia Australian national Fabrication Facility ACT node Research School of PhysicsThe Australian National UniversityCanberra ACT 2601Australia ARC Centre of Excellence for Transformative Meta-Optical Systems Faculty of ScienceUniversity of Technology SydneySydney NSW 2007Australia School of Engineering College of Engineering and Computer ScienceThe Australia National UniversityCanberraCanberra ACT 2601Australia

Miniaturized light sources at telecommunication wavelengths are essential components for on-chip optical communication ***,we report the growth and fabrication of highly uniform p-i-n core-shell InGaAs/InP single quantum well(QW)nanowire array light emitting diodes(LEDs)with multi-wavelength and high-speed ***-dimensional cathodoluminescence mapping reveals that axial and radial QWs in the nanowire structure contribute to strong emission at the wavelength of~1.35 and~1.55μm,respectively,ideal for low-loss optical *** a result of simultaneous contributions from both axial and radial QWs,broadband electroluminescence emission with a linewidth of 286 nm is achieved with a peak power of~17μW.A large spectral blueshift is observed with the increase of applied bias,which is ascribed to the band-filling effect based on device simulation,and enables voltage tunable multi-wavelength operation at the telecommunication wavelength ***-wavelength operation is also achieved by fabricating nanowire array LEDs with different pitch sizes on the same substrate,leading to QW formation with different emission ***,high-speed GHz-level modulation and small pixel size LED are demonstrated,showing the promise for ultrafast operation and ultracompact *** voltage and pitch size controlled multi-wavelength highspeed nanowire array LED presents a compact and efficient scheme for developing high-performance nanoscale light sources for future optical communication applications.

关键词： InGaAs/InP quantum well nanowires LEDs

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