Recent progress in diamond-based MOSFETs

作     者：Xiao-lu Yuan Yu-ting Zheng Xiao-hua Zhu Jin-long Liu Jiang-wei Liu Cheng-ming Li Peng Jin Zhan-guo Wang 

作者机构：Institute for Advanced Materials and TechnologyUniversity of Science and Technology BeijingBeijing 100083China Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Research Center for Functional MaterialsNational Institute for Materials Science(NIMS)1-1 NamikiTsukubaIbaraki 305-0044Japan Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《International Journal of Minerals,Metallurgy and Materials》 (矿物冶金与材料学报（英文版）)

年 卷 期：2019年第26卷第10期

页      面：1195-1205页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0709[理学-地质学] 0819[工学-矿业工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0806[工学-冶金工程] 0708[理学-地球物理学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National Key Research and Development Program of China (No.2018YFB0406501) the Beijing Municipal Science and Technology Commission (No. Z181100004418009) the National Natural Science Foundation of China (No.51702313) 

主　　题：diamond MOSFETs semiconductor carrier mobility doping 

摘      要：Recent developments in the use of diamond materials as metal-oxide-semiconductor field-effect transistors (MOSFETs) are in- troduced in this article, including an analysis of the advantages of the device owing to the unique physical properties of diamond materials, such as their high-temperature and negative electron affinity characteristics. Recent research progress by domestic and international research groups on performance improvement of hydrogen-terminated and oxygen-terminated diamond-based MOSFETs is also summarized. Currently, preparation of large-scale diamond epitaxial layers is still relatively difficult, and improvements and innovations in the device structure are still ongoing. However, the key to improving the performance of diamond-based MOSFET devices lies in improving the mobility of channel carriers. This mainly includes improvements in doping technologies and reductions in interface state density or carrier traps. These will be vital research goals for the future of diamond-based MOSFETs.