Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

作     者：Ya-Mei Dou Wei-Hua Han Yang-Yan Guo Xiao-Song Zhao Xiao-Di Zhang Xin-Yu Wu Fu-Hua Yang 窦亚梅;韩伟华;郭仰岩;赵晓松;张晓迪;吴歆宇;杨富华

作者机构：Engineering Research Center for Semiconductor Integration Technology&Beijing Engineering Center of Semiconductor Micro-Nano Integrated TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China State Key Laboratory for Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第6期

页      面：357-360页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0200503) 

主　　题：effective subband mobility thermal activation Coulomb scattering silicon nanowire transistor 

摘      要：We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.