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Research on fabrication and properties of nanoporous gaN epilayers

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Rare Metals 2006年第Z2期25卷 5-10页

作者： nouet gérard RUTERANA Pierre Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces UMR CNRS 6176 ENSICAEN6 Boulevard du Maréchal Juin 14050 Caen Cedex France

gallium nitride (gaN) epilayers with nanopore arrays were fabricated by inductive coupled plasma (ICP) etching using anodic aluminum oxide (AAO) as mask. Nanoporous AAO templates were formed by anodizing the Al films deposited on gaN epilayers. The diameter of the perforations in the AAO masks could be easily controlled by tuning the technique parameters of AAO fabrication process. Cl2/Ar and Cl2/He were employed as etching gas. Scanning electron microscopy (SEM) analysis shows that vertical nanoporous arrays with uniform distribution can directly be transferred from AAO masks to gaN films in some proper conditions. Photoluminescence (PL) spectra, X-ray diffraction (XRD) and Raman spectroscopy were applied to assess properties of the nanoporous gaN films with different average pore diameters and interpore distances.

关键词： nanoporous gaN ICP etching

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growth of high-quality thick gaN using a tungsten interlayer

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Rare Metals 2006年第Z2期25卷 11-14页

作者： nouet gérard RUTERANA Pierre Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces UMR CNRS 6176 ENSICAEN 6 Boulevard du Maréchal Juin 14050 Caen Cedex France

A high-quality gaN film was (W-gaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor deposition (MOCVD) gaN templates with a tungsten (W) interlayer. A sample without interlayer was also grown at the same time for comparison. Significant reductions of dislocation density in W-gaN film is confirmed by the result of high-resolution X-ray diffraction and transmission electron microscope (TEM) observation. The improvement of optical properties of the W-gaN is confirmed by photoluminescence (PL) result. A shift of PL peak suggests that the strain is lower in the W-gaN than the film without W interlayer. This technique offers a potential path to obtain high-quality gaN film as free-standing substrate.

关键词： gaN tungsten interlayer HVPE HRXRD

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Atomic core structure of 90°c■bent screw threading dislocations in wurtzite gaN

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Rare Metals 2006年第S2期25卷 1-4页

作者： BELABBAS Imad RUTERANA Pierre nouet gérard Laboratoire Structure des Interfaces et Fonctionnalité des Couches Minces UMR CNRS 6176 Ecole Nationale Supérieure d′Ingénieurs de Caen 6 Bld du Maréchal Juin 14050 Caen cedex France

The atomic and electronic structures of the c threading dislocations with an edge or screw character were compared using a tight binding formalism which takes into account charge transfer. The two dislocations do not exhibit dangling bonds. While the screw dislocation contains only constrained ga-N bonds, the edge dislocation contains ga-ga and N-N wrong bonds. Both dislocations are found to induce shallow and deep gap states.

关键词： gaN dislocations SCC-DFTB

iPSC-derived cranial neural crest-like cells can replicate dental pulp tissue with the aid of angiogenic hydrogel

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Bioactive Materials 2022年第8期7卷 290-301页

作者： Yoshifumi Kobayashi Julie nouet Erdenechimeg Baljinnyam Zain Siddiqui Daniel HFine Diego Fraidenraich Vivek A.Kumar Emi Shimizu Department of Oral Biology Rutgers School of Dental MedicineNewarkNJ07103USA Department of Cell Biology and Molecular Medicine Rutgers New Jersey Medical SchoolNewarkNJ07103USA Department of Biomedical Engineering New Jersey Institute of TechnologyNewarkNJ07102USA

The dental pulp has irreplaceable roles in maintaining healthy teeth and its regeneration is a primary aim of regenerative *** study aimed to replicate the characteristics of dental pulp tissue by using cranial neural crest(CNC)-like cells(CNCLCs);these cells were generated by modifying several steps of a previously established method for deriving NC-like cells from induced pluripotent stem cells(iPSCs).CNC is the anterior region of the neural crest in vertebrate embryos,which contains the primordium of dental pulp cells or *** produced CNCLCs showed approximately 2.5-12,000-fold upregulations of major CNC marker ***,the CNCLCs exhibited remarkable odontoblastic differentiation ability,especially when treated with a combination of the fibroblast growth factors(FgFs)FgF4 and *** FgFs induced odontoblast marker genes by 1.7-5.0-fold,as compared to bone morphogenetic protein 4(BMP4)*** a mouse subcutaneous implant model,the CNCLCs briefly fated with FgF4+FgF9 replicated dental pulp tissue characteristics,such as harboring odontoblast-like cells,a dentin-like layer,and vast neovascularization,induced by the angiogenic self-assembling peptide hydrogel(SAPH),*** acts as a versatile biocompatible scaffold in the canal *** study demonstrated a successful collaboration between regenerative medicine and SAPH technology.

关键词： Regenerative endodontics iPSC Cranial neural crest Fibroblast growth factor Odontoblastic differentiation Angiogenic self-assembling peptide hydrogel

Atomistic Simulation of Undissociated 60°Basal Dislocation in Wurtzite gaN.

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Modeling and Numerical Simulation of Material Science 2013年第4期3卷 11-16页

作者： I.Belabbas J.Chen Ph.Komninou g.nouet groupe de Cristallographie et de Simulation des Matériaux Laboratoire de Physico-Chimie des Matériaux et Catalyse.Universite Abderrahmane MiraBejaia(06000)Algérie CIMAP UMR6252 CNRS-CEA-ENSICAEN-Universite de Caen Basse-Normandie14032France Department of Physics Aristotle University of ThessalonikiGR-54124 ThessalonikiGreece Centre de Recherche sur les Ions les Matériaux et la Photonique6 Boulevard du Maréchal Juin14050 Caen cedexFrance

We have carried out computer atomistic simulations, based on an efficient density functional based tight binding method, to investigate the core configurations of the 60°basal dislocation in gaN wurtzite. Our energetic calculations, on the undissociated dislocation, demonstrate that the glide configuration with N polarity is the most energetically favorable over both the glide and the shuffle sets.

关键词： gallium Nitride 60°Basal Dislocation Core Structure Energy Tight-binding SCC-DFTB

InN Stillinger-Weber参数:用于Inxga1-xN合金

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Journal of Semiconductors 2007年第Z1期28卷 12-15页

作者：雷华平蒋寻涯于广辉 Chen J Petit S Ruterana P nouet g 薄膜界面结构和功能实验室(SIFCOM) 国家科研中心混合实验室UMR CNRS 6176Caen 14050法国中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海200050 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室上海200050 CAEN大学ALENCON技术学院新材料性能研究室Damigny61250法国薄膜界面结构和功能实验室(SIFCOM) 国家科研中心混合实验室UMR CNRS 6176Caen14050法国

使用Stillinger-Weber(SW)类型经典势,研究了Inxga1-xN合金的原子结构以及富铟Clusters引起的IngaN/gaN量子阱的形变.SW参数来自氮化铟晶体常数和闪锌矿及铅锌矿结构中的弹性常数.还给出了含有富铟团簇的量子阱的能量.

关键词：氮化铟 SW参数 IngaN量子阱富铟团簇

主动脉CT血管成像对脊柱血管畸形血管结构可视化的性能评估

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国际医学放射学杂志 2016年第6期 707-707页

作者： F.Claren?on F.D.Maria N.A.Sourour J.gabrieli A.nouet E.Shotar 房坤 Department of Interventional Neuroradiology Pitié-Salpêtrière Hospital

摘要目的通过直接向主动脉注射对比剂进行CT血管成像,评价其对脊髓血管畸形成像的性能。方法对13例疑似脊髓血管畸形病人(男8例,女5例,平均年龄56岁),经

关键词：血管成像对比剂直接注射主动脉大动脉血管结构可视化 CT