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Frontiers of Optoelectronics 2022年第1期15卷 143-155页

作者： Galina Georgieva Christian Mai Pascal M.Seiler Anna Peczek lars zimmermann Hochfrequenztechnik-Photonik/Siliziumphotonik Technische Universität BerlinStraße des 17.Juni 13510623 BerlinGermany IHP-Leibnitz Institut für innovative Mikroelektronik Im Technologiepark 2515236 Frankfurt(Oder)Germany IHP Solutions GmbH Im Technologiepark 715236 Frankfurt(Oder)Germany

In this paper,we report on polarization combining two-dimensional grating couplers(2D GCs)on amorphous Si:H,fabricated in the backend of line of a photonic BiCMOS *** 2D GCs can be used as an interface of a hybrid silicon photonic coherent transmitter,which can be implemented on bulk Si *** fabricated 2D GCs operate in the telecom C-band and show an experimental coupling efficiency of−5 dB with a wafer variation of±1.2 *** for efficiency enhancement and improved performance stability in future design generations are outlined and extension toward O-band devices is also investigated.

关键词： Hybrid integration Photonic BiCMOS Amorphous silicon Two-dimensional grating coupler(2D GC) Dual-polarization coherent communication Silicon photonics

Influence of dynamic power dissipation on Si MRM modulation characteristics

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Chinese Optics Letters 2017年第7期15卷 42-45页

作者： Byung-Min Yu Myungjin Shin Min-Hyeong Kim lars zimmermann Woo-Young Choi Department of Electrical and Electronic Engineering Yonsei University Innovations for High Performance Microelectronics (IHP)

We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.

关键词： dissipation modulator quantitatively heating Figure thick electrically fabrication photonics buried

Single-chip Si optical single-sideband modulator

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Photonics Research 2018年第1期9卷 6-11页

作者： BYUNG-MIN Yu JEONG-MIN LEE CHRISTIAN MAI STEFAN LISCHKE lars zimmermann AND Woo-YOUNG CHOI Department of Electrical and Electronic Engineering Yonsei University 50 Yonsei-Ro Seodaemoon-gu Seoul 120-749 South Korea IHP Im Technologiepark 25 15236 Frankfurt (Oder) Germany

We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GHz opearation, and their operations are verified by measurement. The Si OSSB modulator successfully generates a single sideband with larger than 15 dB suppression of the undesired sideband.

关键词：硅光单边带平行双环形调制器正交混合耦合器通讯技术

Silicon electronic-photonic integrated 25 Gb/s ring modulator transmitter with a built-in temperature controller

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Photonics Research 2021年第4期9卷 507-513页

作者： Minkyu Kim Min-Hyeong Kim Youngkwan Jo Hyun-Kyu Kim Stefan Lischke Christian Mai lars zimmermann Woo-Young Choi Department of Electrical and Electronic Engineering Yonsei University03722 SeoulRepublic of Korea Samsung Electronics Hwasung18448 Gyeonggi-doRepublic of Korea IHP Im Technologiepark 2515236 Frankfurt(Oder)Germany Technische Universität Berlin Einsteinufer 2510587 BerlinGermany

We demonstrate a silicon electronic–photonic integrated 25 Gb/s nonreturn-to-zero transmitter that includes driver circuits,depletion-type Si ring modulator,Ge photodetector,temperature sensor,on-chip heater,and temperature controller,all monolithically integrated on a 0.25μm photonic BiCMOS technology *** integrated transmitter successfully provides stable and optimal 25 Gb/s modulation characteristics against external temperature fluctuation.

关键词： Gb/s modulator BiCMOS

Toward coherent O-band data center interconnects

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Frontiers of Optoelectronics 2021年第4期14卷 414-425页

作者： Pascal M.SEILER Galina GEORGIEVA Georg WINZER Anna PECZEK Karsten VOIGT Stefan LISCHKE Adel FATEMI lars zimmermann Technische Universität Berlin Chair of SiliziumphotonikBerlin 10623Germany IHP–Leibniz-Institut für innovative Mikroelektronik Frankfurt(Oder)15236Germany Technische Universität Berlin Chair of Hochfrequenztechnik-PhotonikBerlin 10623Germany IHP Solutions GmbH Frankfurt(Oder)15236Germany

Upcoming generations of coherent intra/inter data center interconnects currently lack a clear path toward a reduction of cost and power consumption,which are the driving factors for these data *** this work,the tradeoffs associated with a transition from coherent C-band to O-band silicon photonics are addressed and *** discussion includes the fundamental components of coherent data links,namely the optical components,fiber link and *** a major component of these links,a monolithic silicon photonic BiCMOS O-band coherent receiver is evaluated for its potential performance and compared to an analogous C-band device.

关键词： coherent communication data center O-band silicon photonics

Large-signal SPICE model for depletion-type silicon ring modulators

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Photonics Research 2019年第9期7卷 948-954页

作者： MINKYU KIM MYUNGJIN SHIN MIN-HYEONG KIM BYUNG-MIN YU YOUNGHYUN KIM YOOJIN BAN STEFAN LISCHKE CHRISTIAN MAI lars zimmermann WOO-YOUNG CHOI Department of Electrical and Electronic Engineering Yonsei University03722SeoulSouth Korea Now at University of Michigan Ann Arbor48109MichiganUSA Now at Samsung Electronics Hwasung18448Gyeonggi-doSouth Korea Now at IMEC Kapeldreef753001LeuvenBelgium IHP Im Technologiepark2515236Frankfurt(Oder)Germany

We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.

关键词： RM Block Large-signal SPICE model for depletion-type silicon ring modulators

Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode[Invited]

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Photonics Research 2018年第5期6卷 I0048-I0054页

作者： FRANCESCO DA Ros ANDRZEJ GAJDA ERIK LIEBIG EDSON P.DA SILVA ANNA PECZEK PETER D.GIROUARD ANDREAS MAI KLAUS PETERMANN lars zimmermann MICHAEL GALILI LEIF K.OXENLOWE DTU Fotonik Technical University of DenmarkDK-2800 Kongens LyngbyDenmark IHP Im Technologiepark 2515236 Frankfurt(Oder)Germany IHP Solutions GmbH Im Technologiepark 2515236 Frankfurt(Oder)Germany Institut for Hochfrequenz-und Halbleiter-Systemtechnologien TU BerlinEinsteinufer 2510587 BerlinGermany AMETEK CTS Europe GmbH L unener StraBe 211-21259174 KamenGermany

A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation(QAM) signals at 16 GBd is demonstrated with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence(≤0.5 dB) and the high conversion efficiency(CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due to the reverse-biased p-i-n diode are key in ensuring high CE levels.

关键词： Invited Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode QAM