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Linewidth narrowing in self-injection-locked on-chip lasers

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Light(Science & Applications) 2023年第10期12卷 2074-2083页

作者： emad Alkhazraji Weng W.Chow Frédéric Grillot john e.bowers Yating Wan Integrated Photonics Lab King Abdullah University of Science and TechnologyThuwal 23955Saudi Arabia Sandia National Laboratories AlbuquerqueNM 87185-1086USA LTCI Télécom ParisInstitut Polytechnique de Paris91120 PalaiseauFrance Department of electronic and Computer engineering University of California-Santa BarbaraSanta BarbaraCA 93106USA

Stable laser emission with narrow linewidth is of critical importance in many applications,including coherent communications,LIDAR,and remote *** this work,the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity *** integrated III–V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum *** intrinsic differences are associated with gain saturation and carrier-induced refractive index,which are directly connected with 0-and 2-dimensional carrier densities of *** from parametric studies are presented for tradeoffs involved with tailoring the linewidth,output power,and injection current for different device *** both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities,the former emits at a higher optical power in the self-injection-locked state,while the latter is more ***,a multi-objective optimization analysis is provided to optimize the operation and design *** the quantum-well laser,minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output *** the quantum-dot laser,increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold *** findings serve to guide more detailed parametric studies to produce timely results for engineering design.

关键词： narrowing injection quantum

Silicon nitride passive and active photonic integrated circuits:trends and prospects

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Photonics Research 2022年第6期10卷 I0001-I0015页

作者： CHAO XIANG WARReN JIN john e.bowers Department of electrical and Computer engineering University of CaliforniaSanta BarbaraSanta BarbaraCalifornia 93106USA

The use of silicon nitride in integrated photonics has rapidly progressed in recent ***-low-loss waveguides based on silicon nitride are a favorable platform for the research of nonlinear and microwave photonics and their application to a wide variety of fields,including precision metrology,communications,sensing,imaging,navigation,computation,and quantum *** recent years,the integration of Si and Ⅲ-Ⅴ materials has enabled new large-scale,advanced silicon nitride-based photonic integrated circuits with versatile *** this perspective article,we review current trends and the state-of-the-art in silicon nitride-based photonic devices and *** highlight the hybrid and heterogeneous integration of Ⅲ-Ⅴ with silicon nitride for electrically pumped soliton microcomb generation and ultra-low-noise lasers with fundamental linewidths in the tens of m Hz *** also discuss several ultimate limits and challenges of silicon nitride-based photonic device performance and provide routes and prospects for future development.

关键词： passive pumped nitride

Broadband quantum-dot frequency-modulated comb laser

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Light(Science & Applications) 2023年第8期12卷 1696-1707页

作者： Bozhang Dong Mario Dumont Osama Terra Heming Wang Andrew Netherton john e.bowers Institute for energy efficiency University of CaliforniaSanta BarbaraCAUSA Department of electrical and Computer engineering University of CaliforniaSanta BarbaraCAUSA Primary Length and Laser Technology Lab National Institute of StandardsGizaEgypt

Frequency-modulated(FM)laser combs,which offer a quasi-continuous-wave output and a flat-topped optical spectrum,are emerging as a promising solution for wavelength-division multiplexing applications,precision metrology,and ultrafast optical *** generation of FM combs relies on spatial hole burning,group velocity dispersion,Kerr nonlinearity,and four-wave mixing(FWM).While FM combs have been widely observed in quantum cascade Fabry-Perot(FP)lasers,the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the *** we report a 60 GHz quantum-dot(QD)mode-locked laser in which both the amplitude-modulated(AM)and the FM comb can be generated *** high FWM efficiency of-5 dB allows the QD laser to generate FM comb *** also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD *** maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 *** study gives novel insights into the improvement of FM combs and paves the way for small-footprint,electrically pumped,and energy-efficient frequency combs for silicon photonic integrated circuits(PICs).

关键词： laser waveguide pumped

electrically pumped quantum-dot lasersgrownon 300 mm patterned Si photonic wafers

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Light(Science & Applications) 2022年第11期11卷 2698-2705页

作者： Chen Shang Kaiyin Feng eamonn THughes Andrew Clark Mukul Debnath Rosalyn Koscica Gerald Leake Joshua Herman David Harame Peter Ludewig Yating Wan john e.bowers Materials Department University of California Santa BarbaraSanta BarbaraCA 93106USA Department of electrical and Computer engineering University of California Santa BarbaraSanta BarbaraCA 93106USA OQe IncGreensboroNC 27409USA RF SUNY Polytechnic Institute AlbanyNY 12203USA NAsPIII/NV GmbH MarburgGermany

Monolithic integration of quantum dot(QD)gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light *** developments have demonstrated superior device reliability in blanket hetero-epitaxy ofⅡ-Ⅴdevices on Si at elevated ***,thick,defect management epi designs prevent vertical light coupling from the gain region to the Si-on-lnsulator ***,we demonstrate the frst electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned(001)Si wafer with a buttcoupled *** growth and fabrication challenges imposed by the template architecture have been resolved,contributing to continuous wave lasing to 60℃and a maximum double-side output power of 126.6 mW at 20℃with a double-side wall-plug efficiency of 8.6%.The potential for robust on-chip laser operation and effcient lowloss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.

关键词： pumped quantum coupling

Prospects and applications of on-chip lasers

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eLight 2023年第1期3卷 297-321页

作者： Zhican Zhou Xiangpeng Ou Yuetong Fang emad Alkhazraji Renjing Xu Yating Wan john e.bowers Integrated Photonics Lab King Abdullah University of Science and TechnologyThuwalMakkah ProvinceSaudi Arabia Function Hub The Hong Kong University of Science and Technology(Guangzhou)GuangdongChina Institute for energy efficiency University of CaliforniaSanta BarbaraSanta BarbaraCA 93106USA

Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable,power-efficient,and eco-friendly *** the heart of this platform is the light source,which in itself,has been the focus of research and development *** paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon *** tackle this from two perspectives:device-level and system-wide points of *** the former,the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration ***,the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits(PIC)with on-chip lasers and active devices,namely,optical communications and interconnects,optical phased array-based LiDAR,sensors for chemical and biological analysis,integrated quantum technologies,and finally,optical *** leveraging the myriad inherent attractive features of integrated silicon photonics,this paper aims to inspire further development in incorporating PICs with on-chip lasers in,but not limited to,these applications for substantial performance gains,green solutions,and mass production.

关键词： On-chip lasers Silicon photonics Photonic integration Communication LiDAR Optical computing

Integrated heterogeneous silicon/Ⅲ –Ⅴ mode-locked lasers

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Photonics Research 2018年第5期6卷 468-478页

作者： MICHAeL L.DAVeNPORT SONGTAO LIU john e.bowers Department of electrical and Computer engineering University of CafifomiaSanta BarbaraCalifomia 93106USA

The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems,wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low cost,high reliability, and low power consumption, thanks to semiconductor technology. Mode-locked lasers based on silicon photonics advance these qualities by the use of highly advanced silicon manufacturing technology. This paper will begin by giving an overview of mode-locked laser diode literature, and then focus on mode-locked lasers on silicon. The dependence of mode-locked laser performance on design details is presented.

关键词： Integrated heterogeneous silicon/Ⅲ-V mode-locked lasers

Silicon-integrated nonlinear Ⅲ-Ⅴ photonics

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Photonics Research 2022年第2期10卷 535-541页

作者： Weiqiang Xie Chao Xiang Lin Chang Warren Jin Jonathan Peters john e.bowers Department of electrical and Computer engineering University of CaliforniaSanta BarbaraSanta BarbaraCalifornia 93106USA Current address:Department of electronic engineering Shanghai Jiao Tong UniversityShanghai 200240China

Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator(SOI)waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear Ⅲ-Ⅴ(Al Ga As) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold(-25 mW) Kerr frequency comb generation in ultrahigh-QAlGaAs microrings(Q over 10^(6)) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by Ⅲ-Ⅴ and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines.

关键词： SOI AlGaAs waveguide

Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration

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Photonics Research 2019年第11期7卷 1222-1228页

作者： Jianan Duan Heming Huang Bozhang Dong Justin C.Norman Zeyu Zhang john e.bowers Frederic Grillot LTCI Telecom ParisInstitut Polytechnique de Paris46 rue Barrault75013 ParisFrance Materials Department University of CaliforniaSanta BarbaraCalifornia 93106USA Department of electrical and Computer engineering University of CaliforniaSanta BarbaraCalifornia 93106USA Institute for energy efficiency University of CaliforniaSanta BarbaraCalifornia 93106USA Center for High Technology Materials University of New MexicoAlbuquerqueNew Mexico 87106USA

This work investigates the dynamic and nonlinear properties of quantum dot(QD) lasers directly grown on silicon with a view to isolator-free applications. Among them, the chirp parameter, also named the αHfactor,is featured through a thermally insensitive method analyzing the residual side-mode dynamics under optical injection locking. The αHat threshold is found as low as 0.32. Then, the nonlinear gain is investigated from the gain compression factor viewpoint. The latter is found higher for epitaxial QD lasers on silicon than that in heterogeneously integrated quantum well(QW) devices on silicon. Despite that, the power dependence of the αHdoes not lead to a large increase of the chirp coefficient above the laser’s threshold at higher bias. This effect is confirmed from an analytical model and attributed to the strong lasing emission of the ground-state transition, which transforms into a critical feedback level as high as-6.5 d B, which is ~19 d B higher than a comparable QW ***, the intensity noise analysis confirms that QD lasers are overdamped oscillators with damping frequencies as large as 33 GHz. Altogether, these features contribute to fundamentally enhancing the reflection insensitivity of the epitaxial QD lasers. This last feature is unveiled by the 10 Gbit/s error-free high-speed transmission experiments. Overall, we believe that this work is of paramount importance for future isolator-free photonics technologies and cost-efficient high-speed transmission systems.

关键词： quantum nonlinear epitaxial

Quantum dot lasers for silicon photonics [Invited]

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Photonics Research 2015年第5期3卷 1-9页

作者： Alan Y.Liu Sudharsanan Srinivasan Justin Norman Arthur C.Gossard john e.bowers Materials Department University of California Santa Barbara Department of electrical and Computer engineering University of California Santa Barbara

We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance,reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects.

关键词： Ga As Quantum dot lasers for silicon photonics