Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

作     者：P.Dalapati N.B.Manik A.N.Basu 

作者机构：Condensed Matter Physics Research CenterDepartment of PhysicsJadavpur University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2013年第34卷第9期

页      面：1-5页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：the Defence Research Development Organization(DRDO) India 

主　　题：LED low temperature intensity ideality factor carrier lifetime 

摘      要：The influence of temperature on the intensity of light emitted by as well as the carrier life time r of a standard A1GaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay （OCVD） technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.