Picosecond electrical response in graphene/MoTe_(2) heterojunction with high responsivity in the near infrared region
作者机构:School of Physics and ElectronicsHunan UniversityChangsha 410082China Institute of Physical and Theoretical Chemistry and LISA+University of TübingenAuf der Morgenstelle 18Tübingen 72076Germany Key Laboratory for Micro-Nano Physics and Technology of Hunan ProvinceCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China
出 版 物:《Fundamental Research》 (自然科学基础研究(英文版))
年 卷 期:2022年第2卷第3期
页 面:405-411页
学科分类:081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术]
基 金:This work was supported by the National Natural Science Foundation of China(Grants No.52022029,91850116,51772084,and U19A2090) the Sino-German Center for Research Promotion(Grant No.GZ1390) the Hunan Provincial Natural Science Foundation of China(Grants No.2018RS3051 and 2019XK2001)
主 题:Two-dimension material Graphene/MoTe_(2)heterojunction Near infrared photodetector Scanning photocurrent microscopy Time-resolved photocurrent
摘 要:Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high *** based on two-dimensional(2D)transition metal dichalcogenides can exhibit picosecond photoresponse ***,2D materials naturally have low absorption,and when increasing thickness to gain higher responsivity,the response time usually slows to nanoseconds,limiting their photodetection ***,by taking time-resolved photocurrent measurements,we demonstrated that graphene/MoTe_(2) van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction,which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd_(3)As_(2) and implies a photodetection bandwidth as wide as 100 ***,we found that an additional charge carrier transport channel provided by graphene can ef-fectively decrease the photocurrent recombination loss to the entire device,preserving a high responsivity in the near-infrared *** study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.