Structural,electrical and photoluminescence properties of Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12 inter-growth ceramics

作     者：Fang LIU Xiangping JIANG Chao CHEN Xin NIE Xiaokun HUANG Yunjing CHEN Hao HU Chunyang SU 

作者机构：Jiangxi Key Laboratory of Advaneed Ceramic MaterialsSchool of Materials Science and EngineeringJingdezhen Ceramic InstituteJingdezhen 333403China 

出 版 物：《Frontiers of Materials Science》 (材料学前沿（英文版）)

年 卷 期：2019年第13卷第1期

页      面：99-106页

核心收录：

学科分类：08[工学] 

基　　金：the National Natural Science Foundation of China(Grant Nos.51562014,51602135,51862016,51762024 and 61671224) the Natural Science Foundation of Jiangxi Province(20171BAB216012) the Foundation of Jiangxi Provincial Education Department(GJJ170789,GJJ170794 and GJJ170804) 

主　　题：inter-growth structure electrical property multifunctional optoelectronic material photoluminescence 

摘      要：Er^3+-doped SrBi4Ti4O15-Bi4Ti3O12(SBT-BIT-xEr^3+,x=0.00,0.05,0.10,0.15 and 0.20)inter-growth ceramics were synthesized by the solid-state reaction ***,electrical and up-conversion properties of SBT-BIT-xEr^3+ were *** samples showed a single phase of the orthorhombic *** spectroscopy indicated that the Er^3+ substitution for Bi^3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr^3+ *** substitution of Bi^3+ by Er^3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation *** constant d33 was slightly improved,but dielectric constant was decreased with the Er^3+ *** SBT-BIT-xEr^3+ ceramic with x=0.15 exhibits the optimized electrical behavior(d33~17 pC/N,tanδ~0.83%).Moreover,two bright green(532 and 548 nm)and one red(670 nm)emission bands were observed under the 980 nm *** emission intensity was also obtained when x=0.15 for the SBT-BIT-xEr^3+ ***,this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.