A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

作     者：Yaning Wang Wanying Li Yimeng Guo Xin Huang Zhaoping Luo Shuhao Wu Hai Wang Jiezhi Chen Xiuyan Li Xuepeng Zhan Hanwen Wang Yaning Wang;Wanying Li;Yimeng Guo;Xin Huang;Zhaoping Luo;Shuhao Wu;Hai Wang;Jiezhi Chen;Xiuyan Li;Xuepeng Zhan;Hanwen Wang

作者机构：Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and EngineeringUniversity of Science and Technology of ChinaShenyang 110016China Department of Applied PhysicsAalto UniversityAaltoFinland School of Information Science and Engineering(ISE)Shandong UniversityQingdao 266237China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第128卷第33期

页      面：239-244页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.12104462 and 62104134) support from the China Postdoctoral Science Foundation(Grant No.2021M700154) support from the Young Scholars Program of Shandong University 

主　　题：van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing 

摘      要：Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a transistor,has been intensively studied in two-dimensional layered materials(2 DLM),which show potential for applications in such as neuromorphic ***,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and ***,those known 2 DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per *** now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains ***,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2 D ferroelectric materials CuInP_(2)S_(6)(CIPS)into a graphite/CuInP_(2)S_(6)/MoS_(2)vertical *** behaviour and multi-level resistance states were *** synaptic behaviours including excitatory postsynaptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully ***,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate *** findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.