Simulation of SiC radiation detector degradation
Simulation of SiC radiation detector degradation作者机构：School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2019年第28卷第1期
页 面：300-305页
核心收录：
学科分类：082704[工学-辐射防护及环境保护] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0827[工学-核科学与技术] 0704[理学-天文学]
基 金：Project supported by the National Key R&D Program of China(Grant No.2016YFB0400400)
主 题：4H-SiC detector degradation simulation Z1/2 defect
摘 要：Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the driftdiffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.
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