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Active disturbance rejection control for hydraulic width control system for rough mill

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Journal of Zhejiang University-Science A(Applied Physics & Engineering) 2007年第9期8卷 1429-1434页

作者： ZOU Jun fu Xin yang hua-yong Institute State Key Laboratoty of Fhtid Power Transmission and Control. Zhejiang University Hangzhou 310027 China

The highly nonlinear behavior of the system limits the performance of classical linear proportional and integral （PI） controllers used for hot rolling. An active disturbance rejection controller is proposed in this paper to deal with the nonlinear problem of hydraulic servo system in order to preserve last response and small overshoot of control system. The active disturbance rejection （ADR） controller is composed of nonlinear tracking differentiator （TD）, extended state observer （ESO） and nonlinear feedback （NF） law. An example of the hydraulic edger system case study is investigated to show the effectiveness and robustness of the proposed nonlinear controller, especially, in the circumstance of foreign disturbance and working condition variation, compared with classic PI controller.

关键词： Active disturbance rejection (ADR) Hydraulic servo system Width control Rough mill

Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors

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Chinese Physics B 2020年第3期29卷 436-441页

作者： Liu-Hong Ma Wei-hua Han fu-hua yang School of Physics and Microelectronics Zhengzhou UniversityZhengzhou 450001China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Engineering Research Center for Semiconductor Integrated Technology Beijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

The ionized dopants, working as quantum dots in silicon nanowires, exhibit potential advantages for the development of atomic-scale transistors. We investigate single electron tunneling through a phosphorus dopant induced quantum dots array in heavily n-doped junctionless nanowire transistors. Several subpeaks splittings in current oscillations are clearly observed due to the coupling of the quantum dots at the temperature of 6 K. The transport behaviors change from resonance tunneling to hoping conduction with increased temperature. The charging energy of the phosphorus donors is approximately 12.8 meV. This work helps clear the basic mechanism of electron transport through donor-induced quantum dots and electron transport properties in the heavily doped nanowire through dopant engineering.

关键词： junctionless nanowire transistor quantum transport hopping transport quantum dot

Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor

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Chinese Physics B 2022年第1期31卷 579-584页

作者： yang-Yan Guo Wei-hua Han Xiao-Di Zhang Jun-Dong Chen fu-hua yang Engineering Research Center for Semiconductor Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Science Beijing 100193China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We investigate the influence of source and drain bias voltages(V_(DS))on the quantum sub-band transport spectrum in the 10-nm width N-typed junctionless nanowire transistor at the low temperature of 6 *** demonstrate that the transverse electric field introduced from V_(DS) has a minor influence on the threshold voltage of the *** transverse electric field plays the role of amplifying the gate restriction effect of the *** one-dimensional(1D)-band dominated transport is demonstrated to be modulated by V_(DS) in the saturation region and the linear region,with the sub-band energy levels in the channel(E_(channel))intersecting with Fermi levels of the source(E_(fS))and the drain(E_(fD))in turn as V_(g) *** turning points from the linear region to the saturation region shift to higher gate voltages with V_(DS) increase because the higher Fermi energy levels of the channel required to meet the situation of E_(fD)=E_(channel).We also find that the bias electric field has the effect to accelerate the thermally activated electrons in the channel,equivalent to the effect of thermal temperature on the increase of electron *** work provides a detailed description of the bias-modulated quantum electronic properties,which will give a more comprehensive understanding of transport behavior in nanoscale devices.

关键词： junctionless nanowire transistors quantum transport spectrum source and drain voltage lowtemperature conductance

Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors

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Chinese Physics B 2018年第8期27卷 593-597页

作者： Liu-Hong Ma Wei-hua Han Xiao-Song Zhao yang-Yan Guo Ya-Mei Dou fu-hua yang School of Physical Engineering Zhengzhou UniversityZhengzhou 450001China School of Electronic Electrical and Communication EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Engineering Research Center for Semiconductor Integrated Technology Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technolog34 Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences.Beiiine 100083 China

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus- doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased.

关键词： junctionless nanowire transistor quantum transport Hubbard band quantum dot

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

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Chinese Physics B 2019年第10期28卷 517-522页

作者： yang-Yan Guo Wei-hua Han Xiao-Song Zhao Ya-Mei Dou Xiao-Di Zhang Xin-Yu Wu fu-hua yang Engineering Research Center for Semiconductor Integrated Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance *** are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.

关键词： junctionless nanowire transistors temperature-dependent conductance variable range hopping localization length

Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor

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Chinese Physics B 2019年第12期28卷 315-319页

作者： Xiao-Di Zhang Wei-hua Han Wen Liu Xiao-Song Zhao yang-Yan Guo Chong yang Jun-Dong Chen fu-hua yang Engineering Research Center for Semiconductor Integrated Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We investigated single-electron tunneling through single and coupling dopant-induced quantum dots(QDs) in silicon junctionless nanowire transistor(JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.

关键词： silicon nanowire transistor single electron tunneling dopant-induced quantum dots tunneling current spectroscopy

A novel fuzzy sensor fusion algorithm

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Journal of Coal Science & Engineering(China) 2011年第4期17卷 457-460页

作者： fu hua yang Yi-kui MAKe LIU Yu-jia Faculty of Electrical and Control Engineering Liaoning Technical University Huludao 125105 China

A novel fusion algorithm was given based on fuzzy similarity and fuzzy integral theory. First, it calculated the fuzzy similarity among a certain sensor＇s measurement values and the multiple sensors＇ objective prediction values to determine the importance weight of each sensor and realize multi-sensor data fusion. Then according to the determined importance weight, an intelligent fusion system based on fuzzy integral theory was given, which can solve FEI-DEO and DEI-DEO fusion problems and realize the decision fusion. Simulation results were proved that fuzzy integral algorithm has enhanced the capability of handling the uncertain information and improved the intelligence degrees

关键词： fuzzy similarity fuzzy integral data fusion decision fusion multi-sensor

Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

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Chinese Physics B 2019年第6期28卷 357-360页

作者： Ya-Mei Dou Wei-hua Han yang-Yan Guo Xiao-Song Zhao Xiao-Di Zhang Xin-Yu Wu fu-hua yang Engineering Research Center for Semiconductor Integration Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.

关键词： effective subband mobility thermal activation Coulomb scattering silicon nanowire transistor

Impact of Local Climate Zones on the Urban Heat and Dry Islands in Beijing:Spatial Heterogeneity and Relative Contributions

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Journal of Meteorological Research 2024年第1期38卷 126-137页

作者： Zuofang ZHENG fu LUO Nana LI hua GAO Yuanjian yang Institute of Urban Meteorology China Meteorological AdministrationBeijing 100089 School of Atmospheric Physics Nanjing University of Information Science&TechnologyNanjing 210044 Key Laboratory of Urban Meteorology China Meteorological AdministrationBeijing 100089

Based on the building height and density data on a 100-m resolution,hourly 2-m temperature and humidity data at83 automatic weather stations,and gridded local climate zone(LCZ)data on a 120-m resolution in urban Beijing in2020,this study first employs the semivariogram combined with building parameters to calculate spatial correlations and has identified an LCZ grid resolution of 500 m suitable for best usage of the available observation ***,how the spatially heterogeneous LCZs affect and contribute to the canopy urban heat island intensity(UHII)and urban dry island intensity(UDII)are quantitatively *** is found that UHII is high in winter and low in summer with a unimodal diurnal variation while UDI is low in winter but high in summer with a bimodal diurnal *** LCZ with compact mid-rise(open high-rise)buildings exhibits the highest UHII(UDII),followed by the compact high-rise(compact low-rise),while the LCZ of scattered trees presents both the lowest UHII and the lowest *** most significant difference in the UHII(UDII)among the nine LCZ types in the urban area of Beijing is2.62℃(1.1 g kg^(-1)).Area-weighted averaging analysis reveals that the open mid-rise LCZ is the most significant contributor to the UHII(UDII),immediately followed by compact mid-rise(open low-rise),with the least contribution from bare rock or paved(scattered trees).The results also indicate that beyond the intrinsic physical properties of the LCZs of a city,their area proportions cannot be overlooked in evaluating their impact on the UHI and *** quantitatively findings could help urban planners to create a livable urban climate and environment by adjusting the relevant land use.

关键词： local climate zone(LCZ) urban heat island(UHI) urban dry island(UDI) distribution pattern contribution rate Beijing