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硅基/聚酰亚胺湿度敏感元件研究

黑龙江大学自然科学学报 2005年第6期22卷 822-825页

作者：万灵温殿忠白续铎唐祺肖艳玲黑龙江大学集成电路重点实验室黑龙江哈尔滨150080

硅基/聚酰亚胺湿度传感器是采用集成电路光刻工艺在硅衬底上制成了以PI材料为介质膜,以金、铝为电极的电容式湿度传感器。给出了聚酰亚胺(PI)材料的感湿机理,硅基/聚酰亚胺湿敏电容的结构,以及湿度传感器的制造工艺、湿敏特性、工作原... 详细信息

硅基/聚酰亚胺湿度传感器是采用集成电路光刻工艺在硅衬底上制成了以PI材料为介质膜,以金、铝为电极的电容式湿度传感器。给出了聚酰亚胺(PI)材料的感湿机理,硅基/聚酰亚胺湿敏电容的结构,以及湿度传感器的制造工艺、湿敏特性、工作原理及应用等。测试结果表明,在相对湿度为10%-90%RH范围内C-%RH曲线线性度良好。

关键词：硅基聚酰亚胺湿度传感器 IC工艺

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基于硅磁敏三极管空间磁场矢量传感器

黑龙江大学工程学报 2021年第3期12卷 70-75页

作者：柳微微赵晓锋温殿忠黑龙江大学电子工程学院哈尔滨150080

提出一种封装结构空间磁场矢量传感器,该传感器由芯片Ⅰ、芯片Ⅱ以及封装结构组成,其中芯片Ⅰ和Ⅱ均以硅磁敏三极管(SMST)作为磁敏感器件,芯片Ⅰ由4只SMST分别构成的第一和第二磁敏感单元,可分别实现对x方向、y方向外加磁场(Bx、By)的测... 详细信息

提出一种封装结构空间磁场矢量传感器,该传感器由芯片Ⅰ、芯片Ⅱ以及封装结构组成,其中芯片Ⅰ和Ⅱ均以硅磁敏三极管(SMST)作为磁敏感器件,芯片Ⅰ由4只SMST分别构成的第一和第二磁敏感单元,可分别实现对x方向、y方向外加磁场(Bx、By)的测量;芯片Ⅱ为2只SMST构成的第三磁敏感单元,能够实现对z方向外加磁场(Bz)的测量,理论分析表明,3个磁敏感单元分别完成Bx、By和Bz的测量。采用TCAD-ATLAS软件构建了空间磁场矢量传感器磁敏感单元结构仿真模型,分析了磁敏感特性。室温条件下,当VDD=5.0 V、IB=4.0 mA时,在Bx、By和Bz的作用下,3个磁敏感单元对应的磁灵敏度分别为71、63、79 mV/T,该传感器可完成空间磁场矢量(B)测量。

关键词：空间磁场矢量传感器磁敏感单元硅磁敏三极管磁灵敏度

Polarization-encoded neural networks with simplified grating patch

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Science China Technological Sciences 2025年

作者： Chengyan zhong Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang University Nanjing Mumusili Technology Co. LTD School of Integrated Circuits Tsinghua University Institute of Advanced Study School of Electronic Information and Electrical Engineering Chengdu University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of China

Optical neural networks (ONNs) offer a promising solution for high-performance, energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of light. However, the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical synapses. In this work, we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact ONNs. By tuning the polarization state of incident light, the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic weight. Our plasmonic structures, with features as small as 40 nm, operate well below this limit in the visible spectrum (400–750 nm). Compared with diffraction and interference-based circuit designs, our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold, respectively. Furthermore, we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10classes (CIFAR-10) dataset using a Visual Geometry Group network with 16 layers (VGG16) model. After training for 80epochs, the network achieves an accuracy of 93%. The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence (AI) accelerators and smart sensors.

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基于聚磁结构磁场传感器特性研究

黑龙江大学工程学报 2020年第4期11卷 52-60,96,F0002页

作者：赵晓锋宋灿柳微微温殿忠黑龙江大学电子工程学院哈尔滨150080

给出由硅磁敏三极管和两个聚磁结构构成的磁场传感器。聚磁结构为镍铁合金材料制作的梯形结构,可放大外加磁场,硅磁敏三极管能够实现外加磁场测量,聚磁结构改善了磁场传感器磁灵敏度特性。利用ANSYS有限元软件构建了聚磁结构仿真模型,... 详细信息

给出由硅磁敏三极管和两个聚磁结构构成的磁场传感器。聚磁结构为镍铁合金材料制作的梯形结构,可放大外加磁场,硅磁敏三极管能够实现外加磁场测量,聚磁结构改善了磁场传感器磁灵敏度特性。利用ANSYS有限元软件构建了聚磁结构仿真模型,研究了结构尺寸对聚磁性能的影响,在此基础上采用电火花技术制作了聚磁结构,同时采用MEMS技术在p型高阻单晶硅上设计、制作了磁敏三极管芯片,利用微电子封装工艺实现了磁敏三极管和聚磁结构的无磁化封装。当电源电压V DD=5.0 V、集电极负载电阻R L=2.3 kΩ、基极注入电流I b=8.0 mA时,在室温下且磁场范围为-80 mT^+80 mT,基于聚磁结构磁敏三极管磁灵敏度为926 mV/T。实验结果表明,聚磁结构提高了磁灵敏度约3.5倍。

关键词：磁场传感器硅磁敏三极管聚磁结构 MEMS技术

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电化学式氧传感器寿命模型

黑龙江大学工程学报 2015年第2期6卷 64-67,2页

作者：温殿忠赵晓锋祁欣周明军黑龙江大学敏感技术研究所哈尔滨150080 中国电子科技集团公司第四十九研究所哈尔滨150080

通过电化学式氧传感器试验测试,研究其寿命特征,在此基础上,分析电化学氧传感器失效规律,给出引起电化学式氧传感器失效的主要因素。研究结果为电化学式氧传感器失效分析提供了分析手段。

关键词：电化学式氧传感器寿命模型失效模型

Engineered Cancer Nanovaccines:A New Frontier in Cancer Therapy

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Nano-Micro Letters 2025年第2期17卷 134-168页

作者： Yijie Wang Congrui Liu Chao Fang Qiuxia Peng wen Qin Xuebing Yan Kun Zhang Central Laboratory and Department of Medical Ultrasound Sichuan Academy of Medical SciencesSichuan Provincial People’s HospitalSchool of MedicineUniversity of Electronic Science and Technology of ChinaNo.32West Second SectionFirst Ring RoadChengdu 610072People’s Republic of China Department of Stomatology and Central Laboratory School of MedicineShanghai Tenth People’s HospitalTongji UniversityNO.301 Yan‑Chang‑Zhong RoadShanghai 200072People’s Republic of China Jiangsu Provincial Innovation and Practice Base for Postdoctors Suining People’s HospitalAffiliated Hospital of Xuzhou Medical UniversityNo.2Bayi West RoadSuiningXu Zhou 221000Jiangsu ProvincePeople’s Republic of China

Vaccinations are essential for preventing and treating disease,especially cancer nanovaccines,which have gained considerable interest recently for their strong anti-tumor immune *** can prompt the immune system to generate antibodies and activate various immune cells,leading to a response against tumor tissues and reducing the negative effects and recurrence risks of traditional chemotherapy and *** enhance the flexibility and targeting of vaccines,nanovaccines utilize nanotechnology to encapsulate or carry antigens at the nanoscale level,enabling more controlled and precise drug delivery to enhance immune *** nanovaccines function by encapsulating tumor-specific antigens or tumor-associated antigens within *** small size of these nanomaterials allows for precise targeting of T cells,dendritic cells,or cancer cells,thereby eliciting a more potent anti-tumor *** this paper,we focus on the classification of carriers for cancer nanovaccines,the roles of different target cells,and clinically tested cancer nanovaccines,discussing strategies for effectively inducing cytotoxic T lymphocytes responses and optimizing antigen presentation,while also looking ahead to the translational challenges of moving from animal experiments to clinical trials.

关键词： Cancer nanovaccines Immunotherapy Nanobiotechnology Immune targets Signaling pathway

Coalescence-dominated microstructure evolution during solidification of 20SiMn steel

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Journal of Iron and Steel Research International 2020年第5期27卷 506-516页

作者： Xiao-ping Ma dian-zhong Li Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016LiaoningChina

The evolution of microstructures during the solidification of 20SiMn steel was *** dominant role of coalescence was revealed by analyzing the quenched microstructures and the solute *** the parameter range investigated,including the slow solidification,the fast solidification and the directional solidification,the coalescence can happen at multiple solidification stages and on *** the directional solidification,the ternary and fourth dendritic arms coalesce into the secondary dendritic arms,and the secondary dendritic arms further coalesce to produce the cellular *** cellular crystals become coarse through further *** the non-directional solidification,the initial microstructures are discrete crystals without the dendritic *** the dendritic arms and dendritic stems appearing in the later solidification stage are produced by the coalescence on *** coalescence is more significant in the later solidification *** mechanism of coalescence is attributed to different melt compositions in different local domains and the reduction of the interface energy.

关键词： Solidification Microstructure Coalescence Steel Microsegregation

基于MEMS技术MOSFETs硅桥结构磁传感器特性仿真与制作工艺

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黑龙江大学工程学报 2017年第3期8卷 50-55页

作者：赵晓锋邓祁金晨晨庄萃萃温殿忠黑龙江大学电子工程学院

给出一种MOSFETs硅桥结构磁传感器,在方形硅膜上表面的不同位置设计4个p-MOSFETs,沟道电阻构成惠斯通电桥结构,并在方形硅膜上表面中央位置制作铁磁材料。通过采用ANSYS有限元软件建立磁传感器仿真模型,仿真结果表明,外加磁场作用下,铁... 详细信息

给出一种MOSFETs硅桥结构磁传感器,在方形硅膜上表面的不同位置设计4个p-MOSFETs,沟道电阻构成惠斯通电桥结构,并在方形硅膜上表面中央位置制作铁磁材料。通过采用ANSYS有限元软件建立磁传感器仿真模型,仿真结果表明,外加磁场作用下,铁磁材料受到磁场力,使硅膜发生弹性形变,产生桥路输出电压,实现对外加磁场的检测。基于仿真结果,采用CMOS工艺和MEMS技术设计、制作MOSFETs硅桥结构磁传感器,实验结果表明,当工作电压为1.0 V时,满量程输出为0.69 mV,灵敏度为1.54 mV/T,准确度为3.76%F.S.。

关键词：硅桥结构 MOSFET 磁传感器 ANSYS仿真

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基于MEMS技术研制RF硅基微电感线圈

黑龙江大学工程学报 2010年第4期1卷 78-83页

作者：温殿忠潘择群杨子江张海燕冯昌浩黑龙江省电子工程重点实验室黑龙江大学哈尔滨150080 黑龙江大学集成电路重点实验室哈尔滨150080

在分析了硅基上金属线圈的串联电阻、金属层厚度等在低频和高频的情况下对Q的影响及原因的基础上,提出了一种在硅杯表面采用浓硼扩散区与镀金属膜形成的欧姆接触电极作为内引线的硅基电感的新制造方法。设计了硅基电感的版图尺寸和相关... 详细信息

在分析了硅基上金属线圈的串联电阻、金属层厚度等在低频和高频的情况下对Q的影响及原因的基础上,提出了一种在硅杯表面采用浓硼扩散区与镀金属膜形成的欧姆接触电极作为内引线的硅基电感的新制造方法。设计了硅基电感的版图尺寸和相关的工艺流程,用IntelliSuite软件模拟验证了工艺流程的可能性,再利用Ansys有限元软件中的电磁分析模块模拟了电流与磁感应强度的关系、衬底涡流分布等,为平面电感的理论与实验的进一步比较分析提供了参考依据。在研制过程中发现影响电感性能好坏的主要因素是衬底涡流效应,为此提出了在矩形硅杯膜上制作电感的方法,为了进一步减薄金属电感线圈衬底的厚度,在硅杯膜背面采用激光打孔得到了膜厚约为5μm的衬底,从而可以使衬底中的涡流大幅度减少、电感的Q值得到很大提高。此外,提出的新制造方法采用了绝缘性能比SiO2好的Al2O3薄膜作为电感线圈与衬底之间的绝缘层。结果表明,设计的平面螺旋电感具有制造工艺简单、与IC工艺相兼容的优点,有广泛的应用前景。

关键词： MEMS 浓硼扩散区内引线激光打孔硅基微电感