Funneling current in Si-doped infrared n type-GaAs heterostructures emitter

作     者：Pradip DALAPATI Nabin Baran MANIK Asok Nath BASU 

作者机构：Condensed Matter Physics Research Center Department of Physics Jadavpur University Kolkata 700032 India 

出 版 物：《Frontiers of Optoelectronics》 (光电子前沿（英文版）)

年 卷 期：2014年第7卷第4期

页      面：501-508页

核心收录：

学科分类：0810[工学-信息与通信工程] 080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 081001[工学-通信与信息系统] 

主　　题：infrared emitter tunneling characteristic energy band gap thermal stress 

摘      要：In the present work, we measured the forward bias current-voltage （I-V） characteristics of Si-doped n type gallium arsenide （GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of - exp（- αEg ＋ βeV） where the parameters α and β varied indistinctively with temperature and voltage tunneling current on the The dependence of forward temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.