Flash memory based computing-in-memory system to solve partial differential equations

作     者：Yang FENG Fei WANG Xuepeng ZHAN Yuan LI Jiezhi CHEN Yang FENG;Fei WANG;Xuepeng ZHAN;Yuan LI;Jiezhi CHEN

作者机构：School of Information Science and EngineeringShandong University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2021年第64卷第6期

页      面：257-258页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 081202[工学-计算机软件与理论] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by China Key Research and Development Program (Grant No.2016YFA0201802) National Natural Science Foundation of China (Grant Nos. 91964105, 61874068) 

主　　题：Flash memory based computing in memory system to solve partial differential equations 

摘      要：Dear editor,Many emerging non-volatile memories(NVM), such as resistive random access memory(RRAM) [1], phase-change memory(PCM) [2], and ferroelectric RAM(FeR AM) [3],together with the conventional flash memory [4, 5], have demonstrated their good capabilities in many artificial neural networks.