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Simulation of SiC radiation detector degradation

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Chinese Physics B 2019年第1期28卷 300-305页

作者： Hai-Li Huang Xiao-Yan Tang Hui Guo yi-men zhang Yu-Tian Wang Yu-Ming zhang School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University

Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.

关键词： 4H-SiC detector degradation simulation Z1/2 defect

Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

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Chinese Physics B 2018年第10期27卷 598-606页

作者： Shi-Zheng Yang Hong-Liang Lv Yu-Ming zhang yi-men zhang Bin Lu Si-Lu Yan School of Microelectronics Xidian Universitythe State Key Laboratory of Wide Band Gap Semiconductor TechnologyXi＇an 710071China

In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with *** influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.

关键词： thermal analysis temperature distribution iterative algorithm compound semiconductor inte-grated circuit

Hysteresis effect in current–voltage characteristics of Ni/n-type 4H-SiC Schottky structure

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Chinese Physics B 2019年第11期28卷 316-321页

作者： Hao Yuan Qing-Wen Song Chao Han Xiao-Yan Tang Xiao-Ning He Yu-Ming zhang yi-men zhang School of Microelectronics Xidian UniversityXi’an 710071China

Hysteresis current–voltage(Ⅰ–Ⅴ) characteristics are often observed in a highly non-ideal(n > 2) as-deposited nickel(Ni)/4 H-SiC Schottky contact. However, we find that this kind of hysteresis effect also exists in an as-deposited Ni/n-type4 H-SiC Schottky structure even if the ideality factor(n) is less than 1.2. The hysteresis Ⅰ–Ⅴ characteristics is studied in detail in this paper by using the various measurements including the hysteresis Ⅰ–Ⅴ, sequentialⅠ–Ⅴ sweeping, cycle Ⅰ–Ⅴ,constant reverse voltage stress(CRVS). The results show that the hysteresis Ⅰ–Ⅴ characteristics are strongly dependent on the sweeping voltage and post-deposition annealing(PDA). The high temperature PDA(800℃) can completely eliminate this hysteresis. Meanwhile, the magnitude of the hysteresis effect is shown to decrease in the sequential Ⅰ–Ⅴ sweeping measurement, which is attributed to the fact that the electrons tunnel from the 4 H-SiC to the localized states at the Ni/ntype 4 H-SiC interface. It is found that the application of the reverse bias stress has little effect on the emission of those trapped electrons. And a fraction of the trapped electrons will be gradually released with the time under the condition of air and with no bias. The possible physical charging mechanism of the interface traps is discussed on the basis of the experimental findings.

关键词： 4H-SiC Schottky hysteresis Ⅰ–Ⅴ Schottky barrier height

Effect of growth temperature of GaAsxSb1-x metamorphic buffer layer on electron mobility of InAs/AlSb heterostructures grown on Si substrate

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Chinese Physics B 2019年第11期28卷 364-369页

作者： Jing zhang Hong-Liang Lv Hai-Qiao Ni Shi-Zheng Yang Xiao-Ran Cui Zhi-Chuan Niu yi-men zhang Yu-Ming zhang School of Microelectronics Xidian University and the State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXi’an 710071China State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.

关键词： Si sticking coefficients growth temperature GaAsxSb1-x metamorphic buffer

界面态电荷对6H碳化硅N沟MOSFET阈值电压和跨导的影响

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物理学报 2002年第4期51卷 771-775页

作者：汤晓燕张义门张玉明西安电子科技大学微电子研究所西安710071

针对界面态密度在禁带中的不均匀分布 ,并且考虑到碳化硅材料中杂质的不完全离化 ,分析了界面态电荷对N沟 6H碳化硅MOSFET阈值电压和跨导的影响 .结果显示界面态密度的不均匀分布不仅使阈值电压增大 ,而且还会导致器件跨导变低。

关键词：碳化硅界面态电荷阈值电压跨导界面态密度 MOS器件金属-氧化物-半导体场效应器件

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

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Chinese Physics B 2016年第3期25卷 362-365页

作者：宋庆文汤晓燕何艳静唐冠男王悦湖张艺蒙郭辉贾仁需吕红亮张义门张玉明 School of Advanced Materials and Nanotechnology Xidian University Xi'an 710071 China Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China

In this paper, the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors （MOSF- FETs） have been fabricated and characterized. A sandwich- （nitridation-oxidation-nitridation） type process was used to grow the gate dielectric film to obtain high channel mobility. The interface properties of 4H-SiC/SiO2 were examined by the measurement of HF l-V, G-V, and C-V over a range of frequencies. The ideal C-V curve with little hysteresis and the frequency dispersion were observed. As a result, the interface state density near the conduction band edge of 4H-SiC was reduced to 2 x 1011 ***-2, the breakdown field of the grown oxides was about 9.8 MV/cm, the median peak field- effect mobility is about 32.5 cm2.V-1 .s-1, and the maximum peak field-effect mobility of 38 cm2-V-1 .s-1 was achieved in fabricated lateral 4H-SiC MOSFFETs.

关键词： metal-oxide-semiconductor field-effect transistors 4H-SiC field-effect mobility oxidation pro-cess

Identifying the dynamic behaviors in complete reconstruction of Co-based complex precatalysts during electrocatalytic oxygen evolution

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Journal of Energy Chemistry 2025年第1期100卷 226-233页

作者： Jingfang zhang Danyang Wu Linke Cai Youluan Lu Fanpeng Cheng Lijuan Shi Qun yi Yao Liu yi Huang Key Laboratory of Green Chemical Engineering Process of Ministry of Education Engineering Research Center of Phosphorus Resources Development and Utilization of Ministry of Education Hubei Key Laboratory of Novel Reactor and Green Chemical Technology School of Chemical Engineering & Pharmacy Wuhan Institute of Technology Key Laboratory of Pesticide & Chemical Biology of Ministry of Education Engineering Research Center of Photoenergy Utilization for Pollution Control and Carbon Reduction of Ministry of Education College of Chemistry Central China Normal University College of Materials Science and Engineering Fuzhou University

Transition metal-based nanomaterials have emerged as promising electrocatalysts for oxygen evolution reaction（OER）. Considerable research efforts have shown that self-reconstruction occurs on these nanomaterials under operating conditions of OER process. However, most of them undergo incomplete reconstruction with limited thickness of reconstruction layer, leading to low component utilization and arduous exploration of real catalytic mechanism. Herein, we identify the dynamic behaviors in complete reconstruction of Co-based complexes during OER. The hollow phytic acid（PA） cross-linked CoFe-based complex nanoboxes with porous nanowalls are designed because of their good electrolyte penetration and mass transport ability, in favor of the fast and complete reconstruction. A series of experiment characterizations demonstrate that the reconstruction process includes the fast substitution of PA by OH-to form Co（Fe）(OH)xand subsequent potential-driven oxidation to Co（Fe）OOH. The obtained CoFeOOH delivers a low overpotential of 290 mV at a current density of 10 mA cm-2and a long-term *** experiment results together with theory calculations reveal that the Fe incorporation can result in the electron rearrangement of reconstructed CoFeOOH and optimization of their electronic structure,accounting for the enhanced OER activity. The work provides new insights into complete reconstruction of metal-based complexes during OER and offers guidelines for rational design of high-performance electrocatalysts.

关键词： Complete reconstruction Co-based complex Precatalysts Oxygen evolution reaction

Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 interface buffer layer

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Effect of electrical stress on the Al2O3-based 4H-SiC MOS ca...

碳化硅基上3UCVD淀积二氧化硅及其C-V性能测试

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： yi-men zhang Qing-Wen Song Yu-Ming zhang Xiao-Yan Tang Ren-Xu Jia Yue-Hu Wang Hong-Liang Lü Ya-Jun Duo Chen Liu School of Microelectronics Xidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices

The effect of electrical stress on the Al2O3-based n-4H-SiC metal oxide semiconductor（MOS） capacitor with a thin SiO2 interfacial buffer layer（IBL） has been *** electrical characteristics of MOS capacitors have been measured using capacitance- voltage（C-V）,current-voltage（I-V）and charge trapping behavior of the films under constant voltage stressing （CVS）to understand the reliability and the interface trapping characteristics of Al2O3/SiO2/n-4H-SiC gate *** is found that Al2O3/SiO2 stack layer has lower positive charge generation and smaller flatband voltage shift under constant voltage stressing,which exhibits an excellent interface quality and high dielectric reliability making this structure suitable for 4H-SiC power devices applications.

关键词： Logic gates Stress Dielectrics Aluminum oxide Capacitance-voltage characteristics MOS capacitors Charge carrier processes

来源： cnki会议评论

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cnki会议

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物理学报 2004年第9期53卷 3225-3228页

作者：汤晓燕张义门张鹤鸣张玉明戴显英胡辉勇西安电子科技大学微电子研究所西安710071

利用 3UCVD技术在p型 4H SiC上制备了栅氧化层 ,其正的氧化物电荷密度仅有 1 6× 1 0 1 1 cm- 2 ,这一结果优于传统的热氧化工艺 .为检验氧化层质量所做的高频C V测试采用了正面接地的新的测试结构。

关键词：碳化硅材料 MOS器件二氧化硅高频C-V测试半导体材料