Large-signal SPICE model for depletion-type silicon ring modulators
Large-signal SPICE model for depletion-type silicon ring modulators作者机构:Department of Electrical and Electronic EngineeringYonsei University03722SeoulSouth Korea Now at University of MichiganAnn Arbor48109MichiganUSA Now at Samsung ElectronicsHwasung18448Gyeonggi-doSouth Korea Now at IMECKapeldreef753001LeuvenBelgium IHPIm Technologiepark2515236Frankfurt(Oder)Germany
出 版 物:《Photonics Research》 (光子学研究(英文版))
年 卷 期:2019年第7卷第9期
页 面:948-954页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 080902[工学-电路与系统] 08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:Ministry of Trade,Industry and Energy(MOTIE)(10065666) Yonsei University(Research Scholarship Grants) IC Design Education Center(IDEC)
主 题:RM Block Large-signal SPICE model for depletion-type silicon ring modulators
摘 要:We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.