Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

作     者：Yang-Yan Guo Wei-Hua Han Xiao-Song Zhao Ya-Mei Dou Xiao-Di Zhang Xin-Yu Wu Fu-Hua Yang 郭仰岩;韩伟华;赵晓松;窦亚梅;张晓迪;吴歆宇;杨富华

作者机构：Engineering Research Center for Semiconductor Integrated Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第10期

页      面：517-522页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the National Key R&D Program of China(Grant No.2016YFA0200503) the National Natural Science Foundation of China(Grant No.61327813) 

主　　题：junctionless nanowire transistors temperature-dependent conductance variable range hopping localization length 

摘      要：We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance *** are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in Vg1 and valley in Vg2. The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages Vg1 and Vg2. This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.