Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure

作     者：Zengcheng LI Bo Feng Biao Deng Legong Liu Yingnan Huang Meixin Feng Yu Zhou Hanmin Zhao Qian Sun Huaibing Wang Xiaoli Yang Hui Yang 

作者机构：Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China Lattice Power (Changzhou) Corporation Changzhou 213164 China Lattice Power (Jiangxi) Corporation Nanchang 330029 China Beijing Advanced Materials Development Center Beijing 100083 China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第4期

页      面：39-43页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Project supported by the National Key R&D Program(Nos.2016YFB0400100,2016YFB0400104) the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230) the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014) the Science and Technology Service Network Initiative of the Chinese Academy of Sciences the Key R&D Program of Jiangsu Province(No.BE2017079) the Natural Science Foundation of Jiangsu Province(No.BK20160401) the China Postdoctoral Science Foundation(No.2016M591944) supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01) the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07) the Seed Fund from SINANO,CAS(No.Y5AAQ51001) 

主　　题：via thin film LED structure GaN-on-Si light-emitting diode light extraction 

摘      要：This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells （MQWs） into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED （TF-LED） and the conventional lateral structure LED （LS-LED）. After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si （111） epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.