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Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

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Journal of Semiconductors 2018年第8期39卷 57-61页

作者： meixin feng Qian Sun Jianping Liu Zengcheng Li Yu Zhou Hongwei Gao Shuming Zhang Hui Yang Key Laboratory of Nano-Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Sciences School of Nano Technology and Nano Bionics University of Science and Technology of China

c-plane GaN-based blue laser diodes（LDs） were fabricated with Al-free cladding layers（CLs） and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern（FFP） of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.

关键词： Al-free cladding layers far-field beam patterns aspect ratio laser diodes

Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet

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Chinese Science Bulletin 2014年第16期59卷 1903-1906页

作者： Chang Zeng Shuming Zhang Jianping Liu Deyao Li Desheng Jiang meixin feng Zengcheng Li Kun Zhou feng Wang Huaibing Wang Hui Wang Hui Yang Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of Sciences State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences

We have fabricated InGaN-based superluminescent diodes(SLDs)with one-sided oblique *** characteristics of the SLDs and laser diodes with the same cavity length(800 lm)were *** typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 lm cavity *** characteristics of the SLDs with different cavity length were also demonstrated in a comparative *** is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation *** lasing threshold current turns out to be higher for the shorter SLD(S-SLD)(400 lm),but the output light intensity of the longer SLD(800 lm)is higher than that of the S-SLD under the same current *** gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/*** increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.

关键词： InGaN 辐射发光半导体激光增益饱和特征腔面管片电流密度

Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

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Journal of Semiconductors 2018年第4期39卷 39-43页

作者： Zengcheng LI Bo feng Biao Deng Legong Liu Yingnan Huang meixin feng Yu Zhou Hanmin Zhao Qian Sun Huaibing Wang Xiaoli Yang Hui Yang Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China Lattice Power (Changzhou) Corporation Changzhou 213164 China Lattice Power (Jiangxi) Corporation Nanchang 330029 China Beijing Advanced Materials Development Center Beijing 100083 China

This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells （MQWs） into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED （TF-LED） and the conventional lateral structure LED （LS-LED）. After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si （111） epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.

关键词： via thin film LED structure GaN-on-Si light-emitting diode light extraction

A wireless, implantable optoelectrochemical probe for optogenetic stimulation and dopamine detection

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Microsystems & Nanoengineering 2020年第1期6卷 590-601页

作者： Changbo Liu Yu Zhao Xue Cai Yang Xie Taoyi Wang Dali Cheng Lizhu Li Rongfeng Li Yuping Deng He Ding Guoqing Lv Guanlei Zhao Lei Liu Guisheng Zou meixin feng Qian Sun Lan Yin Xing Sheng School of Materials Science and Engineering and Hangzhou Innovation Institute Beihang UniversityBeijing 100191China Department of Electronic Engineering Beijing National Research Center for Information Science and Technology and IDG/McGovern Institute for Brain ResearchTsinghua UniversityBeijing 100084China Department of Physics Tsinghua UniversityBeijing 100084China Beijing Institute of Collaborative Innovation Beijing 100094China School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China Beijing Engineering Research Center of Mixed Reality and Advanced Display School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China Department of Mechanical Engineering Tsinghua UniversityBeijing 100084China Key Laboratory of Nano-devices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China

Physical and chemical technologies have been continuously progressing advances in neuroscience *** development of research tools for closed-loop control and monitoring neural activities in behaving animals is highly *** this paper,we introduce a wirelessly operated,miniaturized microprobe system for optical interrogation and neurochemical sensing in the deep *** epitaxial liftoff and transfer printing,microscale light-emitting diodes(micro-LEDs)as light sources and poly(3,4-ethylenedioxythiophene)polystyrene sulfonate(PEDOT:PSS)-coated diamond films as electrochemical sensors are vertically assembled to form implantable optoelectrochemical probes for real-time optogenetic stimulation and dopamine detection capabilities.A customized,lightweight circuit module is employed for untethered,remote signal control,and data *** the probe is injected into the ventral tegmental area(VTA)of freely behaving mice,in vivo experiments clearly demonstrate the utilities of the multifunctional optoelectrochemical microprobe system for optogenetic interference of place preferences and detection of dopamine *** presented options for material and device integrations provide a practical route to simultaneous optical control and electrochemical sensing of complex nervous systems.

关键词： electrochemical microprobe printing

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

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Light(Science & Applications) 2018年第1期7卷 904-910页

作者： Yi Sun Kun Zhou meixin feng Zengcheng Li Yu Zhou Qian Sun Jianping Liu Liqun Zhang Deyao Li Xiaojuan Sun Dabing Li Shuming Zhang Masao Ikeda Hui Yang Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026China Accelink Technologies Co. LtdWuhan 430205China State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics(CIOMP)CASChangchun 130033China

Current laser-based display and lighting applications are invariably using blue laser diodes(LDs)grown on freestanding GaN substrates,which are costly and smaller in size compared with other substrate materials.1–3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride(InGaN/GaN)multiple quantum well(MQW)structure can substantially reduce the cost of blue LDs and boost their *** obtain a high crystalline quality crack-free GaN thin film on Si for the subsequent growth of a blue laser structure,a hand-shaking structure was formed by inserting Al-composition step down-graded AlN/AlxGa1−xN buffer layers between GaN and Si *** degradation in InGaN/GaN blue MQWs was successfully suppressed with indium-rich clusters eliminated by introducing hydrogen during the growth of GaN quantum barriers(QBs)and lowering the growth temperature for the p-type AlGaN/GaN superlattice optical cladding layer.A continuous-wave(CW)electrically pumped InGaN/GaN quantum well(QW)blue(450 nm)LD grown on Si was successfully demonstrated at room temperature(RT)with a threshold current density of 7.8 kA/cm^(2).

关键词： pumped quantum wave

GaN-based ultraviolet microdisk laser diode grown on Si

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Photonics Research 2019年第6期7卷 I0034-I0037页

作者： JIN WANG meixin feng RUI ZHOU QIAN SUN JIANXUN LIU YINGNAN HUANG YU ZHOU HONGWEI GAO XINHE ZHENG MASAO IKEDA HUI YANG Key Laboratory of Nano-Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China University of Science and Technology Beijing Beijing 100083 China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesNanchang 330200 China School of Nano Technology and Nano Bionics University of Science and Technology of ChinaHefei 230026 China

This work reports a demonstration of electrically injected GaN-based near-ultraviolet microdisk laser diodes with a lasing wavelength of 386.3 nm at room temperature. The crack-free laser structure was epitaxially grown on Si substrates using an Al-composed down-graded Al N/AlGaN multilayer buffer to mitigate the mismatches in the lattice constant and coefficient of thermal expansion, and processed into “sandwich-like” microdisk structures with a radius of 12 μm. Air-bridge electrodes were successfully fabricated to enable the device electrical characterization. The electrically pumped lasing of the as-fabricated microdisk laser diodes was evidenced by the rapid narrowing down of electroluminescence spectra and dramatic increase in the light output power, as the current exceeded the threshold of 248 mA.

关键词： laser diode ultraviolet

中国西南地区某大型三甲综合医院脓毒症住院患者的流行病学分析

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中华危重病急救医学 2024年第6期36卷 574-577页

作者：付晶张瑞鹏许美馨王新张洋冯璇璘常莉四川省医学科学院·四川省人民医院(电子科技大学附属医院)急诊医学科成都610072 成都市金牛区人民医院(四川省人民医院金牛医院)ICU 成都610036 四川省医学科学院·四川省人民医院(电子科技大学附属医院)急诊医学与灾难医学研究所成都610072

目的分析中国西南地区某大型三甲综合医院2年间脓毒症住院患者的流行病学特点,探讨脓毒症死亡相关危险因素。方法采用回顾性研究方法,选择2021年9月1日至2023年8月31日就诊于四川省人民医院并住院治疗的脓毒症患者。收集患者的性别、年... 详细信息

目的分析中国西南地区某大型三甲综合医院2年间脓毒症住院患者的流行病学特点,探讨脓毒症死亡相关危险因素。方法采用回顾性研究方法,选择2021年9月1日至2023年8月31日就诊于四川省人民医院并住院治疗的脓毒症患者。收集患者的性别、年龄、出院诊断、出院科室、住院费用、住院时间及住院期间的预后;比较住院期间不同预后两组患者的临床特征资料;采用多因素Logistic回归分析脓毒症患者发生住院死亡事件的危险因素。结果共纳入3568例脓毒症患者,中位年龄58(35,74)岁,男性2147例(占60.17%),中位住院时间13(8,24)d,中位住院费用3.98(1.87,8.83)万元。2年间脓毒症病例数超100例的住院科室分别为中心重症监护病房(ICU)、儿科、肾内科、急诊内科、急诊重症监护病房(EICU)、感染科、呼吸内科、血液内科、新生儿监护室和急诊外科,其中ICU(包括中心ICU和EICU)患者1210例(占33.91%)。ICU患者住院费用较高〔6.7(3.1,15.5)万元〕,住院时间较长〔9(3,17)d〕,病死率较高〔35.29%(427/1210)〕。3568例脓毒症患者中,住院期间死亡448例,存活3120例。死亡组脓毒症患者的年龄、男性比例和住院费用均明显高于生存组〔年龄(岁):75(60,86)比57(30,71),男性比例:67.86%(304/448)比59.07%(1843/3120),住院费用(万元):6.7(3.0,16.9)比3.7(1.8,8.1)〕,合并糖尿病比例明显低于生存组〔4.91%(22/448)比10.45%(326/3120)〕,住院时间明显短于生存组〔d:10.0(3.0,19.0)比13.0(8.0,24.0)〕,差异均有统计学意义(均P<0.01)。多因素Logistic回归分析显示,男性〔优势比(OR)=0.75,95%可信区间(95%CI)为0.59~0.96〕、高龄(OR=1.04,95%CI为1.03~1.05)及合并糖尿病(OR=0.32,95%CI为0.19~0.54)是脓毒症患者发生住院死亡事件的独立危险因素(均P<0.05)。结论中国西南地区脓毒症疾病负担较重,尤其是ICU患者病死率高、住院费用高,患者及社会的经济负担重。男性、高龄及合并糖尿病是脓毒症患者发生住院死亡事件的独立危险因素。

关键词：西南地区脓毒症流行病学死亡风险

CRISPR/Cas9 therapeutics:progress and prospects

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Signal Transduction and Targeted Therapy 2023年第2期8卷 558-580页

作者： Tianxiang Li Yanyan Yang Hongzhao Qi Weigang Cui Lin Zhang Xiuxiu Fu Xiangqin He meixin Liu Pei-feng Li Tao Yu Institute for Translational Medicine The Affiliated Hospital of Qingdao UniversityNo.38 Dengzhou Road266021QingdaoPeople’s Republic of China Department of Immunology School of Basic MedicineQingdao University266021QingdaoPeople’s Republic of China Department of Cardiology People’s Hospital of RizhaoNo.126 Taian Road276827RizhaoPeople’s Republic of China Department of Microbiology Linyi Center for Disease Control and Prevention276000LinyiPeople’s Republic of China Department of Cardiac Ultrasound The Affiliated Hospital of Qingdao University266000QingdaoPeople’s Republic of China

Clustered regularly interspaced short palindromic repeats(CRISPR)/CRISPR-associated protein 9(Cas9)gene-editing technology is the ideal tool of the future for treating diseases by permanently correcting deleterious base mutations or disrupting disease-causing genes with great precision and efficiency.A variety of efficient Cas9 variants and derivatives have been developed to cope with the complex genomic changes that occur during ***,strategies to effectively deliver the CRISPR system to diseased cells in vivo are currently lacking,and nonviral vectors with target recognition functions may be the focus of future *** and physiological changes resulting from disease onset are expected to serve as identifying factors for targeted delivery or targets for gene *** are both varied and complex,and the choice of appropriate gene-editing methods and delivery vectors for different diseases is ***,there are still many potential challenges identified when targeting delivery of CRISPR/Cas9 technology for disease *** paper reviews the current developments in three aspects,namely,gene-editing type,delivery vector,and disease ***,this paper summarizes successful examples of clinical trials and finally describes possible problems associated with current CRISPR applications.

关键词： CRISPR/Cas9 editing delivery

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兔儿风属植物化学成分及药理作用研究进展

中华中医药学刊 2024年第2期42卷 142-163页

作者：高苑吕燕慧徐希科辛佳芸杨美欣林恬恬陈佳齐行睿冯玉祖先鹏山东中医药大学药学院山东济南250355 海军军医大学药学院上海200433 海军军医大学基础医学院上海200433

目的对兔儿风属Ainsliaea植物的化学成分及其药理作用进行综述,以期为研究兔儿风属的化学成分并根据其药理作用为相关的新型药物提供思路与启发。方法对近40年来大量国内外相关文献进行搜索与分析,并进行归纳整理与综述。结果兔儿风属... 详细信息

目的对兔儿风属Ainsliaea植物的化学成分及其药理作用进行综述,以期为研究兔儿风属的化学成分并根据其药理作用为相关的新型药物提供思路与启发。方法对近40年来大量国内外相关文献进行搜索与分析,并进行归纳整理与综述。结果兔儿风属植物具有多种活性成分,该属植物化学成分主要包括倍半萜类、三萜类与甾体类化合物及其衍生物、酚酸类、黄酮类、蒽醌类、香豆素类、木脂素类、挥发油类等成分,其中倍半萜类成分主要包括愈创木烷型、吉玛烷型、桉叶烷型、多聚体倍半萜内酯等倍半萜类成分。此外,兔儿风属植物具有多种药理作用,主要涉及抗菌作用、抗炎作用、抗肿瘤作用、抗肥胖作用等方面。结论兔儿风属植物药用历史悠久,具有多种化学成分与药理活性。目前的研究局限于兔儿风属植物的几个种,对兔儿风属植物质量控制的研究相对较少,可以考虑对该属的其他种植物进行相应的研究并综合研究成果规范该属植物质量控制的标准。现有的文献多局限于针对单一化合物在体内外活性机制的分析,对于其他种类化合物发挥药理作用及其机制的研究不够深入,有待进一步探索。

关键词：兔儿风属倍半萜类抗菌抗炎抗肿瘤

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