Effect of AlN intermediate layer on growing GaN film by hydride vapor phase epitaxy

作     者：NOUET Gérard2 RUTERANA Pierre 

作者机构：Laboratoire Structures des Interfaces et Fonctionnalité des Couches Minces UMR CNRS 6176 ENSICAEN6 Boulevard du Maréchal Juin 14050 Caen Cedex France 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2006年第25卷第Z2期

页      面：15-19页

核心收录：

学科分类：0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：The work was financially supported by the National High Technology Research and Development Program of China(No.2002AA305304) the CNRS/ASC2005:Project18152 Natural Science Foundation Project(05ZR14139)and International Cooperation Project(055207043) of ShanghaiGovernment and Project ofthe National Natural Science Foundation ofChina(No.O62GJA1001) 

主　　题：GaN AlN intermediate layer HVPE HRXRD AFM photoluminescence 

摘      要：Thick GaN layer deposited by hydride vapor phase epitaxy (HVPE) on a metalorganic chemical vapor deposition (MOCVD) GaN template with a thin low temperature (LT) AlN intermediate layer was investigated. High resolution X-ray resolution diffraction (HRXRD) shows that the crystalline quality of thick GaN layer was improved compared with the template. As confirmed by atomic force microscopy (AFM) observations, the surface morphology of AlN intermediate layer helps to improve the nucleation of GaN epilayer. Photoluminescence (PL) spectra measurement shows its high optical quality and low compressive stress, and micro Raman measurement confirms the latter result. Thus, the deposition of the LT-AlN interlayer has promoted the growth of an HVPE-GaN layer with an excellent crystalline quality.