Growth and optical properties of InxGa1-xP nanowires synthesized by selective-area epitaxy

作     者：Alexander Berg Philippe Caroff Naeem Shahid Mark N. Lockrey Xiaoming Yuan Magnus T. Borgstrom Hark Hoe Tan Chennupati Jagadish 

作者机构：Solid State Physics and NanoLund Lund University Box 118 SE-221 00 Lund Sweden Department of Electronic Materials Engineering Research School of Physics and Engineering The Australian National University Canberra ACT2601 Australia Australian National Fabrication Facility Research School of Physics and Engineering The Australian National University Canberra ACT 2601 Australia 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2017年第10卷第2期

页      面：672-682页

核心收录：

学科分类：07[理学] 

基　　金：financed by the Swedish Foundation for Strategic Research (SSF) 

主　　题：nanowire InGaP selective-area epitaxy cathodoluminescence energy-dispersive X-ray spectroscopy 

摘      要：Ternary III-V nanowires （NWs） cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1-xP NW arrays using metal-organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross- section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.