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Frontiers of Materials Science 2017年第1期11卷 51-58页

作者： Yalin jiang xiangping jiang Chao CHEN Yunjing CHEN Xingan jiang Na TU jiangxi Key Laboratory of Advanced Ceramic Materials Department of Material Science and Engineering Jingdezhen Ceramic Institute Jingdezhen 333001 China

Upconversion （UC） and electrical properties of Na0.5Bi8.5-xErxTi7O27 （NBT-BIT-xEr, 0.00≤x≤0.25） ceramics were studied. Structural analysis revealed that a single inter-growth structured phase exists in all samples and the Er3＋ ion substituting for Bi3＋ at the A-site increases the orthorhombic distortion. Under the 980 nm laser excitation, two characteristic green emission bands and one red emission band were situated at 527, 548 and 670 nm, corresponding to the transitions 2H11/2 → 4I15/2, 4S3/2 → 4I15/2 and 4F9/2 → 4I15/2, respectively. The optimal photoluminescence （PL） were found in the NBT-BIT-0.20Er sample, and the emission color transforms from green to yellowish green. Temperature dependence of fluorescence intensity ratio （FIR） for NBT-BIT-0.20Er was measured ranging from 290 to 440 K and its maximum sensitivity was calculated to be about 0.0020 K-1 at 290 K. Dielectric measurements indicated that Tc slightly increased simultaneously with the decrease of tanS. Therefore, this ceramic has potential applications for high-temperature multifunctional devices.

关键词： inter-growth structure photoluminescence (PL) electrical properties multifunctional materials

Effects of Cr2O3 doping on the microstructure and electrical properties of （Ba,Ca）（Zr,Ti）O3 lead-free ceramics

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Frontiers of Materials Science 2016年第2期10卷 203-210页

作者： Xiang XlA xiangping jiang Chao CHEN Xingan jiang Na TU Yunjing CHEN jiangxi Key Laboratory of Advanced Ceramic Materials School of Materials Science and Engineering Jingdezhen Ceramic Institute Jingdezhen 333001 China

Lead-free ceramics （Ba0.85Ca0.15）（Zr0.1Ti0.9）O3-x wt,%Cr2O3 （BCZT-xCr） were prepared via the conventional solid-state reaction method. The microstructure and electrical properties of BCZT-xCr samples were systematically studied. XRD and Raman results showed that all samples possessed a single phased perovskite structure and were close to the morphotropic phase boundary （MPB）. With the increase of the Cr content, the rhombohedral-tetragonal phase transition temperature （TR-T） increases slightly, and the Curie temperature （Tc） shifts towards the low temperature side. XPS analysis reveals that Cr3. and Cr5＊ ions co-existed in Cr-doped BCZT ceramics, indicating the different impact on the electrical properties from Cr ions as ＂acceptor＂ or ＂donor＂. For the x = 0.1 sample, relative high piezoelectric constants d33 （-316 pC/N） as well as high Qm （-554） and low tan6 （-0.8%） were obtained. In addition, the AC conductivity was also investigated. Hopping charge was considered as the main conduction mechanism at low temperature. As the temperature increases, small polarons and oxygen vacancies conduction played important roles.

关键词： lead-free ceramics electrical properties BCZT XPS analysis

Structural,electrical and photoluminescence properties of Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12 inter-growth ceramics

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Frontiers of Materials Science 2019年第1期13卷 99-106页

作者： Fang LIU xiangping jiang Chao CHEN Xin NIE Xiaokun HUANG Yunjing CHEN Hao HU Chunyang SU jiangxi Key Laboratory of Advaneed Ceramic Materials School of Materials Science and EngineeringJingdezhen Ceramic InstituteJingdezhen 333403China

Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12(SBT-BIT-xEr^3+,x=0.00,0.05,0.10,0.15 and 0.20)inter-growth ceramics were synthesized by the solid-state reaction ***,electrical and up-conversion properties of SBT-BIT-xEr^3+ were *** samples showed a single phase of the orthorhombic *** spectroscopy indicated that the Er^3+ substitution for Bi^3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr^3+ *** substitution of Bi^3+ by Er^3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation *** constant d33 was slightly improved,but dielectric constant was decreased with the Er^3+ *** SBT-BIT-xEr^3+ ceramic with x=0.15 exhibits the optimized electrical behavior(d33~17 pC/N,tanδ~0.83%).Moreover,two bright green(532 and 548 nm)and one red(670 nm)emission bands were observed under the 980 nm *** emission intensity was also obtained when x=0.15 for the SBT-BIT-xEr^3+ ***,this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.

关键词： inter-growth structure electrical property multifunctional optoelectronic material photoluminescence

PZN-PZT Piezoelectric Multilayer Actuator with Ag/Pd Electrodes

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Journal of Materials Science & Technology 2000年第4期16卷 421-423页

作者： xiangping jiang, Jun LIAO, Wangzhong ZHANG, Guorong LI, Daren CHEN and Qingrui YIN (Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,Shanghai 200050, China) Laboratory of Functional Inorganic Materials Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China

The PZN-PZT ceramic with high piezoelectric constant d33 sintered at 1130℃ was prepared. The PZN-PZT multilayer actuator (MLA) with Ag/Pd as an internal electrode was fabricated by tape casting.

关键词： Pd PZT Ag

Ce掺杂0.85Bi_4Ti_3O_(12)-0.15LiNbO_3铋层状铁电陶瓷的显微结构与性能(英文)

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硅酸盐学报 2014年第12期42卷 1501-1506页

作者：江向平杨帆陈超涂娜景德镇陶瓷学院材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇333001

采用固相法制备CeO2掺杂改性0.85Bi4Ti3O12-0.15LiNbO3(BTO-LN)铋层状压电陶瓷。借助于X射线衍射和扫描电子显微镜研究了CeO2掺量与BTO-LN陶瓷晶体结构和电性能的关系。结果表明:所有陶瓷样品均为单一的正交相结构;随CeO2掺量的增加,陶... 详细信息

采用固相法制备CeO2掺杂改性0.85Bi4Ti3O12-0.15LiNbO3(BTO-LN)铋层状压电陶瓷。借助于X射线衍射和扫描电子显微镜研究了CeO2掺量与BTO-LN陶瓷晶体结构和电性能的关系。结果表明:所有陶瓷样品均为单一的正交相结构;随CeO2掺量的增加,陶瓷的晶粒尺寸变大,Curie温度TC由653℃下降到617℃;CeO2掺杂提高了样品的压电性能,压电常数d33随CeO2掺量的增加先增大后减小,相对介电常数εr表现出相反的变化趋势;当CeO2的掺入量为0.75%时,样品的电性能最佳,即d33=25pC/N,机械品质因数Qm=2 895,介电损耗tanδ=0.10%,TC=617℃。

关键词：铋层状结构压电陶瓷微观结构钛酸铋铈掺杂改性

Ce掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3铋层状压电陶瓷结构与性能研究（英文）

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稀有金属材料与工程 2016年第2期45卷 292-296页

作者：涂娜江向平陈超傅小龙杨帆景德镇陶瓷学院江西省先进陶瓷材料重点实验室江西景德镇333001

采用传统固相法制备了CeO_2掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3(BTO-KNN)铋层状陶瓷材料。系统研究了CeO_2掺杂对BTO-KNN基陶瓷物相结构、微观结构以及电性能的影响。结果表明:所有陶瓷样品均为单一的铋层状结构:BTO-KNN基... 详细信息

采用传统固相法制备了CeO_2掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3(BTO-KNN)铋层状陶瓷材料。系统研究了CeO_2掺杂对BTO-KNN基陶瓷物相结构、微观结构以及电性能的影响。结果表明:所有陶瓷样品均为单一的铋层状结构:BTO-KNN基陶瓷的压电性能随着CeO_2的掺杂而显著提高,损耗明显降低。当CeO_2掺量为0.75%(质量分数)时,样品具有最佳的电性能:d_(33)=28 pC/N,介电损耗tanδ=0.29%,机械品质因数Q_m=2897,剩余极化强度P_r=11.83μC/cm^2,且居里温度T_c高达615℃;研究结果表明CeO_2掺杂0.9Bi_4Ti_3O_(12)-0.1K_(0.5)Na_(0.5)NbO_3铋层状陶瓷是一种潜在的高温陶瓷材料。

关键词：铋层状压电陶瓷微观结构 Bi4Ti3O12

Intermediate Temperature Sintering of La-Modified Ph(Zn_(1/3)Nb_(2/3))O_3-PbZrO_3-PbTiO_3 Piezoelectric Ceramics

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Journal of Materials Science & Technology 2001年第2期17卷 287-289页

作者： xiangping jiang, Jun LIAO, Xiaoyong WEI, Guorong LI, Daren CHEN and Qingrui YIN Laboratory of Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

in order to realize the co-firing with Ag/Pd electrodes in multilayer devices, Pb(Zn1/3Nb2/3)(1-x-y) ZrxTiyO3(0.25 详细信息

in order to realize the co-firing with Ag/Pd electrodes in multilayer devices, Pb(Zn1/3Nb2/3)(1-x-y) ZrxTiyO3(0.25

关键词： O3-PbZrO3-PbTiO3 Piezoelectric Ceramics Nb PZT La Zn

Nd^(3+)掺Na_(0.25)K_(0.25)Bi_(2.5)Nb_2O_9压电陶瓷的结构与性能

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硅酸盐学报 2017年第3期45卷 346-353页

作者：罗雨涵江向平陈超涂娜陈云婧江兴安景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇333001

采用固相法制备Na_(0.25)K_(0.25)Bi_(2.5–x)Nd_xNb_2O_9(NKBN–xNd^(3+),0≤x≤0.40,x为摩尔分数)铋层状无铅压电陶瓷,研究了不同Nd^(3+)掺杂量对NKBN–x Nd陶瓷显微结构、电学性能的影响及NKBN–0.20Nd^(3+)陶瓷高温下的电导行为。结果表明:所有样品均为单一的铋层状结构;当Nd^(3+)的掺杂量x为0.02时,样品的晶粒尺寸减小并趋于均匀,致密度提高;适量的Nd^(3+)掺杂能降低样品的介电损耗,提高NKBN陶瓷的压电常数d33。NKBN–0.20Nd^(3+)陶瓷样品的电学性能最佳:压电常数d_(33)=24 p C/N,机械品质因数Q_m=2 449,tanδ=0.40%,2P_r=1.11μC/cm^2。NKBN–0.20Nd^(3+)样品的阻抗谱表明:在高温区域陶瓷的晶粒对电传导起主要作用,当温度高于600℃时,样品主要表现为本征电导,NKBN–0.20Nd^(3+)和NKBN的电导活化能分别为1.85和1.64 e V。

关键词：铋层状压电陶瓷 Raman光谱阻抗谱

(1-x)K_(0.44)Na_(0.52)Li_(0.04)Nb_(0.86)Ta_(0.10)Sb_(0.04)O_(3-x)SrTiO_3无铅压电陶瓷性能研究

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稀有金属材料与工程 2008年第A1期37卷 363-366页

作者：刘利华江向平江福兰郑严艳景德镇陶瓷学院材料科学与工程学院江西景德镇333001

采用传统固相法对(1-x)K_(0.44)Na_(0.52)Li_(0.04)Nb_(0.86)Ta_(0.10)Sb_(0.04)O.3压电陶瓷进行了钛酸锶掺杂改性研究。使用XRD并结合常规压电陶瓷性能测试手段对该体系的显微结构、压电、介电性能等进行表征。研究结果表明,随着SrTiO_... 详细信息

采用传统固相法对(1-x)K_(0.44)Na_(0.52)Li_(0.04)Nb_(0.86)Ta_(0.10)Sb_(0.04)O.3压电陶瓷进行了钛酸锶掺杂改性研究。使用XRD并结合常规压电陶瓷性能测试手段对该体系的显微结构、压电、介电性能等进行表征。研究结果表明,随着SrTiO_3加入量的增大,材料的居里温度和压电性能逐渐下降,材料的介电温度峰形逐渐变宽,出现弛豫现象:陶瓷烧结性能改善,致密度增加。

关键词：无铅压电陶瓷压电性能介电性能

Ho^3+掺杂Na0.25K0.25Bi2.5Nb2O9陶瓷的结构、电学和上转换发光性能

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硅酸盐学报 2020年第7期48卷 1090-1096页

作者：陈子龙江向平陈超黄枭坤江兴安胡浩景德镇陶瓷大学材料科学与工程学院江西省先进陶瓷材料重点实验室江西景德镇333001

采用传统固相法制备了Na0.25K0.25Bi2.5–xHoxNb2O9(NKBN–x Ho^3+,0.000≤x≤0.030)铋层状陶瓷,研究了Ho^3+掺杂对NKBN陶瓷结构、电学和上转换发光性能的影响。X射线衍射谱表明Ho^3+进入NKBN晶格形成了固溶体。随着Ho^3+掺杂量的增加,N... 详细信息

采用传统固相法制备了Na0.25K0.25Bi2.5–xHoxNb2O9(NKBN–x Ho^3+,0.000≤x≤0.030)铋层状陶瓷,研究了Ho^3+掺杂对NKBN陶瓷结构、电学和上转换发光性能的影响。X射线衍射谱表明Ho^3+进入NKBN晶格形成了固溶体。随着Ho^3+掺杂量的增加,NKBN陶瓷的晶粒尺寸降低,当x=0.020时,样品的压电和铁电性能均达到最佳:d33=21.8pC/N2Pr=1.84μC/cm。(d33为压电常数,Pr为剩余极化强度)所有样品在400℃均未出现明显的退极化现象,在高温下表现出良好的压电稳定性。在980 nm激光激发下,所有陶瓷样品均表现出上转换荧光发光特性,表明NKBN–x Ho^3+陶瓷在光电多功能材料领域具有潜在的应用价值。随着极化电压的增加,陶瓷样品的晶格结构对称性提高,上转换荧光发光强度降低。

关键词：铋层状结构压电性能退极化上转换发光