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Optimized operation scheme of flash-memory-based neural network online training with ultra-high endurance

Journal of Semiconductors 2024年第1期45卷 33-37页

作者： Yang Feng Zhaohui Sun Yueran Qi xuepeng zhan Junyu zhang Jing Liu Masaharu Kobayashi Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266200China Neumem Co. LtdHefei 230093China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100084China Institute of Industrial Science The University of TokyoTokyoJapan

With the rapid development of machine learning,the demand for high-efficient computing becomes more and more urgent.To break the bottleneck of the traditional Von Neumann architecture,computing-in-memory(CIM)has attracted increasing attention in recent years.In this work,to provide a feasible CIM solution for the large-scale neural networks(NN)requiring continuous weight updating in online training,a flash-based computing-in-memory with high endurance(10^(9) cycles)and ultrafast programming speed is investigated.On the one hand,the proposed programming scheme of channel hot electron injection(CHEI)and hot hole injection(HHI)demonstrate high linearity,symmetric potentiation,and a depression process,which help to improve the training speed and accuracy.On the other hand,the low-damage programming scheme and memory window(MW)optimizations can suppress cell degradation effectively with improved computing accuracy.Even after 109 cycles,the leakage current(I_(off))of cells remains sub-10pA,ensuring the large-scale computing ability of memory.Further characterizations are done on read disturb to demonstrate its robust reliabilities.By processing CIFAR-10 tasks,it is evident that~90%accuracy can be achieved after 109 cycles in both ResNet50 and VGG16 NN.Our results suggest that flash-based CIM has great potential to overcome the limitations of traditional Von Neumann architectures and enable high-performance NN online training,which pave the way for further development of artificial intelligence(AI)accelerators.

关键词： NOR flash memory computing-in-memory endurance neural network online training

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Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistors

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Science China(Information Sciences) 2022年第8期65卷 297-298页

作者： xuepeng zhan Jiezhi CHEN Zhigang JI School of Information Science and Engineering Shandong University State Key Laboratory of High-end Server and Storage Technology National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiaotong University

Dear editor,Random telegraph noise(RTN) has attracted rising attention with the diminishing device size. In each device, the number of dopant atoms and defects reduces to quantifiable levels, resulting in higher time-zero and-dependent variability. RTN is observed as the sudden and random discrete drain current fluctuation under constant voltage,

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A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

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Journal of Materials Science & Technology 2022年第33期128卷 239-244页

作者： Yaning Wang Wanying Li Yimeng Guo Xin Huang Zhaoping Luo Shuhao Wu Hai Wang Jiezhi Chen Xiuyan Li xuepeng zhan Hanwen Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaShenyang 110016China Department of Applied Physics Aalto UniversityAaltoFinland School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266237China

Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a transistor,has been intensively studied in two-dimensional layered materials(2 DLM),which show potential for applications in such as neuromorphic computation.However,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and tunability.Furthermore,those known 2 DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per area.Until now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains challenging.Here,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2 D ferroelectric materials CuInP_(2)S_(6)(CIPS)into a graphite/CuInP_(2)S_(6)/MoS_(2)vertical heterostructure.Memristive behaviour and multi-level resistance states were realized.Essential synaptic behaviours including excitatory postsynaptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully mimicked.Moreover,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate tuned.Our findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.

关键词： van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing

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Femtosecond laser processing of microcavity lasers

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Frontiers of Optoelectronics 2016年第3期9卷 420-427页

作者： xuepeng zhan Huailiang XU Hongbo SUN State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China

In this paper, we reviewed the fabrications of functional microcavity lasers in soft materials such as polymer and protein by femtosecond laser processing. High-quality （Q） microdisks with a laser dye （Rhodamine B, RhB） acting as gain medium were fabricated that produced whispering-gallery-mode （WGM） lasing output. We also obtained unidirectional lasing output with a low lasing threshold in a deformed spiral microcavity at room temperature. Photonic-molecule （PM） microlasers were prepared to investigate the interaction and coupling effects of different cavities, and it was found that the distance between the two disks plays an important role in the lasing behaviors. Single-mode lasing was realized from a stacked PM microlaser through Vernier effect. Furthermore we adopted the biocompatible materials, RhB-doped proteins as a host material and fabricated a three-dimensional （3D） WGM microlaser, which operated well both in air and aqueous environment. The sensing of the protein micro- lasers to Na2SO4 concentration was investigated. Our results of fabricating high-Q microlasers with different materials reveal the potential applications of femtosecond laser processing in the areas of integrated optoelectronic and ultrahigh sensitive bio-sensing devices.

关键词： femtosecond laser processing microcavity lasers polymer protein

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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Science China(Information Sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG xuepeng zhan Junyu zhanG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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Flash memory based computing-in-memory system to solve partial differential equations

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Science China(Information Sciences) 2021年第6期64卷 257-258页

作者： Yang FENG Fei WANG xuepeng zhan Yuan LI Jiezhi CHEN School of Information Science and Engineering Shandong University

Dear editor,Many emerging non-volatile memories(NVM), such as resistive random access memory(RRAM) [1], phase-change memory(PCM) [2], and ferroelectric RAM(FeR AM) [3],together with the conventional flash memory [4, 5... 详细信息

关键词： Flash memory based computing-in-memory system to solve partial differential equations

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Flash-based in-memory computing for stochastic computing in image edge detection

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Journal of Semiconductors 2023年第5期44卷 145-149页

作者： Zhaohui Sun Yang Feng Peng Guo Zheng Dong Junyu zhang Jing Liu xuepeng zhan Jixuan Wu Jiezhi Chen School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266000China Shandong Sinochip Semiconductors Co.Ltd Jinan 250101China Neumem Co. LtdHefei 230088China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The“memory wall”of traditional von Neumann computing systems severely restricts the efficiency of data-intensive task execution,while in-memory computing(IMC)architecture is a promising approach to breaking the bottleneck.Although variations and instability in ultra-scaled memory cells seriously degrade the calculation accuracy in IMC architectures,stochastic computing(SC)can compensate for these shortcomings due to its low sensitivity to cell disturbances.Furthermore,massive parallel computing can be processed to improve the speed and efficiency of the system.In this paper,by designing logic functions in NOR flash arrays,SC in IMC for the image edge detection is realized,demonstrating ultra-low computational complexity and power consumption(25.5 fJ/pixel at 2-bit sequence length).More impressively,the noise immunity is 6 times higher than that of the traditional binary method,showing good tolerances to cell variation and reliability degradation when implementing massive parallel computation in the array.

关键词： in-memory computing stochastic computing NOR flash memory image edge detection

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2010-2022年非手术疗法治疗肩袖损伤研究文献可视化分析

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中国中医药图书情报杂志 2024年第3期48卷 89-95页

作者：侯学鹏吕子萌陶庄占茂林王晓增姜超叶盛张宇安徽中医药大学第一临床医学院安徽合肥230031 安徽省中西医结合医院安徽合肥230031 安徽中医药大学第一附属医院安徽合肥230031

目的探索非手术疗法治疗肩袖损伤的研究现状、研究趋势和研究热点,为临床应用提供参考。方法检索中国知识资源总库、中国学术期刊数据库、中文科技期刊数据库2010年1月1日-2022年12月31日非手术疗法治疗肩袖损伤研究文献,使用CiteSpace5... 详细信息

目的探索非手术疗法治疗肩袖损伤的研究现状、研究趋势和研究热点,为临床应用提供参考。方法检索中国知识资源总库、中国学术期刊数据库、中文科技期刊数据库2010年1月1日-2022年12月31日非手术疗法治疗肩袖损伤研究文献,使用CiteSpace5.8.R3、VOSviewer1.6.18软件对作者、研究机构、关键词进行可视化分析。结果共纳入文献273篇,涉及作者790位,高发文量作者以杨明煜为代表,发文量较高的研究机构为广州中医药大学、安徽中医药大学。纳入关键词281个,形成4个关键词聚类,聚类标签包括物理因子治疗、药物注射治疗、中医药治疗和康复治疗;突现关键词有高压氧疗法、小针刀、温针灸、ucla评分、富血小板血浆等。结论近13年,我国非手术疗法治疗肩袖损伤研究已由平稳发展期过渡到快速发展期;非手术疗法治疗肩袖损伤种类较多,中西医结合临床疗效显著;该领域研究热点主要为作用机制、激痛点理论、数据挖掘等。

关键词：肩袖损伤非手术治疗 CiteSpace软件 VOSviewer软件可视化分析

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基于“筋-经-骨”理念的李氏推拿疗法治疗伴小关节紊乱的颈型颈椎病临床观察

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河北中医 2024年第3期46卷 451-455页

作者：占茂林张宇吕子萌栾国瑞侯学鹏姜超叶盛李业甫安徽中医药大学第一附属医院推拿科安徽合肥230031 安徽省中西医结合医院推拿科安徽合肥230001 安徽中医药大学第一临床医学院安徽合肥230038

目的观察基于“筋-经-骨”理念的李氏推拿疗法治疗伴小关节紊乱的颈型颈椎病临床疗效。方法将70例伴小关节紊乱的颈型颈椎病患者按照随机数字表法分为2组,对照组35例予常规推拿治疗,治疗组35例予李氏推拿疗法治疗。2组均隔日治疗1次,治... 详细信息

目的观察基于“筋-经-骨”理念的李氏推拿疗法治疗伴小关节紊乱的颈型颈椎病临床疗效。方法将70例伴小关节紊乱的颈型颈椎病患者按照随机数字表法分为2组,对照组35例予常规推拿治疗,治疗组35例予李氏推拿疗法治疗。2组均隔日治疗1次,治疗3周。比较2组治疗前后简化麦吉尔疼痛评分量表(SF-MPQ)评分、颈椎功能障碍指数量表(NDI)评分、颈椎曲度、匹兹堡睡眠质量指数量表(PSQI)评分。结果2组治疗后SF-MPQ疼痛视觉模拟评分(VAS)、疼痛分级指数(PRI)评分、现时疼痛程度(PPI)评分均较本组治疗前降低(P0.05)。2组治疗后PSQI评分均较本组治疗前降低(P<0.05),治疗后治疗组PSQI评分低于对照组(P<0.05)。结论基于“筋-经-骨”理念的李氏推拿疗法在减轻伴小关节紊乱的颈型颈椎病患者疼痛、改善颈椎功能障碍、改善睡眠质量方面优于常规推拿治疗,短期内对改善颈椎曲度无优势。

关键词：颈椎病推拿疗法

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Effects of cytokines and chemokines on migration of mesenchymal stem cells following spinal cord injury

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Neural Regeneration Research 2012年第14期7卷 1106-1112页

作者： Longyun Li Maoguang Yang Chunxin Wang Qiheng Zhao Jian Liu Chuanguo zhan Zhi Liu xuepeng Li Weihua Wang Xiaoyu Yang Department of Orthopedics China-Japan Friendship HospitalJilin UniversityChangchun 130033Jilin ProvinceChina

We investigated the effects of cytokines and chemokines and their associated signaling pathways on mesenchymal stem cell migration after spinal cord injury, to determine their roles in the curative effects of mesenchymal stem cells. This study reviewed the effects of tumor necrosis factor-α, vascular endothelial growth factor, hepatocyte growth factor, platelet-derived growth factor, basic fibroblast growth factor, insulin like growth factor-I, stromal cell-derived factor and monocyte chemoattractant protein-1, 3 during mesenchymal stem cell migration to damaged sites, and analyzed the signal transduction pathways involved in their effects on mesenchymal stem cell migration. The results confirmed that phosphatidylinositol 3-kinase/serine/threonine protein kinases and nuclear factor-KB play crucial roles in the migration of mesenchymal stem cells induced by cytokines and chemokines.

关键词： spinal cord injury mesenchymal stem cells migration cytokine chemokine signaling pathway neural regeneration

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