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Demonstration of synaptic and resistive switching characteristics in W/TiO_(2)/HfO_(2)/TaN memristor crossbar array for bioinspired neuromorphic computing

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Journal of Materials Science & Technology 2022年第1期96卷 94-102页

作者： Muhammad Ismail Umesh Chand Chandreswar Mahata Jamel Nebhen sungjun kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620South Korea Department of Electrical and Computer Engineering National University SingaporeSingapore 117583Singapore College of Computer Engineering and Sciences Prince Sattam bin Abdulaziz UniversityAl-Kharj 11942Saudi Arabia

In this study,resistive random-access memory(RRAM)-based crossbar arrays with a memristor W/TiO_(2)/HfO_(2)/TaN structure were fabricated through atomic layer deposition(ALD)to investigate synaptic plasticity and resistive switching(RS)characteristics for bioinspired neuromorphic computing.X-ray photoelectron spectroscopy(XPS)was employed to explore oxygen vacancy concentrations in bilayer TiO_(2)/HfO_(2)*** fitting for O1s peaks confirmed that the HfO_(2)layer contained a larger number of oxygen vacancies than the TiO_(2)*** addition,HfO_(2)had lower Gibbs free energy(ΔG°=-1010.8 kJ/mol)than the TiO_(2)layer(ΔG°=-924.0 kJ/mol),resulting in more oxygen vacancies in the HfO_(2)*** results andΔG°magnitudes confirmed that formation/disruption of oxygen-based conductive filaments took place in the TiO_(2)*** W/TiO_(2)/HfO_(2)/TaN memristive device exhibited excellent and repeatable RS characteristics,including superb 10^(3) dc switching cycles,outstanding 107 pulse endurance,and high-thermal stability(10^(4) s at 125℃)important for digital computing ***,some essential biological synaptic characteristics such as potentiation-depression plasticity,paired-pulse facilitation(PPF),and spike-timing-dependent plasticity(STDP,asymmetric Hebbian and asymmetric anti-Hebbian)were successfully mimicked herein using the crossbar-array memristive *** on experimental results,a migration and diffusion of oxygen vacancy based physical model is proposed to describe the synaptic plasticity and RS *** study demonstrates that the proposed W/TiO_(2)/HfO_(2)/TaN memristor crossbar-array has a significant potential for applications in non-volatile memory(NVM)and bioinspired neuromorphic systems.

关键词： Resistive switching Crossbar-array memristive device Synaptic plasticity TiO_(2)/HfO_(2)film Oxygen vacancy

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Optimizing the thickness of Ta_(2)O_(5) interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO_(2) switching layer for multilevel data storage

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Journal of Materials Science & Technology 2022年第11期106卷 98-107页

作者： Muhammad Ismail Haider Abbas Chandreswar Mahata Changhwan Choi sungjun kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620Republic of Korea Division of Materials Science and Engineering Hanyang UniversitySeoul 04763Republic of Korea

The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory *** this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and *** show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive ***,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance *** I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky *** can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting *** is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive *** results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier

关键词： Resistive switching Ta_(2)O_(5)/ZrO_(2)bilayer film Barrier layer thickness Multilevel resistance states RESET-stop voltage

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Flexible kesterite thin-film solar cells under stress

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npj Flexible Electronics 2022年第1期6卷 863-870页

作者： Ha Kyung Park Yunae Cho Juran kim Sammi kim sungjun kim Jeha kim Kee-Jeong Yang Dae-Hwan kim Jin-Kyu Kang William Jo Department of Physics Ewha Womans UniversitySeoul 03760Republic of Korea Division of Energy Technology Daegu Gyeongbuk Institute of Science and Technology(DGIST)Daegu 42988Republic of Korea Department of Solar&Energy Engineering Cheongju UniversityCheongju 28503Republic of Korea

Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat ***,we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4(CZTSSe)photovoltaic devices under mechanical *** efficient flexible CZTSSe devices were fabricated controlling the Na *** electronic structure of CZTSSe was deformed with stress as the band gap,valence band edge,and work function *** properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without *** local open-circuit voltage(VOC)on the bent CZTSSe surface decreased due to limited carrier *** reduction of local VOC occurred larger with convex bending than in concave bending,which is consistent with the degradation of device *** study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.

关键词： optoelectronic stress bending

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Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy based memristor with embedded TaN nanoparticles

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Journal of Materials Science & Technology 2021年第36期95卷 203-212页

作者： Chandreswar Mahata Hassan Algadi Muhammad Ismail Daewoong Kwon sungjun kim Division of Electronics and Electrical Engineering Dongguk UniversitySeoul 04620Republic of Korea Department of Electrical Engineering Faculty of EngineeringNajran UniversityP.O.Box 1988Najran 11001Saudi Arabia Department of Electrical Engineering Inha UniversityIncheonRepublic of Korea

Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles(TaN-NPs)and sandwiched between Al-doped HfO;layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM *** electron microscopy along with energy dispersive spectroscopy confirms the presence of TaN-NPs.X-ray photoelectron spectroscopy suggests that part of Ta N converted to tantalum oxynitride(TaO_(x)N_(y))which plays an important role in stable cycle-to-cycle resistive *** trapping and oxygen vacancy creation were found to be modified after the inclusion of Ta N-NPs inside RRAM ***,HfAlO/TaO_(x)N_(y)interface due to the presence TaN-NPs improves the device-to-device switching reliability by reducing the probability of random rupture/formation of conductive filaments(CFs).DC endurance of more than 10^(3)cycles and memory data retention up to 10^(4)s was achieved with an insignificant variation of different resistance *** conductance was attained by controlling RESET voltage with stable data retention in multiple *** volatile threshold switching was monitored after controlling the CF forming at 200 nA current compliance with high selectivity of~10^(3).Synaptic learning behavior has been demonstrated by spike-rate-dependent plasticity(SRDP).Reliable potentiation and depression processes were observed after the application of suitable negative and positive pulses which shows the capability of the TaN–NPs based RRAM device for transparent synaptic devices.

关键词： RRAM ALD TaN-nanoparticles Threshold switching Spike-rate-dependent plasticity Multilevel conductance Synaptic properties

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榆干离褶伞溶栓酶的纯化及酶学性质研究

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食品与发酵工业 2007年第8期33卷 45-47页

作者：沈明花金成俊延边大学医学部分子生物学实验室吉林延吉133000 韩国朝鲜大学校自然科学大学

采用离子交换层析、凝胶过滤层析及快速蛋白液相色谱等蛋白质分离纯化技术,从榆干离褶伞菌丝体中纯化一种溶栓酶,并探讨各种因子对榆干离褶伞溶栓酶活性的影响,观察溶栓酶对纤维蛋白及纤维蛋白原的水解特征和酰胺水解活性。实验结果表明... 详细信息

采用离子交换层析、凝胶过滤层析及快速蛋白液相色谱等蛋白质分离纯化技术,从榆干离褶伞菌丝体中纯化一种溶栓酶,并探讨各种因子对榆干离褶伞溶栓酶活性的影响,观察溶栓酶对纤维蛋白及纤维蛋白原的水解特征和酰胺水解活性。实验结果表明,其分子质量约为50 ku,该酶的最适pH和最适温度为pH 6.0,35℃,并对tPA底物S-2288最敏感。Mn^(2+)和Mg^(2+)激活酶活性,而Cu^(2+),EDTA对酶活有抑制作用。该酶不仅直接水解纤维蛋白,还可以水解纤维蛋白原。榆干离褶伞很有潜力成为治疗血栓的新的药物来源。

关键词：榆干离褶伞溶栓酶纯化溶栓活性

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0.2C-1.5Mn-1.5Si相变诱发塑性(TRIP)钢板在烤漆过程中的组织和力学性能变化

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金属热处理 2006年第1期31卷 66-68页

作者：王作成景财年衣颜宏张文平金成俊山东大学材料科学与工程学院山东济南250061 韩国机械材料研究所

本文系统地研究了0.2C-1.5Mn-1.5Si TR IP钢板在烤漆硬化处理过程中组织和力学性能的变化规律。结果表明,在烤漆过程中,TR IP钢板中处于亚稳态的残留奥氏体发生了贝氏体相变,经烤漆处理的TR IP钢板屈服强度提高,表现出一定程度的烤漆硬... 详细信息

本文系统地研究了0.2C-1.5Mn-1.5Si TR IP钢板在烤漆硬化处理过程中组织和力学性能的变化规律。结果表明,在烤漆过程中,TR IP钢板中处于亚稳态的残留奥氏体发生了贝氏体相变,经烤漆处理的TR IP钢板屈服强度提高,表现出一定程度的烤漆硬化性。

关键词：相变诱发塑性(TRIP)钢烤漆处理残留奥氏体贝氏体力学性能

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Technical Analysis of Exoskeleton Robot

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World Journal of Engineering and Technology 2019年第1期7卷 68-79页

作者： sungjun Yeem Jinyeong Heo Hongchul kim Yongjin Kwon Department of Industrial Engineering Ajou University Suwon South Korea The 5th R&D Institute Agency for Defense Development Daejeon South Korea

Recently, the need for exoskeleton robots has been increased due to the advancement of robotic technologies and changes in the concept of how the robots can be utilized in direct contact with human bodies. The robots, once only used on the factory floor, are now becoming a part of human bodies, which provides the unprecedented level of muscle power boost and the increase of running speed. If used very carefully, the exoskeleton robots can be also used for patients’ rehabilitation. The exoskeleton robots have many potential application areas;?hence most advanced countries are currently developing various types of exoskeleton robots. Those robots can be classified into two major categories, namely the rigid type and the soft type. Each type has own advantages and disadvantages, while the carrying load capacity and the actuation speed can be quite different. There are also many technical difficulties in order to use the exoskeleton robots in the field. The aim of this study is, therefore, to introduce the trends of exoskeleton robot development in advanced countries, while providing the analysis on the technical merits and downside of robot types. The comparison chart also indicates the major technical directions, in which the future technology will be headed for, such as the improved robot response characteristics by employing advanced sensors and artificial intelligence. The robots are becoming smarter, lighter, and more powerful. It is foreseeable that the wearable robots can be a part of human life in the very near future.

关键词： Exoskeleton Robot Wearable Robot Rigid Type Robot Soft Type Robot Artificial Muscle

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