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The impact of nanoporous SiN_x interlayer growth position on high-quality GaN epitaxial films

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Chinese Science Bulletin 2011年第25期56卷 2739-2743页

作者： ma ziguang XING ZhiGang WANG XiaoLi CHEN Yao XU PeiQiang CUI YanXiang WANG Lu JIANG Yang JIA HaiQiang CHEN Hong Beijing National Laboratory of Condensed matter Institute of Physics Chinese Academy of Sciences Beijing 100190 China

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.

关键词：氮化硅外延片多孔层间氮化镓 GaN薄膜化学气相沉积法透射电子显微镜

Hybrid nano-scale Au with ITO structure for a high-performance near-infrared silicon-based photodetector with ultralow dark current

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Photonics Research 2020年第11期8卷 1662-1670页

作者： Xinxin Li Zhen Deng Jun Li Yangfeng Li Linbao Guo Yang Jiang ziguang ma Lu Wang Chunhua Du Ying Wang Qingbo Meng Haiqiang Jia Wenxin Wang Wuming Liu Hong Chen Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Center of materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Yangtze River Delta Physics Research Center Liyang 213000China Department of Physics School of ScienceBeijing Jiaotong UniversityBeijing 100044China Songshan Lake materials Laboratory Dongguan 523808China

An internal photoemission-based silicon photodetector detects light below the silicon bandgap at room temperature and can exhibit spectrally broad behavior,making it potentially suited to meet the need for a near-infrared pure Si *** this work,the implementation of a thin Au insertion layer into an ITO/n-Si Schottky photodetector can profoundly affect the barrier height and significantly improve the device *** fabricating a nanoscale thin Au layer and an ITO electrode on a silicon substrate,we achieve a well-behaved ITO/Au/n-Si Schottky diode with a record dark current density of 3.7×10^(−7) A/cm^(2) at−1 V and a high rectification ratio of 1.5×10^(8) at±1 ***,the responsivity has been obviously improved without sacrificing the dark current performance of the device by decreasing the Au *** a silicon-based photodetector with an enhanced performance could be a promising strategy for the realization of a monolithic integrated pure silicon photodetector in optical communication.

关键词： performance structure photodetector

Effect of Pt Interlayer on Low Resistivity Ohmic Contact to p-InP Layer and Its Optimization

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Chinese Physics Letters 2021年第6期38卷 72-75页

作者： Lili Han Chunhua Du ziguang ma Yang Jiang Kanglin Xiong Wenxin Wang Hong Chen Zhen Deng Haiqiang Jia Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Center of materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Songshan Lake materials Laboratory Dongguan 523808China The Yangtze River Delta Physics Research Center Liyang 213000China NANO-X Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

The contact characteristic between p-InP and metal plays an important role in InP-related optoelectronic and microelectronic device *** investigate the low-resistance Au/Pt/Ni and Au/Ni ohmic contacts to p-InP based on the solid phase regrowth *** lowest specific contact resistivity of Au(100 nm)/Pt(115 nm)/Ni(50 nm)can reach 2.64×10^(-6)Ω·cm^(2) after annealing at 380℃ for 1 min,while the contact characteristics of Au/Ni deteriorated after annealing from 340℃ to 480℃ for 1 *** results of scanning electron microscopy,atomic force microscopy and x-ray photoelectron spectroscopy show that the Pt layer is an important factor in improving the contact *** Pt layer prevents the diffusion of In and Au,inhibits the formation of Au3In metal compounds,and prevents the deterioration of the ohmic *** metal structures and optimized annealing process is expected to be helpful for obtaining high-performance InP-related devices.

关键词： resistance annealing Resistivity

Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation

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Chinese Physics B 2021年第9期30卷 384-387页

作者： Xinxin Li Zhen Deng Sen Wang Jinbiao Liu Jun Li Yang Jiang ziguang ma Chunhua Du Haiqiang Jia Wenxin Wang Hong Chen Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Center of materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Yangtze River Delta Physics Research Center Liyang 213000China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesChina Beijing National Laboratory for Condensed matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songshan Lake materials Laboratory Dongguan 523808China.

SiGe spheres with different diameters are successfully fabricated on a virtual SiGe template using a laser irradiation *** results from scanning electron microscopy and micro-Raman spectroscopy reveal that the diameter and Ge composition of the SiGe spheres can be well controlled by adjusting the laser energy *** addition,the transmission electron microscopy results show that Ge composition inside the SiGe spheres is almost uniform in a well-defined,nearly spherical *** a convenient method to prepare sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size,this technique is expected to be useful for SiGe-based material growth and micro/optoelectronic device fabrication.

关键词： SiGe micro/nanospheres laser irradiation

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

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Chinese Physics B 2018年第9期27卷 157-161页

作者： Yangfeng Li Yang Jiang Shen Yan Haiyan Wu Junhui Die Caiwei Wang ziguang ma Lu Wang Haiqiang Jia Wenxin Wang and Hong Chen Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 1 O0190China University of Chinese Academy of Sciences Beijing 100049China

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.

关键词： multiple quantum wells p-n junction light-to-electricity photocurrent

Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction

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Chinese Physics Letters 2019年第5期36卷 64-66页

作者： Gen Yue Zhen Deng Sen Wang Ran Xu Xinxin Li ziguang ma Chunhua Du Lu Wang Yang Jiang Haiqiang Jia Wenxin Wang Hong Chen Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190 Center of materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 Songshan Lake materials Laboratory Dongguan 523808

Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption *** speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.

关键词： Si In PIN

碳纤维蜂窝夹层结构防雷击铜网胶膜共固化设计及雷击与承载能力试验

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材料导报 2019年第S2期33卷 121-124页

作者：李林杰马子广中国直升机设计研究所

为有效防止直升机碳纤维蜂窝夹层复合材料蒙皮在雷击环境遭受雷击损伤,采用在蜂窝夹层结构表面铺设铜网胶膜一次固化成形的方法预防。针对直升机不同雷电附着区的七种典型蜂窝夹层结构采用A+B+C+D和D+B+C两种雷电流试验波形进行雷电直... 详细信息

为有效防止直升机碳纤维蜂窝夹层复合材料蒙皮在雷击环境遭受雷击损伤,采用在蜂窝夹层结构表面铺设铜网胶膜一次固化成形的方法预防。针对直升机不同雷电附着区的七种典型蜂窝夹层结构采用A+B+C+D和D+B+C两种雷电流试验波形进行雷电直接效应试验,并采用面内剪切试验对试验件雷击前/后承载能力和铜网胶膜对承载能力的影响进行试验对比分析。试验证明,在蜂窝夹层结构表面铺设铜网胶膜一次固化成形的方法,能够有效预防雷击损伤,试验件未出现基体大面积烧蚀、分层和片状剥落等现象;承载能力试验中蜂窝夹层结构表现沿载荷加载方向起皱破坏的模式;试验件在雷击前/后承载能力衰减不明显,最大衰减量为4.5%;铜网胶膜有助于提高试验件承载能力,C型试验件相比H型试验件承载能力提高了26.9%;试验件承载能力分散性相对较小,最大分散度为10.4%。

关键词：蜂窝夹层结构雷击铜网胶膜共固化设计承载能力

Adaptive Fuzzy Generalized Predictive Control for a Class of Unknown Parameters Multivariable Linear System

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Adaptive Fuzzy Generalized Predictive Control for a Class of...

第24届中国控制与决策会议

作者： Wuxi Shi, Yingxin ma, Yuchan Chen and ziguang Guo the School of Electrical Engineering and Automation, Tianjin Polytechnic University, tianjin, 300160,China

An adaptive fuzzy generalized predictive control scheme for a class of multivariable linear systems with unknown parameters is presented. With this scheme, the vector composed of fuzzy logic systems is used to design predictive controller directly, and the unknown vector in controller and the estimated value of approximation error are adjusted by time-varying adaptation laws. It is proved that the proposed method can make the tracking error converge to a neighborhood of the origin.

关键词： multivariable linear system generalized predictive control adaptive fuzzy control stability analysis

来源： cnki会议评论

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一种基于FPGA的等效焦平面电路的设计

电子器件 2019年第4期42卷 909-913页

作者：马游春孙宇梦郭淳马子光中北大学电子测试技术国家重点实验室太原030051 仪器科学与动态测试教育部重点实验室太原030051

为实现对某型号卫星红外遥感器内部信号处理电路的测试,提出一种基于FPGA的等效焦平面电路的设计。系统以FPGA为控制核心,通过USB3.0接口接收上位机发送的模拟红外图像数据并对其进行存储。根据上位机指令以及探测驱动信号产生指定图像... 详细信息

为实现对某型号卫星红外遥感器内部信号处理电路的测试,提出一种基于FPGA的等效焦平面电路的设计。系统以FPGA为控制核心,通过USB3.0接口接收上位机发送的模拟红外图像数据并对其进行存储。根据上位机指令以及探测驱动信号产生指定图像的8路探测器拟合信号给信号处理电路,同时将指定图像数据通过Cameralink接口上传并显示。对比源图像和处理后的图像,结果表明所设计的等效焦平面电路能够模拟红外探测器的输出信号,为信号处理电路提供可靠信号源,对保证红外遥感器的性能具有重要意义。

关键词：等效焦平面现场可编程门阵列(FPGA) 探测器拟合信号红外遥感器 Cameralink