Effect of electrical stress on the Al2O3-based 4H-SiC MOS capacitor with a thin SiO2 interface buffer layer
作者单位：School of MicroelectronicsXidian UniversityKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices
会议名称：《2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)》
会议日期：2012年
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：the support fromNatural Science Foundation of China with grant No.61176070 Doctoral Fund of Ministry of Education of China with grant No.20110203110010
关 键 词：Logic gates Stress Dielectrics Aluminum oxide Capacitance-voltage characteristics MOS capacitors Charge carrier processes
摘 要：The effect of electrical stress on the Al2O3-based n-4H-SiC metal oxide semiconductor（MOS） capacitor with a thin SiO2 interfacial buffer layer（IBL） has been *** electrical characteristics of MOS capacitors have been measured using capacitance- voltage（C-V）,current-voltage（I-V）and charge trapping behavior of the films under constant voltage stressing （CVS）to understand the reliability and the interface trapping characteristics of Al2O3/SiO2/n-4H-SiC gate *** is found that Al2O3/SiO2 stack layer has lower positive charge generation and smaller flatband voltage shift under constant voltage stressing,which exhibits an excellent interface quality and high dielectric reliability making this structure suitable for 4H-SiC power devices applications.