检索结果-南通市图书馆

Comparative effectiveness of several adjuvant therapies after hepatectomy for hepatocellular carcinoma patients with microvascular invasion

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

World Journal of Gastrointestinal Surgery 2024年第2期16卷 554-570页

作者： Yin-Xuan Pei Chen-Guang Su Zheng Liao Wei-Wei Li Zi-Xiang Wang jin-long liu Department of Hepatobiliary Surgery The Affiliated Hospital of Chengde Medical UniversityChengde 067000Hebei ProvinceChina

BACKGROUND For resectable hepatocellular carcinoma(HCC),radical hepatectomy is commonly used as a curative ***,postoperative recurrence significantly diminishes the overall survival(OS)of HCC patients,especially with microva-scular invasion(MVI)as an independent high-risk factor for *** some studies suggest that postoperative adjuvant therapy may decrease the risk of recurrence following liver resection in HCC patients,the specific role of adju-vant therapies in those with MVI remains *** To conduct a network meta-analysis(NMA)to evaluate the efficacy of various adjuvant therapies and determine the optimal adjuvant *** A systematic literature search was conducted on PubMed,EMBASE,and Web of Science until April 6,*** comparing different adjuvant therapies or comparing adjuvant therapy with hepatectomy alone were *** ratios(HRs)with 95%confidence intervals were used to combine data on recurrence free survival and OS in both pairwise meta-analyses and *** Fourteen eligible trials(2268 patients)reporting five different therapies were *** terms of reducing the risk of recurrence,radiotherapy(RT)[HR=0.34(0.23,0.5);surface under the cumulative ranking curve(SUCRA)=97.7%]was found to be the most effective adjuvant therapy,followed by hepatic artery infusion chemotherapy[HR=0.52(0.35,0.76);SUCRA=65.1%].Regarding OS improvement,RT[HR:0.35(0.2,0.61);SUCRA=93.1%]demonstrated the highest effectiveness,followed by sorafenib[HR=0.48(0.32,0.69);SUCRA=70.9%].INTRODUCTION Hepatocellular carcinoma(HCC)is the sixth most common malignant tumor in the world and ranks third in terms of worldwide malignant tumor mortality rates in 2020[1].Curative treatments for HCC include ablation,radical hepatectomy,and liver ***,ablation is suitable only for early-stage HCC patients,who represent a small percentage of the overall HCC *** liver transplantation serves as the optimal tre

关键词： Hepatocellular carcinoma Adjuvant therapy Network meta-analysis Transarterial chemoembolization Hepatic artery infusion chemotherapy Radiotherapy Sorafenib

Effect of surface modification on the radiation stability of diamond ohmic contacts

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Physics B 2024年第2期33卷 444-448页

作者：牟恋希赵上熳王鹏原晓芦刘金龙朱志甫陈良贤魏俊俊欧阳晓平李成明 Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China School of Mechanical Engineering University of Science and Technology BeijingBeijing 100083China School of Information Engineering Zhengzhou University of TechnologyZhengzhou 450044China State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Northwest Institute of Nuclear TechnologyXi’an 710024China

The ohmic contact interface between diamond and metal is essential for the application of diamond *** modification can significantly affect the contact performance and eliminate the interface polarization ***,the radiation stability of a diamond detector is also sensitive to surface *** this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was *** radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),*** 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),*** rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,*** electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.

关键词： single crystal diamond ohmic contact surface modification electron radiation

Modeling of air quality with a modified two-dimensional Eulerian model: A case study in the Pearl River Delta (PRD) region of China

在线全文

学校读者我要写书评

暂无评论

Journal of Environmental Sciences 2007年第5期19卷 572-577页

作者： CHENG Yan-li BAI Yu-hua LI jin-long liu Zhao-rong College of Environmental Sciences Peking University Beijing 100871 China

A modified two-dimensional Eulerian air quality model was used to simulate both the gaseous and particulate pollutant concentrations during October 21-24, 2004 in the Pearl River Delta （PRD） region, China. The most significant improvement to the model is the added capability to predict the secondary organic aerosols （SOA） concentrations because of the inclusion of the SOA formation chemistry. The meteorological input data were prepared using the CALMET meteorological model. The concentrations of aerosol-bound species such as NO3^-, NH4^＋, SO4^2-, and SOA were calculated in the fine particle size range （〈2.5 μm）. The results of the two-dimensional model were compared to the measurements at the ground level during the PRD Intensive Monitoring Campaign （IMC）. Overall, there were good agreements between the measured and modeled concentrations of inorganic aerosol components and O3. Both the measured and the modeled results indicated that the maximum hourly O3 concentrations exceeded the China National Air Quality Standard. The predicted 24-h average SOA concentrations were in reasonable agreement with those predicted by the method of minimum OC/EC ratio.

关键词： air quality model numerical simulation secondary organic aerosol inorganic aerosol

Fixation of CO_2 by electrocatalytic reduction to synthesis of dimethyl carbonate in ionic liquid using effective silver-coated nanoporous copper composites

在线全文

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2010年第8期21卷 987-990页

作者： Xuan Yun Wang Su Qin liu Ke long Huang Qiu Ju Feng De Lai Ye Bing liu jin long liu Guan Hua jin College of Chemistry and Chemical Engineering Central South UniversityChangsha 410083China

With high surface area,open porosity and high efficiency,a catalyst was prepared and firstly employed in electrocatalytic reduction of CO2 and electrosynthesis of dimethyl carbonate（DMC）.The electrochemical property for electrocatalytic reduction of CO2 in ionic liquid was studied by cyclic voltammogram（CV）.The effects of various reaction variables like temperature,working potential and cathode materials on the electrocatalytic performance were also investigated.80%yield of DMC was obtained under the optimal reaction conditions.

关键词： Electrocatalytic Carbon dioxide Nanoporous Dimethyl carbonate Ionic liquid

Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputtering

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2015年第10期22卷 1108-1114页

作者： Liang-xian Chen Sheng liu Cheng-ming Li Yi-chao Wang jin-long liu Jun-jun Wei Institute for Advanced Materials and Technology University of Science and Technology Beijing School of Electrical and Computer Engineering RMIT University

Radio frequency(RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide(Zn O) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the(002) preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the(002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.

关键词： zinc oxide thin films doping deposition magnetron

Electron drift velocity and mobility in graphene

在线全文

学校读者我要写书评

暂无评论

Frontiers of physics 2018年第2期13卷 153-157页

作者： Hai-Ming Dong Yi-Feng Duan Fei Huang jin-long liu School of Physical Science and Technology China University of Mining and Technology Xuzhou 221116 China Low Carbon Energy Institute China University of Mining and Technology Xuzhou 221116 China School of Materials Science and Engineering China University of Mining and Technology Xuzhou 221116 China

We present a theoretical study of the electric transport properties of graphene-substrate systems. The drift velocity, mobility, and temperature of the electrons are self-consistently determined using the Boltzmann equilibrium equations. It is revealed that the electronic transport exhibits a distinctly nonlinear behavior. A very high mobility is achieved with the increase of the electric fields increase. The electron velocity is not completely saturated with the increase of the electric field. The temperature of the hot electrons depends quasi-linearly on the electric field. In addition, we show that the electron velocity, mobility, and electron temperature are be employed for the application of graphene for sensitive to the electron density. These findings could high-field nano-electronic devices.

关键词： graphene mobility nano-electronic devices

Recent progress in diamond-based MOSFETs

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2019年第10期26卷 1195-1205页

作者： Xiao-lu Yuan Yu-ting Zheng Xiao-hua Zhu jin-long liu Jiang-wei liu Cheng-ming Li Peng jin Zhan-guo Wang Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Research Center for Functional Materials National Institute for Materials Science(NIMS)1-1 NamikiTsukubaIbaraki 305-0044Japan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.

关键词： diamond MOSFETs semiconductor carrier mobility doping

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2017年第12期24卷 1424-1430页

作者： Li-fu Hei Yun Zhao Jun-jun Wei jin-long liu Cheng-ming Li Fan-xiu Lü Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition(CVD) were examined using a low-temperature photoluminescence(PL) technique. The results show that most of the nitrogen-vacancy(NV) complexes are present as NV-centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N_2 incorporation and the high mobility of vacancies under growth temperatures of 950–1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy(Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition(MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV-centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

关键词： diamond single crystals direct current arc plasma jet chemical vapor deposition photoluminescence optical spectra

Carrier transport characteristics of H-terminated diamond films prepared using molecular hydrogen and atomic hydrogen

在线全文

学校读者我要写书评

暂无评论

International Journal of Minerals,Metallurgy and Materials 2017年第7期24卷 850-856页

作者： jin-long liu Liang-xian Chen Yu-ting Zheng jing-jing Wang Zhi-hong Feng Cheng-ming Li Institute for Advanced Materials and Technology University of Science and Technology Beijing Science and Technology on ASIC Laboratory Hebei Semiconductor Research Institute

The H-terminated diamond films, which exhibit high surface conductivity, have been used in high-frequency and high-power electronic devices. In this paper, the surface conductive channel on specimens from the same diamond film was obtained by hydrogen plasma treatment and by heating under a hydrogen atmosphere, respectively, and the surface carrier transport characteristics of both samples were compared and evaluated. The results show that the carrier mobility and carrier density of the sample treated by hydrogen plasma are 15 cm^2·V^（-1）·s^（-1） and greater than 5 × 1012 cm^（-2）, respectively, and that the carrier mobilities measured at five different areas are similar. Compared to the hydrogen-plasma-treated specimen, the thermally hydrogenated specimen exhibits a lower surface conductivity, a carrier density one order of magnitude lower, and a carrier mobility that varies from 2 to 33 cm^2·V^（-1）·s^（-1）. The activated hydrogen atoms restructure the diamond surface, remove the scratches, and passivate the surface states via the etching effect during the hydrogen plasma treatment process, which maintains a higher carrier density and a more stable carrier mobility.

关键词： H-termination diamond film surface conductivity carrier mobility plasma treatment