Carrier lifetime of GeSn measured by spectrally resolved picosecond photoluminescence spectroscopy

作     者：BRIAN JULSGAARD NILS VON DEN DRIESCH PETER TIDEMAND-LICHTENBERG CHRISTIAN PEDERSEN ZORAN IKONIC DAN BUCA 

作者机构：Department of Physics and AstronomyAarhus UniversityNy Munkegade 120DK-8000 Aarhus CDenmark Peter Grinberg Institute 9(PGI 9)Forschungszentrum Jilich52425 JilichGermany JARA-Institut Green ITRWTH AachenGermany DTU FotonikTechnical University of DenmarkFrederiksborgvej 399DK-4000 RoskildeDenmark Pollard InstituteSchool of Electronic and Electrical EngineeringUniversity of LeedsLeedsUK 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2020年第8卷第6期

页      面：788-798页

核心收录：

学科分类：0808[工学-电气工程] 070207[理学-光学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Bundesministerium fur Bildung und Forschung (GESNAPHOTO) Deutsche Forschungsgemeinschaft (SiGeSn Laser for Silicon Photonics) 

主　　题：lifetime resolved spectral 

摘      要：We present an experimental setup capable of time resolved photoluminescence spectroscopy for photon energies in the range of0.51 to 0.56 eV with an instrument time response of75 *** detection system is based on optical parametric three wave mixing,operates at room temperature,has spectral resolving power,and is shown to be well suited for investigating dynamical processes in germanium-tin *** particular,the carrier lifetime ofa direct-bandgap Ge1-xSnx film with concentration x=12.5%and biaxial strain-0.55%is determined to be 217±15 ps at a temperature of 20 K.A room-temperature investigation indicates that the variation in this life-time with temperature is very *** characteristics of the photoluminescence as a function of pump fuence are discussed.