The impact of nanoporous SiN_x interlayer growth position on high-quality GaN epitaxial films

作     者：MA ZiGuang XING ZhiGang WANG XiaoLi CHEN Yao XU PeiQiang CUI YanXiang WANG Lu JIANG Yang JIA HaiQiang CHEN Hong 

作者机构：Beijing National Laboratory of Condensed Matter Institute of Physics Chinese Academy of Sciences Beijing 100190 China 

出 版 物：《Chinese Science Bulletin》 (Chin. Sci. Bull.)

年 卷 期：2011年第56卷第25期

页      面：2739-2743页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China (50872146and60890192/F0404) the Nationa Basic Research Program of China (2010CB327501) 

主　　题：氮化硅 外延片 多孔 层间 氮化镓 GaN薄膜 化学气相沉积法 透射电子显微镜 

摘      要：The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.