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Modeling of a SiGeSn quantum well laser

Photonics Research 2021年第7期9卷 1234-1254页

作者： BAHAREH MARZBAN DANIELA STANGE DENIS RAINKO zoran ikonic DAN BUCA JEREMY WITZENS Institute of Integrated Photonics RWTH Aachen University52074 AachenGermany Jülich-Aachen Research Alliance(JARA) Fundamentals of Future Information TechnologiesGermany Peter Grünberg Institute 52428 JulichGermany University of Leeds School of Electronic and Electrical EngineeringWoodhouseLeeds LS29JTUK

We present comprehensive modeling of a Si GeSn multi-quantum well laser that has been previously experimentally shown to feature an order of magnitude reduction in the optical pump threshold compared to bulk *** combine experimental material data obtained over the last few years with k·p theory to adapt transport,optical gain,and optical loss models to this material system (drift-diffusion,thermionic emission,gain calculations,free carrier absorption,and intervalence band absorption). Good consistency is obtained with experimental data,and the main mechanisms limiting the laser performance are discussed. In particular,modeling results indicate a low non-radiative lifetime,in the 100 ps range for the investigated material stack,and lower than expectedΓ-L energy separation and/or carrier confinement to play a dominant role in the device properties. Moreover,they further indicate that this laser emits in transverse magnetic polarization at higher temperatures due to lower intervalence band absorption losses. To the best of our knowledge,this is the first comprehensive modeling of experimentally realized Si GeSn lasers,taking the wealth of experimental material data accumulated over the past years into account. The methods described in this paper pave the way to predictive modeling of new (Si)GeSn laser device concepts.

关键词： laser polarization pump

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Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

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Photonics Research 2020年第6期8卷 788-798页

作者： BRIAN JULSGAARD NILS VON DEN DRIESCH PETER TIDEMAND-LICHTENBERG CHRISTIAN PEDERSEN zoran ikonic DAN BUCA Department of Physics and Astronomy Aarhus UniversityNy Munkegade 120DK-8000 Aarhus CDenmark Peter Grinberg Institute 9(PGI 9) Forschungszentrum Jilich52425 JilichGermany JARA-Institut Green IT RWTH AachenGermany DTU Fotonik Technical University of DenmarkFrederiksborgvej 399DK-4000 RoskildeDenmark Pollard Institute School of Electronic and Electrical EngineeringUniversity of LeedsLeedsUK

We present an experimental setup capable of time resolved photoluminescence spectroscopy for photon energies in the range of0.51 to 0.56 eV with an instrument time response of75 *** detection system is based on optical parametric three wave mixing,operates at room temperature,has spectral resolving power,and is shown to be well suited for investigating dynamical processes in germanium-tin *** particular,the carrier lifetime ofa direct-bandgap Ge1-xSnx film with concentration x=12.5%and biaxial strain-0.55%is determined to be 217±15 ps at a temperature of 20 K.A room-temperature investigation indicates that the variation in this life-time with temperature is very *** characteristics of the photoluminescence as a function of pump fuence are discussed.

关键词： lifetime resolved spectral

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