Enhanced deposition of Zn O films by Li doping using radio frequency reactive magnetron sputtering

作     者：Liang-xian Chen Sheng Liu Cheng-ming Li Yi-chao Wang Jin-long Liu Jun-jun Wei 

作者机构：Institute for Advanced Materials and TechnologyUniversity of Science and Technology Beijing School of Electrical and Computer EngineeringRMIT University 

出 版 物：《International Journal of Minerals,Metallurgy and Materials》 (矿物冶金与材料学报（英文版）)

年 卷 期：2015年第22卷第10期

页      面：1108-1114页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：financially supported by the National Natural Science Foundation of China(No.51272024) the China Postdoctoral Science Foundation(No.2014M560042) 

主　　题：zinc oxide thin films doping deposition magnetron 

摘      要：Radio frequency(RF) reactive magnetron sputtering was utilized to deposit Li-doped and undoped zinc oxide(Zn O) films on silicon wafers. Various Ar/O2 gas ratios by volume and sputtering powers were selected for each deposition process. The results demonstrate that the enhanced Zn O films are obtained via Li doping. The average deposition rate for doped Zn O films is twice more than that of the undoped films. Both atomic force microscopy and scanning electron microscopy studies indicate that Li doping significantly contributes to the higher degree of crystallinity of wurtzite–Zn O. X-ray diffraction analysis demonstrates that Li doping promotes the(002) preferential orientation in Li-doped Zn O films. However, an increase in the Zn O lattice constant, broadening of the(002) peak and a decrease in the peak integral area are observed in some Li-doped samples, especially as the form of Li2 O. This implies that doping with Li expands the crystal structure and thus induces the additional strain in the crystal lattice. The oriented-growth Li-doped Zn O will make significant applications in future surface acoustic wave devices.