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Comparative Analysis of Ti,Ni,and Au Electrodes on Characteristics of TiO_2 Nanofibers for Humidity Sensor Application

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Journal of materials Science & Technology 2013年第5期29卷 411-414页

作者： S.S.Batool Z.Imran m.Israr Qadir m.Usman H.Jamil m.A Rafiq m.m.Hassan m.willander micro and Nano Devices Group Department of Metallurgy and Materials EngineeringPakistan Institute of Engineering and Applied SciencesPO NiloreIslamabad 45650Pakistan Department of Science and Technology Campus NorrkpingLinkping UniversitySE-60174 NorrkpingSweden

The effect of metal （Ti, Ni, and Au） electrodes on humidity sensing properties of electrospun TiO2 nanofibers was investigated in this work. The devices were fabricated by evaporating metal contacts on SiO2 layer thermally grown on silicon substrate. The separation between the electrodes was 90 μm for all sensors. The sensors were tested from 40% to 90% relative humidity （RH） by AC electrical characterization at room temperature. When sensors are switched between 40% and 90% RH, the corresponding response and recovery time are 3 s and 5 s for Ti-electrode sensor, 4 s and 7 s for Ni-electrode sensor, and 7 s and 13 s for Au-electrode sensor. The hysteresis was 3%, 5% and 15% for sensitivity of Ti, Ni, and Au-electrode sensors are Ti-, Ni-, and Au-electrode sensor, respectively. The 7.53 mΩ/%RH, 5.29 mΩ/%RH and 4.01 mΩ/%RH respectively at 100 Hz. Therefore Ti-electrode sensor is found to have linear response, fast response and recovery time and higher sensitivity as compared with those of Ni- and Au-electrode sensors. Comparison of humidity sensing properties of sensors with different electrode material may propose a compelling route for designing and optimizing humidity sensors.

关键词： Titanium dioxide Nanofibers metal electrodes Humidity sensor

Non-Enzymatic Glucose Sensor Based on the Novel Flower Like morphology of Nickel Oxide

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Soft Nanoscience Letters 2013年第4期3卷 46-50页

作者： Z.H.Ibupoto K.Khun V.Beni m.willander Division of Physical Electronics and Nanotechnology Department of Science and TechnologyLinköping UniversityCampus NorrkopingNorrkopingSweden Department of Physics Chemistryand Biology(IFM)Linkoping UniversityLinkopingSwe-den

In this study, novel nickel oxide (NiO) flowers like nanostructures were fabricated onto gold coated glass substrate by hydrothermal method using high alkaline pH medium. The structural study of nickel oxide nanostructures was performed by scanning electron microscopy (SEm) and X-ray differaction (XRD) techniques. Nickel oxide nanostructures are highly dense, uniform and possess good crystalline quality. The so prepared structures were investigated for their electrochemical properties by cyclic voltammetry and amperometric techniques. The nickel oxide flower like morphology has shown good electrochemical performances for the oxidation of glucose. The presented sensing material was able to detected glucose in a wide range of concentration of 0.001 mm to 8 mm with a high sensitivity (123 μmA/mm) and regression coefficient of 0.99. moreover, the NiO nanostructures based sensor is highly reproducible, stable, exhibiting a fast response time and selective in the response. All the obtained results indicate the potential use of this material in the development of enzyme free sensors for the detection of glucose.

关键词： Nickel Oxide Non-Enzymatic Sensor Glucose Selective Stable

V形GaAs/AlGaAs量子线结构的微区光致发光谱研究

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物理学报 2000年第9期49卷 1809-1813页

作者：李志锋陆卫刘兴权沈学础 Y.FU m.willander H.H.TAN C.JAGADISH 中国科学院上海技术物理研究所红外物理国家实验室上海200083 microelectronic Centerat Chalmers Physical Electronics and Photonics Department of PhysicsUniversity of Gteborg and Chalmers University of Technology Department of Electronic material Engineering Research School of Physical Science and Engineeringthe Australian National University

在室温下用显微光致发光的方法对单根V形GaAs/AlGaAs量子线进行了沿垂直于量子线方向的空间分辨扫描测试 ,观察到各种量子结构的光致发光谱随空间位置的变化 .在量子线区域附近观察到来自量子线 (QWR)、颈部量子阱 (NQWL)和垂直量子阱 (... 详细信息

在室温下用显微光致发光的方法对单根V形GaAs/AlGaAs量子线进行了沿垂直于量子线方向的空间分辨扫描测试 ,观察到各种量子结构的光致发光谱随空间位置的变化 .在量子线区域附近观察到来自量子线 (QWR)、颈部量子阱 (NQWL)和垂直量子阱 (VQWL)等各种结构的发光 ,而在距离量子线约 1μm以远的发光光谱表现出侧面量子阱 (SQWL)的发光 .对全部发光光谱用高斯线形进行了拟合 ,发现QWR和SQWL的发光包含了两个荧光峰 ,将它们分别归诸为电子到轻、重空穴的跃迁 .拟合后发光强度的空间变化直接确定了与量子线结构相关的发光起源 ,并且反映出由于载流子由SQWL迁移进入QWR造成SQWL发光峰的淬灭 .

关键词： V形 AlGaAs 量子线显微光致发光砷化镓

QUANTUm mECHANICAL mODEL AND SImULATION OF GaAs/AlGaAs QUANTUm WELL INFRARED PHOTO-DETECTOR-ⅠOPTICAL ASPECTS

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红外与毫米波学报 2002年第6期21卷 321-326页

作者： Fu Y willander m Li Ning Lu W Physical Electronics and Photonics Microtechnology Center at ChalmersDepartment of Microelectronics and NanoscienceChalmers University of TechnologyFysikgrand 3S-412 96 GothenburgSweden National Laboratory for Infrared Physics Shanghai Institute of Tec hnical PhysicsChinese Academy of Sciences500 YuTian RoadShanghai 200083China

A complete quantum mechanical model for GaAs?AlGaAs quantum well infrared photodetectors(QWIPs) is presented here. The model consisted of four parts: (1) Starting with the description of the electromagnetic field of the infrared radiation in the QWIP, effective component of the vector potential along the QWIP growth direction ( z axis) due to the optical diffraction grating was calculated. (2) From the wave transmissions and the occupations of the electronic states, it was discussed that the dark current in the QWIP is determined by the drift diffusion current of carriers thermally excited from the ground sublevel in the quantum well to extended states above the barrier. (3) The photocurrent was investigated by the optical transition (absorption coefficient between the ground state to excited states due to the nonzero ). (4) By studying the inter diffusion of the Al atoms across the GaAs?AlGaAs heterointerfaces,the mobility of the drift diffusion carriers in the excited states was calculated, so the measurement results of the dark current and photocurrent spectra can be explained theoretically. With the complete quantum mechanical descriptions of (1 4), QWIP device design and optimization are possible.

关键词： GaAs/AlGaAs photodetector quantum well infrared photodetector(QWIP) quantum mechanical model

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OPTICAL SPECTRA OF LOW-DImENSIONAL SEmICONDUCTORS

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红外与毫米波学报 2003年第6期22卷 401-405页

作者： Fu Y Chiragwandi Z Gthberg P willander m Laboratory for Physical Electronics and Photonics Department of Physics and Engineering PhysicsChalmers University of TechnologyLaboratory for Physical Electronics and PhotonicsDepartment of Physics and Engineering PhysicsChalmers University of TechnologyLaboratory for Physical Electronics and PhotonicsDepartment of Physics and Engineering PhysicsChalmers University of TechnologyLaboratory for Physical Electronics and PhotonicsDepartment of Physics and Engineering PhysicsChalmers University of Technology S-412 96 GteborgSwedenS-412 96 GteborgSwedenS-412 96 GteborgSwedenS-412 96 GteborgSweden

We have studied the optical spectra of low-dimensional semiconductor systems by calculating all possible optical transitions between electronic states. Optical absorption and emission have been obtained under different carrier population conditions and in different photon wavelengths. The line-shapes of the peaks in the optical spectrum are determined by the density of electronic states of the system, and the symmetries and intensities of these peaks can be improved by reducing the dimensionality of the system. Optical gain requires in general a population inversion, whereas for a quantum-dot system, there exists a threshold value of the population inversion.

关键词：光谱低维半导体光学增益总体反转数值分析

Semiconductor ZnO Nano-Rods Thin Film Grown on Silver Wire for Hemoglobin Biosensor Fabrication

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New Journal of Glass and Ceramics 2015年第2期5卷 9-15页

作者： I. K. Battisha H. A. Wahab A. A. Salama A. A. El Saeid m. willander O. Nur Solid State Physics Department Physics Division National Research Centre (NRC) Dokki Egypt Physics Department Al-Azhar University Cairo Egypt Department of Science and Technology Campus Norrk&oumlping Link&oumlping University Norrk&oumlping Sweden

Wurtzite hexagonal ZnO semiconductor nano-rods (NRs) thin films were grown on silicon substrates and silver wire with diameter equal 68 nm. Sol gel (SG) and aqueous chemical growth (ACG) methods by two steps of preparation (seed layers and nano-rod growth) are used for samples preparation. The structural and morphological properties are evaluated using X-ray diffraction (XRD) and scanning electron microscope (SEm). The proposed iron ion sensor has shown good linearity for a wide concentration range from 0.078 m/L to 0.26 m/L of iron ions. The results show that the electrode is highly sensitive to iron ions with a slope around 47.8 mV/decade with a regression coefficient R2 = 0.96.

关键词： ZnO Nano-Rods Thin Films Sol-Gel X-Ray Diffraction Scanning Electron microscope and Hemoglobin Biosensor

Determination of A.C. Conductivity of Nano-Composite Perovskite Ba(1- x - y)Sr(x)TiFe(y)O3Prepared by the Sol-Gel Technique

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Journal of Crystallization Process and Technology 2012年第1期2卷 1-11页

作者： m. willander O. Nur m. Q. Israr A. B. Abou Hamad F. G. El Desouky m. A. Salem I. K. Battisha 不详

Nano-composite, perovskite Ba(1- x - y)Sr(x)TiFe(y)O3, denoted as (BSTFe) in powder form was derived via sol-gel (SG) method followed by sintering at fixed temperature 750℃ for one hour. The chemical composition, morphology and structure of the powder samples were investigated by using X-ray diffraction (XRD), transmission electron microscope (TEm) and scanning electron microscope (SEm). The XRD characterization indicates formation of a cubic crystalline phase in the pure BST. A well defined perovskite phase with nano-crystallite sizes equal to about 34 nm was achieved from XRD for B10ST3F sample, while TEm study confirmed the obtained XRD results giving the following crystallite size value about 33.75 nm for the same sample. The dielectric A.C. conductivity was evaluated as a function of temperature and frequency ranging from 42 Hz up to 1 mHz.

关键词： Sol-Gel Dielectric Permittivity A.C. Conductivity Nano-Composite BaSrTiO3 (BST) TEm XRD and SEm