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Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response

Frontiers of Optoelectronics 2023年第4期16卷 109-120页

作者： Biyuan Zheng xingxia sun Weihao Zheng Chenguang Zhu Chao Ma Anlian Pan Dong Li Shengman Li Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China College of Advanced Interdisciplinary Studies and Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China Wuhan National Laboratory for Optoelectronics(WNLO) Huazhong University of Science and Technology(HUST)Wuhan 430074China

Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and applications.The introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D materials.Here,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition method.Scanning transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)monolayers.This was also confrmed by Raman and X-ray photoelectron spectroscopy.Power-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission intensity.Carrier transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier transport.In addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were demonstrated.The V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications.

关键词： Atomic substitution.V-doped MoS_(2) Distinct B-exciton Broad spectral response

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Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors

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Nano Research 2023年第9期16卷 11832-11838页

作者： Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu xingxia sun Gengzhao Xu Biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong Yao Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Suzhou Institute of Nano-tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and optoelectronics.Two-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further applications.Here,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)FET.Moreover,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction interface.Electrical characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET device.The demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics.

关键词： heterojunction van der Waals epitaxial mobility Schottky barrier transistors

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Picosecond electrical response in graphene/MoTe_(2) heterojunction with high responsivity in the near infrared region

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Fundamental Research 2022年第3期2卷 405-411页

作者： Zhouxiaosong Zeng Kai Braun Cuihuan Ge Martin Eberle Chenguang Zhu xingxia sun Xin Yang Jiali Yi Delang Liang Yufan Wang Lanyu Huang Ziyu Luo Dong Li Anlian Pan Xiao Wang School of Physics and Electronics Hunan UniversityChangsha 410082China Institute of Physical and Theoretical Chemistry and LISA+ University of TübingenAuf der Morgenstelle 18Tübingen 72076Germany Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China

Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity.Devices based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse speed.However,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection performance.Here,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 GHz.Furthermore,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared region.Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.

关键词： Two-dimension material Graphene/MoTe_(2)heterojunction Near infrared photodetector Scanning photocurrent microscopy Time-resolved photocurrent

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Dual-channel type tunable field-effect transistors based on vertical bilayer WS2(1−x)Se2x/SnS2 heterostructures

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InfoMat 2020年第4期2卷 752-760页

作者： Biyuan Zheng Dong Li Chenguang Zhu Jianyue Lan xingxia sun Weihao Zheng Huawei Liu Xuehong Zhang Xiaoli Zhu Yexin Feng Tao Xu Litao sun Gengzhao Xu Xiao Wang Chao Ma Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangshaChina School of Physics and Electronics Hunan UniversityChangshaChina Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhouChina SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjingChina

Layered semiconductor heterostructures are essential elements in modern electronic and optoelectronic devices.Dynamically engineering the composition of these heterostructures may enable the flexible design of the properties of heterostructure-based electronics and optoelectronics as well as their optimization.Here,we report for the first time a two-step chemical vapor deposition approach for a series of WS2(1−x)Se2x/SnS2 vertical heterostructures with high-quality and large areas.The steady-state photoluminescence results exhibit an obvious composition-related quenching ratio,revealing a strong coherence between the band offset and the charge transfer efficiency at the junction interface.Based on the achieved heterostructures,dual-channel backgate field-effect transistors were successfully designed and exhibited typical composition-dependent transport behaviors,and pure n-type unipolar transistors to ambipolar transistors were realized in such systems.The direct vapor growth of these novel vertical WS2(1−x)Se2x/SnS2 heterostructures could offer an interesting system for probing new physical properties and provide a series of layered heterostructures for high-quality devices.

关键词： dual channel field-effect transistor heterostructure semiconductor alloy two-dimensional materials

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二维铁电半导体层级处理模块设计及低功耗高性能人工视觉系统应用

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Science Bulletin 2024年第4期69卷 473-482页

作者：吴广成向立王文强姚程栋颜泽毅张成吴家鑫刘勇郑弼元刘华伟胡城伟孙兴霞朱晨光王一喆熊雄吴燕庆高亮李东潘安练李晟曼 Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Hunan Institute of Advanced Sensing and Information Technology Xiangtan UniversityXiangtan 411105China School of Integrated Circuits Peking UniversityBeijing 100871China Wuhan National Laboratory for Optoelectronics(WNLO) Huazhong University of Science and Technology(HUST)Wuhan 430074China

The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and computation.In this study,we designed an a-phase indium selenide(a-In_(2)Se_(3))transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)functionalities.As an optic-neural synapse for low-level sensory processing,the a-In_(2)Se_(3)transistor exhibits a high photoresponsivity(2855 A/W)and detectivity(2.91×10^(14)Jones),facilitating efficient feature extraction.For high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50μs and ultralow energy consumption of 0.37 aJ/spike.An AI vision system using a-In_(2)Se_(3)transistors has been demonstrated.It achieved an impressive recognition accuracy of 92.63%within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities.This study demonstrates the potential of the a-In_(2)Se_(3)transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.

关键词： Two-dimensional ferroelectric semiconductor Processing-in-sensor Computing-in-memory Synaptic device Artificial-intelligence vision system

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Vindesine induces rhabdomyolysis in patients with acute lymphoblastic leukemia

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Chinese Medical Journal 2014年第21期127卷 3835-3836页

作者： Liu Limin sun Yumei Si Yejun Lin Guoqiang Zhang xingxia Zhao Guangsheng Zhang Yanming Wu Depei Department of Hematology Huai'an Hospital Affiliated to Xuzhou Medical College and Huai'an Second People's Hospital Huai'an Jiangsu 223002 China First Affiliated Hospital of Soochow University Jiangsu Institute of Hematology Key Laboratory of Thrombosis and Hemostasis of Ministry of Health Suzhou Jiangsu 215006 China

Rhabdomyolysis is a syndrome which involves myoglobin and other intracellular proteins and electrolytes that occurs from breakdown of skeletal muscleand leak into the circulation. The clinical symptoms of rhabdomyolysis include myalgia, tenderness on palpation, weakness, brown urine, fever, myoglobinuria, electrolyte imbalance, and acute renal failure. Rhabdomyolysis can be severe enough to be life threatening. The causes of rhabdomyolysis include alcohol, electrolyte imbalance （potassium, phosphorus, and magnesium depletion）, viral myositis, trauma, connective tissue diseases, drug reaction, toxication, exercise, metabolic diseases, seizures, and hereditary enzyme deficiencies. The exact mechanisms underlying rhabdomyolysis are not fully understood, but it is clear that muscle damage can be caused by direct muscle injury or metabolic inequalities between energy production and energy consumption.

关键词： vindesine acute lymphoblastic leukemia rhabdomyolysis

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水中磺胺类抗生素的光降解及富里酸对其光降解的影响

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中国科学技术大学学报 2013年第8期43卷 654-660页

作者：孙兴霞许毓中国科学技术大学化学系安徽合肥230026

磺胺类抗生素是水环境中广泛存在的抗菌药物,光化学降解是其消减的重要途径.通过对两种磺胺类抗生素磺胺二甲基嘧啶和磺胺甲噁唑的光化学降解动力学研究,考察了其在纯水中的自敏化光降解过程以及溶解性有机物富里酸对其光化学降解的影响... 详细信息

磺胺类抗生素是水环境中广泛存在的抗菌药物,光化学降解是其消减的重要途径.通过对两种磺胺类抗生素磺胺二甲基嘧啶和磺胺甲噁唑的光化学降解动力学研究,考察了其在纯水中的自敏化光降解过程以及溶解性有机物富里酸对其光化学降解的影响.结果表明,这两种磺胺类抗生素在纯水中的光化学降解反应均符合准一级动力学,但两者的自敏化光化学降解机理不同.水环境中富里酸浓度的大小会对其光化学降解产生重要影响:对于磺胺二甲基嘧啶,水中富里酸浓度较高(20,50,100mg/L)时会促进它的光降解,浓度较低时(2mg/L)不利于其光降解;对于磺胺甲噁唑,低浓度富里酸(0.2,2mg/L)会促进其光降解,高浓度富里酸(20,50,100mg/L)则抑制其光降解.

关键词：磺胺类抗生素紫外-可见光辐射自敏化光解富里酸

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硫酸解交联-考马斯亮蓝法测定医用交联透明质酸钠凝胶中蛋白质的含量

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理化检验（化学分册） 2022年第2期58卷 148-151页

作者：郭利娟刘爱娟孙兴霞刘叶陈方沈永山东省医疗器械和药品包装检验研究院济南250101 国家药品监督管理局生物材料器械安全性评价重点实验室济南250101 山东省医疗器械生物学评价重点实验室济南250101

医用交联透明质酸钠凝胶难溶于水,不能直接用福林酚法和考马斯亮蓝法等现行标准中的方法测定其中蛋白质含量,鉴于此,用硫酸溶液将医用交联透明质酸钠凝胶解交联后,比较了两种方法的检测效果。结果显示,交联透明质酸钠的降解产物(D-葡萄... 详细信息

医用交联透明质酸钠凝胶难溶于水,不能直接用福林酚法和考马斯亮蓝法等现行标准中的方法测定其中蛋白质含量,鉴于此,用硫酸溶液将医用交联透明质酸钠凝胶解交联后,比较了两种方法的检测效果。结果显示,交联透明质酸钠的降解产物(D-葡萄糖醛酸、N-乙酰基-D-葡萄糖酰胺),交联剂1,4-丁二醇二环氧甘油醚的水解产物和添加剂盐酸利多卡因等会严重影响福林酚法的测定结果,因此选择了考马斯亮蓝法。取医用交联透明质酸钠凝胶约0.5 g,按样品和解交联剂质量体积比2∶1(g∶mL)加入0.5 mol·L^(-1)硫酸溶液0.25 mL,密封后在沸水浴中加热10 min。加入与上述硫酸溶液等体积的1 mol·L^(-1)氢氧化钠溶液,混匀后加入0.10 g·L^(-1)考马斯亮蓝G-250溶液5.0 mL,放置10 min。以空白牛血清白蛋白标准溶液为参比,用紫外-可见分光光度计测量上述体系在595 nm处的吸光度,用牛血清白蛋白标准溶液系列制作标准曲线。结果显示,牛血清白蛋白的质量浓度在2.04~10.22 mg·L^(-1)内与其对应的吸光度呈线性关系,检出限(3.3s/k)为1.353 mg·L^(-1)。以阴性医用交联透明质酸钠凝胶为基质进行3个浓度水平的加标回收试验,回收率为99.3%~100%,测定值的相对标准偏差(n=6)为1.3%~3.5%。

关键词：解交联考马斯亮蓝法蛋白质医用交联透明质酸钠凝胶

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地图匹配技术及其在智能交通系统中的应用

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计算机工程与应用 2005年第20期41卷 225-228页

作者：孙棣华张星霞张志良重庆大学自动化学院重庆400044

地图匹配(Map Matching)技术利用电子地图和定位信息来确定车辆在道路上的准确位置,是一种软件纠错技术。该文在引入地图匹配问题的基础上,分析讨论了目前主要的地图匹配算法,并结合智能交通系统(ITS)的需求,探讨了车辆所在道路上具体... 详细信息

地图匹配(Map Matching)技术利用电子地图和定位信息来确定车辆在道路上的准确位置,是一种软件纠错技术。该文在引入地图匹配问题的基础上,分析讨论了目前主要的地图匹配算法,并结合智能交通系统(ITS)的需求,探讨了车辆所在道路上具体位置的识别方法,最后对地图匹配技术在ITS中的应用进行了回顾和展望。

关键词：地图匹配智能交通系统车辆定位全球定位系统

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高效液相色谱法测定一次性使用注射器中双酚A溶出量

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化学分析计量 2023年第3期32卷 79-83页

作者：孙兴霞郭利娟张丽莹杨婧沈永山东省医疗器械和药品包装检验研究院国家药品监督管理局生物材料器械安全性评价重点实验室山东省医疗器械生物学评价重点实验室济南250101

建立了一次性使用注射器中双酚A溶出量的高效液相色谱测定方法。取一次性使用注射器的外套部分,剪碎,以甲醇为替代溶剂,采用极限浸提的方式,评估一次性使用注射器中双酚A溶出量。浸提液经氮气浓缩至干,用甲醇复溶后,经0.2μm的PTFE滤膜... 详细信息

建立了一次性使用注射器中双酚A溶出量的高效液相色谱测定方法。取一次性使用注射器的外套部分,剪碎,以甲醇为替代溶剂,采用极限浸提的方式,评估一次性使用注射器中双酚A溶出量。浸提液经氮气浓缩至干,用甲醇复溶后,经0.2μm的PTFE滤膜过滤,以乙酸铵缓冲溶液(pH 4.0)-乙腈为流动相进行梯度洗脱,使用Waters BEH Shield RP18型色谱柱(150 mm×4.6 mm,3.5μm)分离,以荧光检测器检测。双酚A质量浓度在52.5~1 050.0 ng/mL范围内与色谱峰面积线性良好,线性相关系数为0.999 9。方法检出限为21.0 ng/mL,样品加标回收率为96.97%~101.12%,测定结果的相对标准偏差为0.99%~5.31%(n=6)。

关键词：一次性使用注射器双酚A 溶出量高效液相色谱法

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