Modeling of a SiGeSn quantum well laser

作     者：BAHAREH MARZBAN DANIELA STANGE DENIS RAINKO ZORAN IKONIC DAN BUCA JEREMY WITZENS 

作者机构：Institute of Integrated PhotonicsRWTH Aachen University52074 AachenGermany Jülich-Aachen Research Alliance(JARA)Fundamentals of Future Information TechnologiesGermany Peter Grünberg Institute52428 JulichGermany University of LeedsSchool of Electronic and Electrical EngineeringWoodhouseLeeds LS29JTUK 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2021年第9卷第7期

页      面：1234-1254页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Deutsche Forschungsgemeinschaft (299480227) 

主　　题：laser polarization pump 

摘      要：We present comprehensive modeling of a Si GeSn multi-quantum well laser that has been previously experimentally shown to feature an order of magnitude reduction in the optical pump threshold compared to bulk *** combine experimental material data obtained over the last few years with k·p theory to adapt transport,optical gain,and optical loss models to this material system (drift-diffusion,thermionic emission,gain calculations,free carrier absorption,and intervalence band absorption). Good consistency is obtained with experimental data,and the main mechanisms limiting the laser performance are discussed. In particular,modeling results indicate a low non-radiative lifetime,in the 100 ps range for the investigated material stack,and lower than expectedΓ-L energy separation and/or carrier confinement to play a dominant role in the device properties. Moreover,they further indicate that this laser emits in transverse magnetic polarization at higher temperatures due to lower intervalence band absorption losses. To the best of our knowledge,this is the first comprehensive modeling of experimentally realized Si GeSn lasers,taking the wealth of experimental material data accumulated over the past years into account. The methods described in this paper pave the way to predictive modeling of new (Si)GeSn laser device concepts.