Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

作     者：Meixin Feng Qian Sun Jianping Liu Zengcheng Li Yu Zhou Hongwei Gao Shuming Zhang Hui Yang 

作者机构：Key Laboratory of Nano-Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Sciences School of Nano Technology and Nano Bionics University of Science and Technology of China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第8期

页      面：57-61页

核心收录：

学科分类：080901[工学-物理电子学] 070207[理学-光学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the National Key R&D Program(Nos.2017YFB0403100,2017YFB0403101) the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230) the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014) the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Key R&D Program of Jiangsu Province(No.BE2017079) the Natural Science Foundation of Jiangsu Province(No.BK20160401) the China Postdoctoral Science Foundation(No.2016M591944) supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01) the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07) the Seed Fund from SINANO,CAS(No.Y5AAQ51001) supported technically by Nano Fabrication Facility,Platform for Characterization&Test,Nano-X of SINANO,CAS 

主　　题：Al-free cladding layers far-field beam patterns aspect ratio laser diodes 

摘      要：c-plane GaN-based blue laser diodes（LDs） were fabricated with Al-free cladding layers（CLs） and deepened etching depth of mesa structure, so the aspect ratio of the far-field pattern（FFP） of the laser beam can be reduced to as low as 1.7, which is nearly the same as conventional AlGa In P-based red LDs. By using GaN CLs,the radiation angle of the laser beam θ⊥ is only 10.1° in the direction perpendicular to the junction plane. After forming a deeply etched mesa, the beam divergence angle parallel to the junction plane of FFP, θ;, increases from4.9° to 5.8°. After using the modified structure, the operation voltage of LD is effectively reduced by 2 V at an injection current of 50 mA, but the threshold current value increases. The etching damage may be one of the main reasons responsible for the increase of the threshold current.