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Design of 512-bit logic process-based single poly EEPROM IP

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Journal of Central South University 2011年第6期18卷 2036-2044页

作者：金丽妍 JANG Ji-Hye 余忆宁 HA Pan-Bong kim young-hee Department of Electronic Engineering Changwon National University

A single poly EEPROM cell circuit sharing the deep N-well of a cell array was designed using the logic process. The proposed cell is written by the FN tunneling scheme and the cell size is 41.26 μm2, about 37% smaller than the conventional cell. Also, a small-area and low-power 512-bit EEPROM IP was designed using the proposed cells which was used for a 900 MHz passive UHF RFID tag chip. To secure the operation of the cell proposed with 3.3 V devices and the reliability of the used devices, an EEPROM core circuit and a DC-DC converter were proposed. Simulation results for the designed EEPROM IP based on the 0.18μm logic process show that the power consumptions in read mode, program mode and erase mode are 11.82, 25.15, and 24.08 ~tW, respectively, and the EEPROM size is 0.12 mm2.

关键词： single poly EEPROM cell Fowler-Nordheim tunneling logic process radio frequency identification small area

Design of an 8 bit differential paired eFuse OTP memory IP reducing sensing resistance

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Journal of Central South University 2012年第1期19卷 168-173页

作者： JANG Ji-Hye 金丽妍 JEON Hwang-Gon kim Kwang-Il HA Pan-Bong kim young-hee Department of Electronic Engineering Changwon National University9 Sarim-DongChangwon 641-773Korea

For the conventional single-ended eFuse cell, sensing failures can occur due to a variation of a post-program eFuse resistance during the data retention time and a relatively high program resistance of several kilo ohms. A differential paired eFuse cell is designed which is about half the size smaller in sensing resistance of a programmed eFuse link than the conventional single-ended eFuse cell. Also, a sensing circuit of sense amplifier is proposed, based on D flip-flop structure to implement a simple sensing circuit. Furthermore, a sensing margin test circuit is proposed with variable pull-up loads out of consideration for resistance variation of a programmed eFuse. When an 8 bit eFuse OTP IP is designed with 0.18 ~tm standard CMOS logic of TSMC, the layout dimensions are 229.04 μm ×100.15μm. All the chips function successfully when 20 test chips are tested with a program voltage of 4.2 V.

关键词： eFuse differential paired efuse cell one time programmable memory sensing resistance D flip-flop based sense amplifier

Design of 256 bit single-poly MTP memory based on BCD process

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Journal of Central South University 2012年第12期19卷 3460-3467页

作者： kim Kwang-il kim Min-sung PARK young-bae PARK Mu-hun HA Pan-bong kim young-hee Department of Electronic Engineering Changwon National University9 Sarim-DongChangwon 641-773Korea

We propose a single-poly MTP （multi-time programmable） cell consisting of one capacitor and two transistors based on MagnaChip＇s BCD process. The area of a unit cell is 37.743 75μm^2. The proposed single-poly MTP cell is erased and programmed by the FN tunnelling scheme. We design a 256 bit MTP memory for PMICs （power management ICs） using the proposed single-poly MTP cells. For small-area designs, we propose a selection circuit between V10V and VSV, and a WL （word-line） driver by simplifying its logic circuit. We reduce the total layout area by using pumped internal node voltages from a seven-stage cross-coupled charge pump for V10V （=10 V） and V5V （=5 V） without any additional charge pumps. The layout size of the designed 256 bit MTP memory is 618.250 μm × 437.425μm.

关键词： multi-time programmable memory PMIC cross-coupled charge pump

Design of small-area and high-efficiency DC-DC converter for 1 T SRAM

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Journal of Central South University 2012年第2期19卷 417-423页

作者： LEE Jae-hyung 金丽妍余忆宁 JANG Ji-hye kim Kwang-il HA Pan-bong kim young-hee Department of Electronic Engineering Changwon National University9 Sarim-Dong

The direct current-direct current （DC-DC） converter is designed for 1 T static random access memory （SRAM） used in display driver integrated circuits （ICs）, which consists of positive word-line voltage （VpwL）, negative word-line voltage （VinyL） and half-VDD voltage （VHDo） generator. To generate a process voltage temperature （PVT）-insensitive VpWL and VNWL, a set of circuits were proposed to generate reference voltages using bandgap reference current generators for respective voltage level detectors. Also, a VOWL regulator and a VNWL charge pump were proposed for a small-area and low-power design. The proposed VpwL regulator can provide a large driving current with a small area since it regulates an input voltage （VCI） from 2.5 to 3.3 V. The VmvL charge pump can be implemented as a high-efficiency circuit with a small area and low power since it can transfer pumped charges to VNWL node entirely. The DC-DC converter for 1 T SRAM were designed with 0.11 μm mixed signal process and operated well with satisfactory measurement results.

关键词： 1 T-static random access memory direct current-direct current converter positive word-line voltage negative word-line voltage half- VDb generator

Design of 32 kbit one-time programmable memory for microcontroller units

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Journal of Central South University 2012年第12期19卷 3475-3483页

作者： JEON Hwang-gon CHOI In-hwa HA Pan-bong kim young-hee Department of Electronic Engineering Changwon National University9 Sarim-DongChangwon 641-773Korea

A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was *** OTP memory is used for program and data *** is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by *** use 5V transistors on column data paths to reduce the area of column data paths since they require small *** addition,we secure device reliability by using HV(high-voltage)transistors in the WL ***,we change from a static logic to a dynamic logic used for the WL driver in the core ***,we optimize the WD(write data)switch ***,we can implement them with a small-area *** addition,we implement the address predecoder with a small-area logic *** area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.

关键词： one-time programmable memory micro controller unit EEPROM tunnel oxide small-area

Postmortem ^(7)Li NMR analysis for assessing the reversibility of lithium metal electrodes in lithium metal batteries

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Journal of Energy Chemistry 2024年第7期94卷 430-440页

作者： Jaewon Baek Sunha kim hee-Tak kim Oc hee Han Department of Chemical&Biomolecular Engineering KAISTDaejeon 34141Republic of Korea Metropolitan Seoul Center Korea Basic Science InstituteSeoul 03759Republic of Korea Graduate School of Analytical Science&Technology Chungnam National UniversityDaejeon 34134Republic of Korea

Despite the proficiency of lithium(Li)-7 NMR spectroscopy in delineating the physical and chemical states of Li metal electrodes,challenges in specimen preparation and interpretation impede its *** this study,we conducted a comprehensive postmortem analysis utilizing ^(7)Li NMR,employing a stan-dard magic angle spinning probe to examine protective-layer coated Li metal electrodes and LiAg alloy electrodes against bare Li metal electrodes within Li metal batteries(LMBs).Our investigation explores the effects of sample burrs,alignment with the magnetic field,the existence of liquid electrolytes,and precycling on the ^(7)Li NMR *** contrasting NMR spectra before and after cycling,we identi-fied alterations in Li^(0) and Li^(+) signals attributable to the degradation of the Li metal *** NMR analyses decisively demonstrate the efficacy of the protective layer in mitigating dendrite and solid elec-trolyte interphase ***,we noted that Li*ions near the Li metal surface exhibit magnetic susceptibility anisotropy,revealing a novel approach to studying diamagnetic species on Li metal elec-trodes in *** study provides valuable insights and practical guidelines for characterizing distinct lithium states within LMBs.

关键词： NMR spectroscopy Lithium-7 Lithium metal battery Electrolyte Electrode-protective layer Solid electrolyte interface Magnetic susceptibility anisotropy Lithium-metal NMR signal Diamagnetic^(7)Li NMR signal

Design of 32-bit differential paired eFuse OTP memory in a form of two-dimensional array

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Journal of Central South University 2012年第12期19卷 3484-3491页

作者： kim Yoon-kyu JANG Ji-hye YOON Geon-soo LEE Dong-hoon HA Man-yeong HA Pan-bong kim young-hee Department of Electronic Engineering Changwon National University9 Sarim-DongChangwon 641-773Korea

A differential paired eFuse OTP(one-time programmable)memory cell which can be configured into a 2D(two-dimensional)eFuse cell array was *** sensible resistance of a programmed eFuse link is a half smaller than that of the single-ended counterpart and BL datum can be sensed without a reference *** this 2D array of differential paired eFuse OTP memory cells,we design a 32-bit eFuse OTP memory *** use a sense amplifier based D F/F circuit as the BL(bit-line)SA(sense amplifier)and design a sensing margin test circuit with a variable pull-up *** is confirmed by the function test that the designed 32-bit OTP memory IP functions normally on 30 sample dies.

关键词： eFuse one-time programmable memory 2-dimensional array

Primary Ewing sarcoma of the kidney mimicking cystic papillary renal cell carcinoma in an older patient:A case repor

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World Journal of Clinical Cases 2024年第15期12卷 2606-2613页

作者： Suhong kim Jongsoo Park young Hwii Ko hee Jung Kwon Department of Radiology Yeungnam UniversityDaegu 42415South Korea Department of Urology Yeungnam UniversityDaegu 42415South Korea Department of Pathology Yeungnam UniversityDaegu 42415South Korea

BACKGROUND Ewing’s sarcoma(ES)is a neuroectodermal tumor that typically occurs in the bones and soft tissues of children and young *** renal ES is rare;only a few cases and a small case series have been documented,and only four cases involved primary renal ES in older people(>65 years old).CASE SUMMARY Herein,we describe the radiological and pathological features of primary renal ES in an older person.A 76-year-old man complained of poor oral intake and was found to have a large cystic renal mass with indistinct margins on computed ***-guided biopsy revealed that the tumor contained small round blue *** patient underwent a right radical *** tumor cells showed diffuse membranous CD99,and nuclear friend leukemia integration 1 transcription factor and NK2 Homeobox *** in situ hybridization revealed EWSR1 ***,18F-fluorodeoxyglucose positron emission tomography revealed no evidence of *** patient was diagnosed with primary renal *** months following the surgery,local recurrence and distant metastasis were *** renal ES is rare and often lethal in older *** specific imaging findings are unknown,and treatment protocols have not been *** This case report describes the radiological and pathological features of primary renal ES in an older person.

关键词： Ewing sarcoma Elder Renal Kidney Neuroectodermal Case report

Insights into the changes in the surface properties of goethite with Ni in the lattice in the presence of salicylhydroxamic acid:Experimental and density functional theory studies

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International Journal of Minerals,Metallurgy and Materials 2024年第4期31卷 665-677页

作者： Levie Mweene Gilsang Hong hee-Eun Jeong hee-won Kang Hyunjung kim Department of Earth Resources and Environmental Engineering Hanyang University222 Wangsimni-roSeongdong-guSeoul 04763Republic of Korea

Comparative experiments and theoretical analysis of the surface chemistry changes of goethite(GT)and goethite containing Ni(GTN)in the lattice in the presence of salicylhydroxamic acid(SA)were *** was revealed that in the presence of 100 g·t^(-1)of SA,the flotation recovery of GTN and GT increased with increasing pH,achieving a maximum recovery of 98.9%for both minerals at p H 8.3 and decreasing beyond that pH,with GTN having a slightly higher recovery than GT,except at pH *** was further confirmed by the higher complexation energies of GTN···SA(-883.87 kJ·mol^(-1))compared with GT···SA(-604.23 kJ·mol^(-1))resulting from covalent,closed-shell,and conventional hydrogen *** higher adsorption of SA onto GTN relative to GT was due to the formation of aπ-hole in GTN,thereby promoting a higher interaction of the collector with the ***,the presence of Ni in the GT lattice improves and decreases the adsorption and desorption of SA onto and from the mineral,respectively,compared with those onto and from GT.

关键词： nickel goethite adsorption salicylhydroxamic acid recovery