Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

作     者：Mark N.Lockrey Matthew R.Phillips 

作者机构：Physics and Advanced Materials University Technology 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第1期

页      面：1-2页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：InGaN/GaN quantum wells cathodoluminescence spectral mapping electron beam irradiation 

摘      要：We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence （CL） spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized.