Integrated heterogeneous silicon/Ⅲ –Ⅴ mode-locked lasers

作     者：MICHAEL L.DAVENPORT SONGTAO LIU JOHN E.BOWERS 

作者机构：Department of Electrical and Computer EngineeringUniversity of CafifomiaSanta BarbaraCalifomia 93106USA 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2018年第6卷第5期

页      面：468-478页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Defense Advanced Research Projects Agency(DARPA)EPHI and DODOS contracts 

主　　题：Integrated heterogeneous silicon/Ⅲ-V mode-locked lasers 

摘      要：The mode-locked laser diode has emerged as a promising candidate as a signal source for photonic radar systems,wireless data transmission, and frequency comb spectroscopy. They have the advantages of small size, low cost,high reliability, and low power consumption, thanks to semiconductor technology. Mode-locked lasers based on silicon photonics advance these qualities by the use of highly advanced silicon manufacturing technology. This paper will begin by giving an overview of mode-locked laser diode literature, and then focus on mode-locked lasers on silicon. The dependence of mode-locked laser performance on design details is presented.