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Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

Journal of Semiconductors 2013年第9期34卷 1-5页

作者： p.dalapati N.B.Manik A.N.Basu Condensed Matter physics Research Center Department of PhysicsJadavpur University

The influence of temperature on the intensity of light emitted by as well as the carrier life time r of a standard A1GaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay （OCVD） technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.

关键词： LED low temperature intensity ideality factor carrier lifetime

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Influence of temperature on tunneling-enhanced recombination in Si based p–i–n photodiodes

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Journal of Semiconductors 2014年第8期35卷 10-14页

作者： p.dalapati N.B.Manik A.N.Basu Condensed Matter physics Research Center Department of Physics Jadavpur University

We investigate the dominant dark current transport mechanism in Si based p-i-n photodiodes, namely, BpW 21R, SFH 205FA and BpX 61 photodiodes in the temperature range of 350 to 139 K. The forward current- voltage characteristics of these photodiodes are explained via the tunneling enhanced recombination model, which gives a quantitative description of the electronic mechanism in the p-i-n junction photodiodes. The observed tem- perature dependence of the saturation current and the diode ideality factor of these devices agree well with theo- retical predictions; the analysis also indicates the importance of doping for enhancement of tunneling. The present study will be helpful in applying the devices at low temperature ambience.

关键词： photodiode low temperature ideality factor reverse saturation current tunneling energy

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Funneling current in Si-doped infrared n type-GaAs heterostructures emitter

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Frontiers of Optoelectronics 2014年第4期7卷 501-508页

作者： pradip.dalapati Nabin Baran MANIK Asok Nath BASU Condensed Matter physics Research Center Department of Physics Jadavpur University Kolkata 700032 India

In the present work, we measured the forward bias current-voltage （I-V） characteristics of Si-doped n type gallium arsenide （GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of - exp（- αEg ＋ βeV） where the parameters α and β varied indistinctively with temperature and voltage tunneling current on the The dependence of forward temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.

关键词： infrared emitter tunneling characteristic energy band gap thermal stress

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